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21 March 2023 Ion implantation of acceptors into gallium nitride
Kacper Sierakowski, Rafal Jakiela, Tomasz Sochacki, Malgorzata Iwinska, Piotr Jaroszynski, Michal Fijalkowski, Marcin Turek, Michal Bockowski
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Proceedings Volume PC12421, Gallium Nitride Materials and Devices XVIII; (2023) https://doi.org/10.1117/12.2648256
Event: SPIE OPTO, 2023, San Francisco, California, United States
Abstract
Three dopants (Be, Zn, Mg) were analysed in terms of diffusion through the crystal lattice of HVPE-GaN. Different crystallographic directions were investigated: [0001], [10-10] and [11-20]. Ion implantation was employed to create a thin layer of strongly doped GaN which acted as the diffusion source. Annealing in high nitrogen pressure was performed. Secondary ion mass spectrometry (SIMS) was used to measure the post-annealing depth profiles of implanted species. The measured profiles were used for calculation of diffusion coefficients and activation energies for all dopants and crystallographic directions. A strong dependence of diffusion on crystallographic orientation and impurities composition was observed.
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Kacper Sierakowski, Rafal Jakiela, Tomasz Sochacki, Malgorzata Iwinska, Piotr Jaroszynski, Michal Fijalkowski, Marcin Turek, and Michal Bockowski "Ion implantation of acceptors into gallium nitride", Proc. SPIE PC12421, Gallium Nitride Materials and Devices XVIII, (21 March 2023); https://doi.org/10.1117/12.2648256
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KEYWORDS
Gallium nitride
Crystals
Ion implantation
Diffusion
Annealing
Magnesium
Mass spectrometry
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