Integrated quantum photonics is crucial for the efficient generation, manipulation, and detection of quantum light states, enabling a high density of on-chip photonic qubits and functionalities essential for quantum information processing. Among materials for quantum photonics, silicon nitride emerges as a leading platform due to its unique properties and compatibility with existing foundry fabrication processes. Our research has led to the discovery of intrinsic quantum emitters in low-autofluorescence SiN and the development of techniques for their creation. These emitters are characterized by high single-photon purity and brightness at room temperature. Moreover, we have investigated the operation of these emitters at cryogenic temperatures, addressing the generation of indistinguishable photons. We have achieved successful integration of these emitters with SiN waveguides and established a method for large-scale, site-controlled fabrication. This talk delves into our research effort to engineer novel quantum emitters in SiN, integrate them with on-chip photonic structures, and explore their photophysical properties and potential avenues for their improvement and applications.
|