Novel plasma source for atomic scale etching

ChinWook Chung

doi:10.1117/12.3011277

10 April 2024 Novel plasma source for atomic scale etching

ChinWook Chung

Proceedings Volume PC12958, Advanced Etch Technology and Process Integration for Nanopatterning XIII; (2024) https://doi.org/10.1117/12.3011277
Event: SPIE Advanced Lithography + Patterning, 2024, San Jose, California, United States

Abstract

Semiconductor processing has been advancing from the nano to the atomic scale. For atomic-scale processing, the plasma source need to be precisely controlled to minimize damage, such as UV radiation damage, ion-induced damage, and charge accumulation damage. In this presentation, we will introduce an Ultra Low Electron Temperature (ULET) plasma (Te < 0.5 eV) as a novel plasma source enabling us to perform damage-free plasma processing. We will also explain how to produce the ULET plasma. It is demonstrated that charge accumulation even in a patten with high aspect ratio is almost eliminated, and graphene remains undamaged in the ULET plasma, while it is heavily damaged in conventional plasma processes. The ULET plasma shows great promise for applications in atomic-scale plasma processing.

Conference Presentation

Citation Download Citation

ChinWook Chung "Novel plasma source for atomic scale etching", Proc. SPIE PC12958, Advanced Etch Technology and Process Integration for Nanopatterning XIII, (10 April 2024); https://doi.org/10.1117/12.3011277

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