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Using nano-cathodoluminescence performed in scanning transmission electron microscope (STEM-CL), we have investigated a photonic-bandgap-crystal (PBC) laser structure at T = 17 K. In cross-sectional STEM images the full device structure is clearly resolved. The most dominant luminescence originates from the 3-fold MQW of the active region. The MQW shows a distinct peak wavelength change in growth direction indicating different structural and/or chemical properties of the individual quantum wells. In detail, a clear shift from 427 nm to 438 nm from the first to the top QW is observed, respectively.
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Frank Bertram, Gordon Schmidt, Christoph Berger, Peter Veit, Jürgen Bläsing, Armin Dadgar, André Strittmatter, Juergen Christen, "Advanced nano-characterization of an AlInN/GaN-based photonic bandgap crystal laser structure," Proc. SPIE PC12880, Physics and Simulation of Optoelectronic Devices XXXII, PC1288005 (12 March 2024); https://doi.org/10.1117/12.3000941