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17 March 2023 Long wavelength dilute nitride VCSELs, edge emitters and detectors for 3D sensing applications
Andrew D. Johnson, Kalyan Nunna, Andrew Clark, Andrew Joel, Rodney Pelzel
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Proceedings Volume PC12439, Vertical-Cavity Surface-Emitting Lasers XXVII; PC124390A (2023) https://doi.org/10.1117/12.2668691
Event: SPIE OPTO, 2023, San Francisco, California, United States
Abstract
Long Wavelength VCSELs and edge emitters have been grown by Molecular Beam Epitaxy (MBE) on GaAs substrates for applications in 3D sensing and LIDAR. Adding small amounts of nitrogen to the InGaAs QW material allows longer emission wavelengths to be achieved, but these alloys are notoriously difficult to achieve good optical material quality. Careful control of the layer structure and growth conditions of the dilute nitride active region has resulted in state of the art device characteristics at these wavelengths, which will be presented. Further optimization has been carried out to demonstrate appropriate device reliability under standard test conditions.
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Andrew D. Johnson, Kalyan Nunna, Andrew Clark, Andrew Joel, and Rodney Pelzel "Long wavelength dilute nitride VCSELs, edge emitters and detectors for 3D sensing applications", Proc. SPIE PC12439, Vertical-Cavity Surface-Emitting Lasers XXVII, PC124390A (17 March 2023); https://doi.org/10.1117/12.2668691
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KEYWORDS
Emission wavelengths
Vertical cavity surface emitting lasers
Three dimensional sensing
Alloys
Gallium arsenide
Nitrogen
Organic light emitting diodes
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