Schottky diode based on polyaniline-poly (methyl methacrylate) system

Tharwat G. Abdel-Malik; Hussen A. Motaweh; Mohamed O. Abdel-Hamed

doi:10.1117/1.3560242

1 January 2011 Schottky diode based on polyaniline-poly (methyl methacrylate) system

Tharwat G. Abdel-Malik, Hussen A. Motaweh, Mohamed O. Abdel-Hamed

Author Affiliations +

Journal of Photonics for Energy, Vol. 1, Issue 1, 011116 (January 2011). https://doi.org/10.1117/1.3560242

Abstract

Polyaniline-(PANI)-poly (methyl methacrylate) (PMMA) blend was used to fabricate the Schottky device: Al/ PANI-PMMA /Au. Current density-voltage (J-V) capacitance-voltage (C-V), and complex impedance measurements were used to evaluate the junction parameters of the devices. The photovoltaic parameters of the cells are estimated from the analysis of the current-voltage characteristics under illumination.

Citation Download Citation

Tharwat G. Abdel-Malik, Hussen A. Motaweh, and Mohamed O. Abdel-Hamed "Schottky diode based on polyaniline-poly (methyl methacrylate) system," Journal of Photonics for Energy 1(1), 011116 (1 January 2011). https://doi.org/10.1117/1.3560242

Published: 1 January 2011

ACCESS THE FULL ARTICLE

JOURNAL ARTICLE
8 PAGES

DOWNLOAD PAPER SAVE TO MY LIBRARY