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16 March 2023 MOCVD growth of β-(AlGa)2O3 on β-Ga2O3 using N2O (Conference Presentation)
Fikadu Alema, William Brand, Takeki Itoh, Andrei Osinsky, James S Speck
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Proceedings Volume PC12422, Oxide-based Materials and Devices XIV; PC124220S (2023) https://doi.org/10.1117/12.2668702
Event: SPIE OPTO, 2023, San Francisco, California, United States
Abstract
MOCVD growth of high-quality β-(AlGa)2O3 on (010), (001), and (100) β-Ga2O3 substrates using nitrous oxide (N2O), TEGa, and TMAl as sources will be presented. Coherently strained β-(AlGa)2O3 layers with Al composition of ~40% and ~30% were realized on (100) and (010) substrates, which were coloaded during the growth. The films were smooth, but the layers grown on (100) substrates were smoother (~0.3 nm). The N2O can also dope the layers with nitrogen. β-(AlGa)2O3 films with [N] ranging from ~5x1017 to ~2×1019 cm-3 were achieved. The effects of substrate temperature and Al composition on N incorporation will be discussed.
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Fikadu Alema, William Brand, Takeki Itoh, Andrei Osinsky, and James S Speck "MOCVD growth of β-(AlGa)2O3 on β-Ga2O3 using N2O (Conference Presentation)", Proc. SPIE PC12422, Oxide-based Materials and Devices XIV, PC124220S (16 March 2023); https://doi.org/10.1117/12.2668702
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KEYWORDS
Metalorganic chemical vapor deposition
NOx
Aluminum
Conduction bands
Field effect transistors
Oxygen
Alloys
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