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10 April 2015 Metrology for block copolymer directed self-assembly structures using Mueller matrix-based scatterometry
Dhairya J. Dixit, Vimal Kamineni, Richard Farrell, Erik R. Hosler, Moshe Preil, Joseph Race, Brennan Peterson, Alain C. Diebold
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Journal of Micro/Nanolithography, MEMS, and MOEMS, Vol. 14, Issue 2, 021102 (April 2015). https://doi.org/10.1117/1.JMM.14.2.021102
Abstract
Patterning based on directed self-assembly (DSA) of block copolymer (BCP) has been demonstrated to be a cost-effective manufacturing technique for advanced sub-20-nm structures. This paper describes the application of Mueller matrix spectroscopic ellipsometry (MMSE) based scatterometry to optically characterize polystyrene-b-polymethylmethacrylate patterns and Si fins fabricated with DSA. A regression-based (inverse-problem) approach is used to calculate the line-width, line-shape, sidewall-angle, and thickness of the DSA structures. In addition, anisotropy and depolarization calculations are used to determine the sensitivity of MMSE to DSA pattern defectivity. As pattern order decreases, the mean squared error value increases, depolarization value increases, and anisotropy value decreases. These specific trends are used in the current work as a method to judge the degree of alignment of the DSA patterns across the wafer.
CC BY: © The Authors. Published by SPIE under a Creative Commons Attribution 4.0 Unported License. Distribution or reproduction of this work in whole or in part requires full attribution of the original publication, including its DOI.
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Dhairya J. Dixit, Vimal Kamineni, Richard Farrell, Erik R. Hosler, Moshe Preil, Joseph Race, Brennan Peterson, and Alain C. Diebold "Metrology for block copolymer directed self-assembly structures using Mueller matrix-based scatterometry," Journal of Micro/Nanolithography, MEMS, and MOEMS 14(2), 021102 (10 April 2015). https://doi.org/10.1117/1.JMM.14.2.021102
Published: 10 April 2015
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Cited by 17 scholarly publications.
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KEYWORDS
Directed self assembly
Picosecond phenomena
Silicon
Scatterometry
Anisotropy
Semiconducting wafers
Data modeling
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