A 15-laboratory round-robin inter-comparison of ultrafast Terahertz and Microwave time-domain measurements will be presented. Detailed time-to-frequency domain spectral analyses to extract photo-generated carrier conductivity/mobility of high-mobility Perovskite film samples were examined. Experiments comparing non-contact Terahertz to Hall conductivity measurements conducted at NIST for bulk semiconductors (Float Zone Si, n/p-doped Si, GaAs, ZnTe, GaP, etc.) will be briefly shown. An overview of ultrafast terahertz studies of conducting polymers, 2D monolayer and exciton “multiplication” in multilayer transition metal dichalcogenide films (MoTe2, MoS2) will be given.
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