EUV photolithography: resist progress in metal–organic complex photoresists

Hong Xu; Vasiliki Kosma; Kazunori Sakai; Emmanuel P. Giannelis; Christopher K. Ober

doi:10.1117/1.JMM.18.1.011007

8 December 2018 EUV photolithography: resist progress in metal–organic complex photoresists

Hong Xu, Vasiliki Kosma, Kazunori Sakai, Emmanuel P. Giannelis, Christopher K. Ober

Journal of Micro/Nanolithography, MEMS, and MOEMS, Vol. 18, Issue 1, 011007 (December 2018). https://doi.org/10.1117/1.JMM.18.1.011007

Abstract

With the rapid development of semiconductors, today’s optical lithography is approaching its physical limits, and thus alternative patterning technology is urgently needed. Extreme ultraviolet (EUV) lithography, using a wavelength of 13.5 nm, is considered one of the most prominent candidates for next-generation lithography. The main challenge for EUV resists is to simultaneously satisfy resolution, line-width roughness, and sensitivity requirements following the ITRS roadmap. Though polymer-based chemically amplified resist is the current standard photoresist, entirely new resist platforms are required due to the performance targets of future process nodes. Our recent progress in metal oxide nanoparticle photoresist research will be discussed with a focus on zirconium and hafnium oxides. A brief discussion of a number of important structural and material properties pertaining to key characteristics affecting resist performance is also included.

Citation Download Citation

Hong Xu, Vasiliki Kosma, Kazunori Sakai, Emmanuel P. Giannelis, and Christopher K. Ober "EUV photolithography: resist progress in metal–organic complex photoresists," Journal of Micro/Nanolithography, MEMS, and MOEMS 18(1), 011007 (8 December 2018). https://doi.org/10.1117/1.JMM.18.1.011007

Received: 26 May 2018; Accepted: 13 November 2018; Published: 8 December 2018

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