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17 March 2023 Vertical, Surface-emitting, Human-safe-wavelength semiconductor UV LEDs with AlGaN nanowires (Conference Presentation)
Songrui Zhao, Qihua Zhang, Xue Yin, Heemal Parimoo, Mohammad Vafadar
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Proceedings Volume PC12441, Light-Emitting Devices, Materials, and Applications XXVII; PC124410B (2023) https://doi.org/10.1117/12.2646618
Event: SPIE OPTO, 2023, San Francisco, California, United States
Abstract
In this talk, I will discuss using AlGaN nanowires for surface-emitting semiconductor deep UV LEDs at short wavelengths in vertical geometry. I will first show that by using high Al content AlGaN nanowires, devices emitting down to 207 nm can be obtained. The incorporation of polarization engineered layers further improves the device electrical performance significantly, whereas replacing conventional metal top electrode with graphene improves the device optical performance. I will also show in this talk that, by using nanowire template assisted AlN buffer layers, vertical semiconductor deep UV LEDs emitting down to 247 nm can be achieved.
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Songrui Zhao, Qihua Zhang, Xue Yin, Heemal Parimoo, and Mohammad Vafadar "Vertical, Surface-emitting, Human-safe-wavelength semiconductor UV LEDs with AlGaN nanowires (Conference Presentation)", Proc. SPIE PC12441, Light-Emitting Devices, Materials, and Applications XXVII, PC124410B (17 March 2023); https://doi.org/10.1117/12.2646618
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KEYWORDS
Nanowires
Light emitting diodes
Deep ultraviolet
Semiconductors
Aluminum nitride
Polarization
Metals
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