Variations in optical and electrical properties have been investigated by isoelectronic substitution of Te at the cost of Se in the Ge20Sn10Se70 − xTex (x = 3, 6, 9, 12, and 15) system. The current study reports linear (i.e., μ, k, Eg) as well as nonlinear (i.e., μ2 and χ3) optical transmission coefficients of as-prepared specimens. An overall increase in nonlinear parameters χ3 and μ2 can be observed with an increase in the Te concentration. High nonlinearity makes these glasses a prominent candidate for optical device applications. Further attempt has been made to observe the variations in conductivity with respect to temperature for amorphous Ge20Sn10Se70 − xTex (x = 3, 6, 9, 12, 15) thin films using a two-probe method and hence the band structure and corresponding conduction mechanism have been investigated.
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