Sampling plan optimization for critical dimension metrology

Masafumi Asano; Takahiro Ikeda

doi:10.1117/1.2242815

1 July 2006 Sampling plan optimization for critical dimension metrology

Masafumi Asano, Takahiro Ikeda

Journal of Micro/Nanolithography, MEMS, and MOEMS, Vol. 5, Issue 3, 033008 (July 2006). https://doi.org/10.1117/1.2242815

Abstract

To enhance the quality of Advanced Process Control (APC), the optimization of the sampling plan in critical dimension (CD) metrology is studied through empirical considerations concerning the characteristics of errors and a statistical approach. The metric of the optimization is the accuracy of lot mean estimation. Critical dimension errors are classified into static and dynamic errors. A static error is defined as an error that repeats through lots while keeping its tendency, and a dynamic error as an error whose tendency changes by lot. In the basic concept of our sampling plan, sampling positions and size are determined from the static error and dynamic error, respectively. The balance of the sampling number of the wafer, field, and site under the restriction of total sampling size is optimized by a statistical theory.

©(2006) Society of Photo-Optical Instrumentation Engineers (SPIE)

Citation Download Citation

Masafumi Asano and Takahiro Ikeda "Sampling plan optimization for critical dimension metrology," Journal of Micro/Nanolithography, MEMS, and MOEMS 5(3), 033008 (1 July 2006). https://doi.org/10.1117/1.2242815

Published: 1 July 2006

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