As the patterning resolution of semiconductor manufacturing increases, so does the need to remove critical defects from the photochemical supply chain. In particular, metallic contaminants have been known to lead to various types of defects such as cone defects that contribute to significant yield loss 1. Hence, control of metallic contaminants is critical for these next generation lithography processes. Previous work has introduced the Purasol™ LS2 solvent purifier, capable of superior metal reduction in a wide range of photochemical solvents 2. Current work focuses on purification of polymer solutions, a key intermediate material in the photochemical ecosystem. We present data detailing the ability of the LS2 purifier to remove metals from a poly-(4-hydroxystyrene) (PHS) polymer solution. Purifier membrane in coupons as well as an LS2 purifier device are used in a series of experiments to investigate the metal removal efficiency in the polymer solution as a function of various experimental parameters. Metal removal is quantified using ICP-MS (inductively coupled plasma mass spectroscopy) measurements. In addition, we also present customer data demonstrating the effectiveness of the LS2 in purifying polymer solutions to reduce defects that degrade yield performance.
Removing metallic contaminants from the photochemical supply chain is critical for the creation of high yielding, highly reliable semiconductors. Metallic contaminants may lead to various types of defects, such as cone defects, that can result in significant yield loss and degraded long-term reliability. This makes control of metallic contaminants even more critical in advanced photolithography processes, where the device reliability demands metal contaminants at parts per trillion (ppt) levels. Previous work3 demonstrated the ability of two purifiers, PurasolTM SP and SN, to reduce the metal contaminants in a variety of organic solvents. In this paper we will discuss our continued work to reduce contamination sources that can contribute to defect formation in photolithography applications.
While great advances have been made to move extreme ultraviolet (EUV) lithography toward manufacturing readiness, a difficult challenge remains. Although standard chemically amplified resists (CAR) can be exposed with EUV, these materials struggle to achieve resolution targets and are not nearly as sensitive as those created for ArF exposure. Non-CAR resists, such as metal-oxide resists, offer an alternative that achieve both EUV resolution and sensitivity targets. However, the inclusion of metal oxides poses a challenge to traditional filtration designed to remove unwanted dissolved contaminants from the fluid stream. Ultrahigh molecular weight polyethylene (UPE) filters have been used for metal oxide EUV resist filtration because of high retention efficiency and excellent photochemical compatibility. This paper describes our joint effort to improve Inpria metal oxide EUV resist defectivity usingfiltration optimization. A study comparing various Point-of-Use (POU) filters was conducted to identify filtration solutions that reduce defects in Inpria metal-oxide EUV resist coatings. Several filters utilizing a variety of retention ratings and membrane designs were installed on a TEL Clean TrackTM ActTM 12. A metal oxide EUV resist was filtered and coated on wafers that were subsequently analyzed for total wet particle counts. This study presents the efficacy of optimized filtration design to reduce defects in metal oxide EUV resists and provides a recommendation to achieve low wafer coating defects.
Extreme ultraviolet (EUV) lithography has gained momentum towards high-volume manufacturing (HVM) as the method of choice for sub-20 nm half-pitch device fabrication. Optimized EUV photoresists and an improved understanding of the EUV patterning mechanisms have made significant progress toward achieving improved resolution, line-width roughness (LWR), and sensitivity. In addition, introducing a thin EUV underlayer (UL) into the regular EUV materials stack enhances the overall performance of EUV resists and opens the process window. As with all other spin-on photochemicals, utilizing filtration at the point-of-dispense can effectively reduce coating defects of the EUV underlayer material.
In this paper, we will describe our efforts to leverage different filtration parameters, including retention ratings and membrane materials, to understand their impact on EUV underlayer coating defects, and will present the characterization of coating defects in very thin films.
There are many points in the photochemical ecosystem where variability can be addressed with chemistry and hardware solutions. From the purification of resist components to the final post develop rinse, there are many points at which defects can be created or eliminated. As the possible combinations of chemistries increase to achieve ever-shrinking nodes, the portfolio of photochemical filtration to reduce defects, variability, and downtime must also grow.
Suppliers to OEMs (original equipment manufacturers) and photochemical manufacturers are constantly innovating to ensure their solutions address new defect challenges. In the 1980s, when the minimum feature size was approaching 1.0 μm, 0.2 μm filters were used to eliminate the largest particles in photochemical manufacturing. As the industry pursues the sub-7 nm node, conventional filtration technology is challenged to meet industry needs. Membrane pore size reduction alone is no longer a tenable approach to meet evolving process requirements, and creative approaches to eliminate defects must be developed to meet these challenges.
This overview will provide process engineers insight into the complexity of filtration to reduce defect variability and downtime. The many factors that impact filtration efficacy will be reviewed, including complete filter design, material selection, membrane morphology, wettability, and fluid dynamics. New technological approaches under consideration will be discussed. Data will be presented to demonstrate promise of these new approaches and where they could lead us in the future.
Nanoscale patterning defects continue to challenge yield performance of photolithographic processes. It is well known that applying point-of-use (POU) filtration to patterning chemistries is effective for defect reduction. While POU filtration can remove contaminants from process chemistries, the filter materials of construction could adversely interact with the chemistry, resulting in a long filter flushing time or poor lithographic performance. Historically, the most common materials used to manufacture filters for POU photochemical filtration are ultrahigh molecular weight polyethylene (UPE) and Nylon. UPE membranes have outstanding chemical compatibility and enable sub-5 nm filtration, but can struggle to quickly reach baseline defectivity when trying to remove air from the smallest available pores. Nylon membranes provide additional non-sieving retention capabilities that can be instrumental in reducing wafer level defects without further reducing membrane pore size, but are not compatible with acidic chemistries.
To address the demand for new chemistry compatibility, reduced defectivity and increased productivity, Entegris has tailored a membrane as part of its OktolexTM family of technologies to address demanding lithography defectivity performance targets. The new membrane is cleaner, more retentive, and has an enhanced non-sieving particle capture capability when compared to a standard Nylon membranes. In an evaluation of the newly developed membrane using 45nm line/space patterning, the new membrane significantly outperformed both UPE and Nylon filters in microbridging defectivity. In addition, the new membrane also achieved baseline significantly faster than the other filters.
Advanced lithography techniques relying on innovations in scanner, track, and material technologies have been a consistent driver of Moore’s Law. As these innovations transition from laboratories to factories, all members of the lithography value chain must adapt. Filtration technology has relied upon a subset of carefully matched materials to filter lithographic materials. The introduction of new materials for emerging lithography techniques creates the opportunity to seek alternatives to ultra-high molecular weight polyethylene (UPE), Nylon, and polypropylene.
Fluoropolymers, such as polytetrafluoroethylene (PTFE) and perfluoroalkoxy alkane (PFA), have been used widely in the fab to filter chemistries that require instant surface wettability and high flow rates. These requirements now align more closely with today’s leading-edge lithography materials. After a review of the motivation behind choosing new filtration materials in the lithography sector, this paper will identify the critical material attributes, specific design considerations, and the importance of membrane surface technologies, beginning in the photoresist manufacturing process. Data presented will include laboratory studies of fluoropolymer membranes in common solvents, on-wafer defect data, and bulk filtration manufacturing data, all showing the match between fluoropolymer filters and photolithography materials.
Defect source reduction in leading-edge iArF resists is a critical requirement to improve device performance and overall yield in lithography manufacturing processes. It is believed that some polar polymers can aggregate and be responsible for single or multiple micro-bridge defects. Further investigation into the formation of these defects is needed. We have previously presented the effective removal of gel-like polymers using nylon media [1]. However, as the industry is moving to smaller feature sizes, there is a need to further improve the defect removal efficiency. In this paper, a filter, comprised of a novel membrane called Azora with unique morphology and high flow performance is introduced. This new filter shows better on-wafer in an advanced ArF solution than conventional Nylon and UPE media. In addition, it shows improved stability during chemical storage. Results and possible retention mechanisms are discussed.
Metal ions in photoresists and solvents pose an ever greater contamination problem in photolithography’s advanced applications. The reduction of metal contaminants is critical in the entire photochemical supply chain. In this paper we demonstrate that two novel membrane purifiers dramatically reduced the metal contents in a range of organic solvents. These solvents are used for photoresist manufacturing and for wafer surface and dispense line rinse in track tools. The impact of flow rate and metal concentrations in the feed on the metal removal efficiency of the purifiers is presented. Furthermore, a study to determine the dominant mechanism of metal reduction in solvents is proposed.
KEYWORDS: Lithography, Photoresist materials, Immersion lithography, Semiconducting wafers, Line width roughness, Line edge roughness, Scanning electron microscopy, Particles, Bridges, Finite element methods, Fermium, Frequency modulation
Specific “killer-defects”, such as micro-line-bridges are one of the key challenges in photolithography’s advanced applications, such as multi-pattern. These defects generate from several sources and are very difficult to eliminate. Pointof-use filtration (POU) plays a crucial role on the mitigation, or elimination, of such defects. Previous studies have demonstrated how the contribution of POU filtration could not be studied independently from photoresists design and track hardware settings. Specifically, we investigated how an effective combination of optimized photoresist, filtration rate, filtration pressure, membrane and device cleaning, and single and multilayer filter membranes at optimized pore size could modulate the occurrence of such defects [1, 2, 3 and 4]. However, the ultimate desired behavior for POU filtration is the selective retention of defect precursor molecules contained in commercially available photoresist. This optimal behavior can be achieved via customized membrane functionalization. Membrane functionalization provides additional non-sieving interactions which combined with efficient size exclusion can selectively capture certain defect precursors. The goal of this study is to provide a comprehensive assessment of membrane functionalization applied on an asymmetric ultra-high molecular weight polyethylene (UPE) membrane at different pore size. Defectivity transferred in a 45 nm line 55 nm space (45L/55S) pattern, created through 193 nm immersion (193i) lithography with a positive tone chemically amplified resist (PT-CAR), has been evaluated on organic under-layer coated wafers. Lithography performance, such as critical dimensions (CD), line width roughness (LWR) and focus energy matrix (FEM) is also assessed.
Negative tone development (NTD) has dramatically gained popularity in 193 nm dry and immersion lithography, due to their superior imaging performance [1, 2 and 3].
Popular negative tone developers are organic solvents such as n- butyl acetate (n-BA), aliphatic ketones, or high-density alcohols such as Methyl Isobutyl Carbinol (MIBC). In this work, a comparative study between ultra-high molecular weight polyethylene (UPE) and polytetrafluoroethylene (PTFE) POU filtration for n-BA based NTD has been carried out.
Results correlate with the occurrence or the mitigation of micro bridges in a 45 nm dense line pattern created through immersion lithography as a function of POU membrane.
In today's competitive lithography market, resist manufacturers are always striving to create a product to meet
lithographic challenges while maintaining a low inherent defect level. While bulk filtration used in resist manufacturing
removes a majority of the inherent defectivity, point-of-use filtration is still required to ensure that defects are not passed
from the bottle to the wafer. As Moore's law drives lithographers to ever decreasing dimensions, resist manufacturers
must find new ways of filtering their chemistries to make sure that the smallest defects cannot create the biggest yield
detractors. In addition, IDMs must use new innovations to explore point-of-use filtration techniques to protect their
valuable patterns.
This paper will show the conditions that can reduce defectivity in an immersion lithography scheme. More specifically,
advanced point-of-use filtration techniques, including revolutionary filter membrane technology and advanced filtration
settings, will be explored to understand potential 22nm node defect performance. By thinking ahead about the filtration
needs of the future, resist manufacturers, IDMs, and equipment manufacturers can all work toward an understanding of the complex nature of filtration, ultimately yielding a new, low defectivity regime at the smallest pattern sizes.
Minimizing defects in spin-on lithography coatings requires a careful understanding of the interactions between the spin-on
coating material and the filtration and dispense system used on the coating track. A wet-developable bottom anti-reflective
coating (BARC) was examined for its interaction with polyamide and UPE media when utilizing the Entegris IntelliGen Mini dispense system. In addition, a new method of priming the filter and pump is described which improves
the wetting of the filter media, preventing bubbles and other defect-generating air pockets within the system. The goal is
to establish plumb-on procedures that are material and hardware specific to avoid any defect problems in the coating
process, as well as to gain a better understanding of the chemical and physical interactions that lead to coating defects.
Liquid particle counts from a laboratory-based filtration stand are compared with on-wafer defects from a commercial
coating track to establish a correlation and allow better prediction of product performance. This comparison in turn will
provide valuable insight to the engineering process of product filtration and bottling at the source.
Bottom Anti-Reflective Coatings (BARCs) have been widely used in the lithography process for decades. BARCs play
important roles in controlling reflections and therefore improving swing ratios, CD variations, reflective notching, and
standing waves. The implementation of BARC processes in 193nm dry and immersion lithography has been
accompanied by defect reduction challenges on fine patterns. Point-of-Use filters are well known among the most
critical components on a track tool ensuring low wafer defects by providing particle-free coatings on wafers. The filters
must have very good particle retention to remove defect-causing particulate and gels while not altering the delicate
chemical formulation of photochemical materials.
This paper describes a comparative study of the efficiency and performance of various Point-of-Use filters in reducing
defects observed in BARC materials. Multiple filter types with a variety of pore sizes, membrane materials, and filter
designs were installed on an Entegris Intelligent(R) Mini dispense pump which is integrated in the coating module of a
clean track. An AZ(R) 193nm organic BARC material was spin-coated on wafers through various filter media.
Lithographic performance of filtered BARCs was examined and wafer defect analysis was performed. By this study, the
effect of filter properties on BARC process related defects can be learned and optimum filter media and design can be
selected for BARC material to yield the lowest defects on a coated wafer.
In semiconductor manufacturing processes, bubbles (often referred as microbubbles) can be contaminants that reduce manufacturing yield. In photolithography processes, a Point-of-Use filter is used on a clean track system to ensure lower wafer defect level by providing particle and bubble free photochemicals. However, filter changeout often results in significant chemical consumption and tool downtime due to purging of air from the system. This paper describes a technique developed to rapidly eliminate microbubbles during filter startup in a two stage dispense system. The experimental results suggest that by providing a constant pressure to the fluid after wetting the filter, we were able to effectively eliminate microbubbles in the fluid. Therefore, the filter startup process was significantly improved.
In its relatively short history of use, the formulation complexity of bottom anti-reflective coatings (BARC) for semiconductor fabrication has become an enabling technology for nanoscale chip geometries. As lithography advancements are mastered, process material and equipment capabilities must follow. Typical photochemical solutions contain a variety of additives, often in trace amounts. The slightest unintended alteration of the photochemical formulation's chemical composition could have a detrimental effect on lithography process yield. The added complexity of BARC formulations leads suppliers of liquid microcontamination control technologies to develop filtration solutions that effectively remove the destructive particles and gels from BARC while maintaining the formulation's integrity during the filtration process.
In a joint study, Entegris and Brewer Science discovered that nylon has proven to be less chemically resistant to attack by certain BARC materials than next-generation ultrahigh molecular weight polyethylene (UPE) membrane materials. Essentially, UPE membrane-based filters remove the damaging particulate and gels without altering the delicate chemical formulation of BARC materials. It has also been experimentally proven that the UPE-based membrane maintains its material integrity during the filters' lifetime. This provides new opportunities for fabs and photochemical suppliers to enhance the performance, repeatability and reliability of semiconductor lithography processes.
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