Liquid phase epitaxial growth from Te-rich solutions and junction formation in Hg1-xCdxTe (x=0.22)

A. K. Sridhar; S. C. Gupta

doi:10.1117/12.61288

1 April 1993 Liquid phase epitaxial growth from Te-rich solutions and junction formation in Hg_1-xCd_xTe (x=0.22)

A. K. Sridhar, S. C. Gupta

Author Affiliations +

Optical Engineering, Vol. 32, Issue 4, (April 1993). https://doi.org/10.1117/12.61288

Abstract

Growth of Hg_1-xCd_xTe mercury cadmium telluride (MCT), by liquid phase epitaxy (LPE) is the most important technology for the fabrication of IR detectors for imaging. We present in detail the LPE growth of MCT from Te-rich solutions using a dipping technique. The physical parameters such as surface morphology, composition, thickness, and the electrical properties of the undoped epilayers are given. Effects of substrate rotation on surface morphology have been studied. The conditions for obtaining good uniform epilayers in 8 to 14 μm are discussed. The LPE layers have been annealed in the Hg atmosphere. The results of Hg diffusion into the p-type layer as a function of annealing temperature are also discussed.

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A. K. Sridhar and S. C. Gupta "Liquid phase epitaxial growth from Te-rich solutions and junction formation in Hg_1-xCd_xTe (x=0.22)," Optical Engineering 32(4), (1 April 1993). https://doi.org/10.1117/12.61288

Published: 1 April 1993

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