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We report on processing crystalline silicon with ultrashort laser pulses. Careful analysis of the nonlinear interaction process allows to inscribe waveguides in a longitudinal writing geometry. The origin of the waveguiding structures is due to a disturbed crystal structure with a cross section closely matching the focal size of the inscribing laser beam. Thermal annealing studies confirm that the strain from these defects and dislocations is responsible for the refractive index change. Improved control of nonlinear energy deposition paves the way to realize the transversal writing regime. Other applications like welding or localized amorphization will be highlighted as well.
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Stefan Nolte, Namig Alasgarzade, Alessandro Alberucci, Markus Blothe, Chandroth P. Jisha, Gabor Matthäus, Maxime Chambonneau, "Ultrashort pulse laser processing of silicon," Proc. SPIE PC12411, Frontiers in Ultrafast Optics: Biomedical, Scientific, and Industrial Applications XXIII, PC124110O (17 March 2023); https://doi.org/10.1117/12.2658867