Plasma dynamics and future of LPP-EUV source for semiconductor manufacturing

Hakaru Mizoguchi; Toshihiro Oga

doi:10.1117/12.2658675

30 April 2023 Plasma dynamics and future of LPP-EUV source for semiconductor manufacturing

Hakaru Mizoguchi, Toshihiro Oga

Proceedings Volume PC12494, Optical and EUV Nanolithography XXXVI; PC124940D (2023) https://doi.org/10.1117/12.2658675
Event: SPIE Advanced Lithography + Patterning, 2023, San Jose, California, United States

Abstract

At present 250W power level is realized in semiconductor mass production factories1) by ASML. On the other hand, pioneer of this Unique technologies including; combination of pulsed CO2 laser and Sn droplets, dual wavelength pico second laser pulses for shooting and debris mitigation by magnetic field have been applied by Gigaphoton2). They have demonstrated high average power >300W EUV power with CO2 laser more than 27kW at output power in cooperation with Gigaphoton and Mitsubishi Electric3). In near future more higher power (>800W) EUV source is required to fit High NA (>0.55) lithography of semiconductor industry. In this paper we will discuss about the Sn plasma dynamics which dominate the EUV emission by using Tomson scattering (TS) measurement4）. Recent TS results have revealed whole profiles of electron temperature and ion density in the EUV sources. These results mention that there is still sufficient potential to increase EUV output in the future.

Conference Presentation

Citation Download Citation

Hakaru Mizoguchi and Toshihiro Oga "Plasma dynamics and future of LPP-EUV source for semiconductor manufacturing", Proc. SPIE PC12494, Optical and EUV Nanolithography XXXVI, PC124940D (30 April 2023); https://doi.org/10.1117/12.2658675

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