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1 July 2009 Impact of mask three-dimensional effects on resist-model calibration
Peter De Bisschop, Thomas Muelders, Ulrich K. Klostermann, Thomas Schmoeller, John J. Biafore, Stewart A. Robertson, Mark D. Smith
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Journal of Micro/Nanolithography, MEMS, and MOEMS, Vol. 8, Issue 3, 030501 (July 2009). https://doi.org/10.1117/1.3158356
Abstract
We report on a comparison between a full-physical resist model that was calibrated to experimental line/space (L/S) critical dimension (CD) data under the flat-mask (also called "thin-mask" or "Kirchhoff") approximation with the model obtained when using a mask 3-D calculation engine (i.e., one that takes into account the mask-topography effects). Both models were tested by evaluating their prediction of the CDs of a large group of 1-D and 2-D structures. We found a clear correlation between the measured-predicted CD difference and the magnitude of the mask 3-D CD effect, and show that the resist model calibrated with a mask 3-D calculation engine clearly offers a better CD predictability for certain types of structures.
©(2009) Society of Photo-Optical Instrumentation Engineers (SPIE)
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Peter De Bisschop, Thomas Muelders, Ulrich K. Klostermann, Thomas Schmoeller, John J. Biafore, Stewart A. Robertson, and Mark D. Smith "Impact of mask three-dimensional effects on resist-model calibration," Journal of Micro/Nanolithography, MEMS, and MOEMS 8(3), 030501 (1 July 2009). https://doi.org/10.1117/1.3158356
Published: 1 July 2009
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Cited by 3 scholarly publications.
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KEYWORDS
3D modeling
Critical dimension metrology
Data modeling
Photomasks
Calibration
Cadmium
Optical proximity correction
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