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We introduce and demonstrate a new simulator that utilizes resist-specific chemical formulations to drive a Monte Carlo multi-physics and chemistry modeling flow for NA 0.33 and NA 0.55 EUV lithography. With this model stochastic variations are a natural consequence of the chemical and atomic composition of the material. Fully predictive EUV absorption coefficients and exposure latitudes have less than 5% error. LCDU values are predicted with errors smaller than 15% and LWR/LER values are predicted with errors smaller than 7%. We believe chemistry-focused simulations will be key to the development of new EUV photoresists tailored to high-NA imaging.
Patrick L. Theofanis andOleg Tazetdinov
"Monte Carlo EUV stochastic simulator (MESS): a chemistry-oriented lithography simulator", Proc. SPIE PC12051, Optical and EUV Nanolithography XXXV, PC120510I (13 June 2022); https://doi.org/10.1117/12.2617292
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Patrick L. Theofanis, Oleg Tazetdinov, "Monte Carlo EUV stochastic simulator (MESS): a chemistry-oriented lithography simulator," Proc. SPIE PC12051, Optical and EUV Nanolithography XXXV, PC120510I (13 June 2022); https://doi.org/10.1117/12.2617292