Top-down spectroscopic techniques for fast characterization of nanosheet and forksheet devices

Janusz Bogdanowicz

doi:10.1117/12.2626316

13 June 2022 Top-down spectroscopic techniques for fast characterization of nanosheet and forksheet devices

Janusz Bogdanowicz

Proceedings Volume PC12053, Metrology, Inspection, and Process Control XXXVI; PC120530G (2022) https://doi.org/10.1117/12.2626316
Event: SPIE Advanced Lithography + Patterning, 2022, San Jose, California, United States

Abstract

The transition from finFETs to nanosheet transistors is on. The industry is therefore looking into the options for a subsequent device, among which forksheet transistors appear as a serious contender [1]. Common to the processing of these Gate-All-Around architectures, the cavity etch, wherein SiGe is etched laterally from a SiGe/Si multilayer, remains a step of paramount importance [2]. Its development therefore requires new techniques for geometrical and material characterization. In this paper, we elaborate on the use of top-down spectroscopic techniques [3] to measure critical parameters such as cavity depth, stress and SiGe residues in nanosheet and forksheet transistors.

Conference Presentation

Citation Download Citation

Janusz Bogdanowicz "Top-down spectroscopic techniques for fast characterization of nanosheet and forksheet devices", Proc. SPIE PC12053, Metrology, Inspection, and Process Control XXXVI, PC120530G (13 June 2022); https://doi.org/10.1117/12.2626316

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