1 October 2008 Extraction of Young's modulus and residual stress of structural materials through measurement of pull-in voltage and off-capacitance of beams
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Abstract
The mechanical properties of the structural layer play an important role in the design and optimization of microelectromechanical system structures. The pull-in measurement is a popular technique used to measure the mechanical properties of a material, but its success depends on the accurate measurement of the gap (g) between the beam and the ground plane and its uniformity. We propose a novel technique that does not require accurate knowledge of the value of g. In our proposed method, a large number of beams with different lengths (L) are to be fabricated simultaneously and the off-capacitance (Coff) in addition to pull-in voltage (Vpi) measured in the same setup. To get accurate results, the range of length of beams must be properly chosen. We show, with the help of simulations, that by using our method the material properties can be extracted very accurately even when the gap (g) is nonuniform.
©(2008) Society of Photo-Optical Instrumentation Engineers (SPIE)
Jaibir Sharma "Extraction of Young's modulus and residual stress of structural materials through measurement of pull-in voltage and off-capacitance of beams," Journal of Micro/Nanolithography, MEMS, and MOEMS 7(4), 043020 (1 October 2008). https://doi.org/10.1117/1.2990734
Published: 1 October 2008
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CITATIONS
Cited by 1 scholarly publication.
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KEYWORDS
Microelectromechanical systems

Gold

Capacitance

Optical simulations

Silicon

Computer simulations

Etching

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