Fabrication of a novel vacuum microelectronic pressure sensor

Zhi-yu Wen; Zhongquan Wen; Gang Chen; Xiaolan Wang

doi:10.1117/1.1792651

1 October 2004 Fabrication of a novel vacuum microelectronic pressure sensor

Zhi-yu Wen, Zhongquan Wen, Gang Chen, Xiaolan Wang

Author Affiliations +

Journal of Micro/Nanolithography, MEMS, and MOEMS, Vol. 3, Issue 4, (October 2004). https://doi.org/10.1117/1.1792651

Abstract

By combining silicon dry corrosion, wet corrosion, oxidizing sharpening and vacuum bonding techniques, and the theoretic calculation of elastic membranes and the distance from the catelectrode to the anode, a novel vacuum microelectronic pressure senor with overload protection is developed. The density of the field emission catelectrode array is about 24,000/mm². The starting emission voltage is 0.5 to 1.5 V; backward voltage is higher than 25 V. When the forward voltage is 5 V, pressure sensitivity is 30.1 mV/kPa. The temperature error is 0.5% between 20 and 122°C.

©(2004) Society of Photo-Optical Instrumentation Engineers (SPIE)

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Zhi-yu Wen, Zhongquan Wen, Gang Chen, and Xiaolan Wang "Fabrication of a novel vacuum microelectronic pressure sensor," Journal of Micro/Nanolithography, MEMS, and MOEMS 3(4), (1 October 2004). https://doi.org/10.1117/1.1792651

Published: 1 October 2004

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