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10 April 2024 Role of surface reaction model in the next-generation plasma oxide etch process
Yeon Ho Im
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Proceedings Volume PC12958, Advanced Etch Technology and Process Integration for Nanopatterning XIII; (2024) https://doi.org/10.1117/12.3010678
Event: SPIE Advanced Lithography + Patterning, 2024, San Jose, California, United States
Abstract
We present a universal surface kinetic model developed with a self-consistent numerical algorithm under a wide range of oxide etching process conditions. The deposition or etch yield can be calculated by considering both the passivation layer and mixed layers simultaneously. The proposed model was verified with experimental and atomic scale simulations. Finally, we integrated this model with 3D feature profile simulation to investigate the emerging issues in the plasma oxide process, such as low temperature and surface charging. The valuable knowledge from our integrated simulation will be discussed for the next-generation plasma oxide etch process.
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Yeon Ho Im "Role of surface reaction model in the next-generation plasma oxide etch process", Proc. SPIE PC12958, Advanced Etch Technology and Process Integration for Nanopatterning XIII, (10 April 2024); https://doi.org/10.1117/12.3010678
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KEYWORDS
Plasma etching
Etching
Plasma
Oxides
3D modeling
Simulations
Algorithm development
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