Presentation
4 October 2023 Trapped phonon-polariton modes induced by topological defects in mid-IR metasurfaces integrated with hexagonal boron nitride
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Abstract
We report novel phonon-polariton states induced by spatial defects in topological metasurface integrated with hexagonal boron nitride (hBN). The introduction of topological defects, created by stitching domains with different choices of unit cells leads to the emergence of spatially localized modes, while the coupling of these trapped modes with phonons in hBN gives rise to the formation of polaritonic states. We designed and fabricated a mid-IR-operating hybrid system that consists of a photonic metasurface with a thin layer of hBN on top of it. Topological defect modes of the fabricated structure were probed using direct imaging in both real- and Fourier-space.
Conference Presentation
© (2023) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Daria Smirnova, Filipp Komissarenko, Anton Vakulenko, Svetlana Kiriushechkina, Ekaterina Smolina, Sriram Guddala, Andrea Alù, and Alexander Khanikaev "Trapped phonon-polariton modes induced by topological defects in mid-IR metasurfaces integrated with hexagonal boron nitride", Proc. SPIE PC12646, Metamaterials, Metadevices, and Metasystems 2023, PC126460V (4 October 2023); https://doi.org/10.1117/12.2677517
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KEYWORDS
Boron nitride

Mid-IR

Light-matter interactions

Lithography

Numerical simulations

Optical components

Optical design

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