As the technology node gets smaller and smaller, the benefit from Sub-Resolution Assist Features (SRAF) becomes significant in EUV lithography which makes SRAFs a must-have tool for next generation beyond 7nm technology. When considering EUV specific effects, the metrics that need to be accounted for include Image Log-Slope (ILS), Process Variability (PV Band), common Depth of Focus (cDOF), and Image Shift (ImS) through focus. When these critical factors are accounted for during the EUV mask generation the optimization become much more complicated and challenging and necessitates the need for SRAFs beyond 7nm. SRAF helps enhance not only the PV Band, but more importantly helps boost the ILS, which is one of the key factors for improving stochastic effect in EUV. However, ILS is just one of the important image quality metric that we should focus on. For metal layers, Image Shift is another key factor which can have a big impact on overlay. ImS at the nominal condition could be compensated by Optical Proximity Correction (OPC), but image shift through focus can hardly be tuned by the main feature correction. The image shift through focus can be mitigated by SRAF insertion. Strong 3D mask effects can cause best focuses of different patterns to be far apart in EUV, which can cause an unusable cDOF even when the individual depth of focus values of all the patterns are not bad. SRAFs can be inserted to improve the individual depth of focus and align the best focuses together to help enhance the common process window. When taking account of various different EUV specific metrics mentioned above, then the most critical question for the next generation beyond 7nm is “How to define the cost function for mask optimization with SRAFs?” (Figure 1, EUV mask optimization flow for next generation beyond 7nm). In this study the image quality metrics including ILS, PVBand, cDOF, and ImS are evaluated. For each optimization schema using different cost functions, we examine the cost function metric and its impact on the other image quality metrics. We also present the potential trade-offs together with the analysis. Furthermore, multiple cross cost functions are defined for SRAF optimization and the results are analyzed accordingly. Both contact and metal layer patterns representing next generation beyond 7nm design rules are investigated. In our testing, symmetric standard sources from ASML NXE3400 is examined and the results are compared and analyzed.
As the EUV lithography is extending beyond 7nm technology, design to mask strategy becomes more complex. New challenges including advanced OPC and ILT in mask optimization, curvilinear masks, shrinking Mask Rule Checking (MRC), Sub-Resolution Assist Features (SRAF) generation and formation, and other complex mask geometries drive the needs to study this synergy from different stages of the flow from Optical Proximity Correction (OPC), Mask Process Correction (MPC), fracturing, to mask writing and inspection. In this study, different OPC and SRAF mask formations including curvilinear masks, controlled Manhattanized approximations of curvilinear masks, and conventional masks are generated. We illustrate whether curvilinear masks have any demonstrable lithographic benefits. A quantitative comparison of how the Manhattanization impacts mask formation. The image quality metrics such as Image Log Slope (ILS), Process Viability (PV) Band, and Depth of Focus (DOF) from various OPC mask flavors including different MRC settings and different mask forms are compared and discussed. The mask manufacturability study is conducted to identify any major challenges and approaches to minimize, including assessing the value and need for native curvilinear write tool support on a MultiBeam Mask Writer (MBMW) or a single beam Vector Shaped Beam (VSB) mask writer.
Finding the true on-product hot spots (patterning defects) by High Volume Manufacturing (HVM) inspection tools is increasingly challenging as the process window margin shrinks. It is a common practice nowadays to use Optical Rule Check (ORC) results by computation lithography to provide “care areas” to increase the signal to noise level of the inspection tool, thus improving the detection accuracy. The care area defined by the traditional method of contour-based process window checks may not be good enough. There are cases where real yield killers were not caught by contour-based checks, resulting in missing errors during wafer inspection as well. In this paper, we expand the traditional process window checks to a broader lithographic spectrum. The method allows us to utilize additional limiters such as max intensity, contrast, and NILS checks in combination with normal CD-based checks such as bridge, pinch, or process window bands to achieve higher accuracy in failure locations. This compound check will be trained using existing on product failure data obtained from low and high resolution wafer inspection as well as eTest and yield data. The combination of contour and intensity-based checks is demonstrated to be more effective in capturing the wafer hot spots for new products. The various usage models of such enhanced ORC will also be discussed.
As technology shrinks, the requirements placed on the post-OPC solution become so exacting that even small residual optical effects are significant. Simultaneously minimizing rippling and corner rounding cannot be accom- plished in parallel in wafer patterning especially when complex asymmetric pixelated sources are used. While either effect can be moderated by accurate application of optical proximity correction, they are both charac- teristic of unfiltered diffraction due to asymmetric illumination or design geometry and will remain inherent. Corrections that over emphasize reduced corner-rounding necessarily sacrifice edge convergence, resulting in a standing wave or unacceptable rippling along an entire edge. OPC can be used to reduce the magnitude of this rippling, but fragment placing is extremely critical. In this paper, we discuss optimized OPC fragmentation that offers balanced consideration to suppressing rippling and minimizing corner rounding. Specifically, we correlate design shapes with simulated post-OPC contours to account for design geometry-dependent rippling signature given existing illumination conditions. In contrast to adaptive fragmentation that relies on multiple iterations of simulation of intensity extrema redistribution, our method predicts the optimum contour as allowed by process and fragments the mask accordingly. The maximum imaging curvature resolvable by process coupled with the rippling signature, gives rise to the exact locations of the inflection points of the wafer contour. From there we achieve the best correction results by segmenting edges at the inflection points.
To provide insights into best practices of constructing an OPC recipe that suppresses wafer image rippling, we design versatile fragmentation rules with respect to the model-based resist image. Specifically, by recognizing that rippling effect exists before fragmentation, we conduct a coarse simulation with default engine settings and extract raw ripple sinusoidal components associated with signature geometries along all dimensions. The signal is predominantly optical, hence a good representation of the unfiltered diffraction. By referencing the rippling periodic features, we derive a global solution for fragmentation with full respect to geometrical boundary conditions. The methodology enables us to generate a robust fragmentation solution with minimum trial and error and improve target convergence especially along unfavorable dimensions.
We treat the OPC engine with a classical dynamics perspective, and quantify its potential to converge in
all dimensions. The inherent engine weakness is thus taken into account for retargeting planning.
Specifically, we follow the one-dimensional helical spring model, and calculate the retarget amount as an
analogy to the spring restoring force, and eventually improve the wafer target convergence. Unlike
conventional measures, this methodology does not require patching or rebuilding the OPC engine,
therefore minimizes the cycle time. Meanwhile, it entails little risk by causing no impact on the mask
solution outside the retargeted region, thereby compartmentalizing the treatment.
Printing small vias with tight pitches is becoming very challenging and consequently, different techniques are explored to achieve a robust and stable process. These techniques include reverse tone imaging (RTI) process, source optimization, mask transmission (attenuated Phase Shift Masks (attnPSM) versus binary thin OMOG masks), three-dimensional mask effects models, and SRAF printing models. Simulations of NILS, MEEF, DoF and process variability (PV) band width across a wide range of patterns are used to compare these different techniques in addition to the experimental process window. The results show that the most significant benefits can be gained by using attnPSM masks in conjunction with source optimization and RTI process. However, this improvement alone is not enough; every facet of the computational lithography and process must be finely tuned to produce sufficient imaging quality. As technology continues to shrink, Electromagnetic Field (EMF)-induced errors limit the scalability of this process and we will discuss the need for advanced techniques to suppress and correct for them.
Source-mask optimization (SMO) in optical lithography has in recent years been the subject of increased
exploration as an enabler of 22/20nm and beyond technology nodes [1-6]. It has been shown that intensive
optimization of the fundamental degrees of freedom in the optical system allows for the creation of non-intuitive
solutions in both the source and mask, which yields improved lithographic performance. This paper
will demonstrate the value of SMO software in resolution enhancement techniques (RETs). Major benefits
of SMO include improved through-pitch performance, the possibility of avoiding double exposure, and
superior performance on two dimensional (2D) features. The benefits from only optimized source, only
optimized mask, and both source and mask optimized together will be demonstrated. Furthermore, we
leverage the benefits from intensively optimized masks to solve large array problems in memory use models
(MUMs). Mask synthesis and data prep flows were developed to incorporate the usage of SMO, including
both RETs and MUMs, in several critical layers during 22/20nm technology node development.
Experimental assessment will be presented to demonstrate the benefits achieved by using SMO during
22/20nm node development.
Model based optical proximity correction (MB-OPC) is essential for the production of advanced integrated circuits
(ICs). As the speed and functionality requirements of IC production necessitate continual reduction of the critical
dimension (CD), there is a heightened demand for more accurate and sophisticated OPC models.
The OPC is applied to the design data through a rule deck. The parameters in this rule deck, which we will call
"setup parameters", describe the fundamental way in which the OPC engine will distinguish which edges to move,
their restrictions to movement, and how the targets for the OPC are chosen. The optimization of these setup
parameters, by customizing how the OPC engine should treat specific designs, is an essential step that is performed
in order to maximize the benefit of the OPC model. Improper or deficient selection of the setup parameters strongly
affects the success or failure of the OPC model and engine to achieve the desired design shapes.
In this paper, the ability of setup parameter optimization to compensate for a weak OPC model, or conversely, how
inadequately selected setup parameters can cause a very good OPC model to function poorly is investigated. Our
approach is to use two OPC models: a good OPC model and a weak OPC model. The setup parameters will be
optimized for the weak OPC model to investigate any improvements in the overall OPC performance. Alternatively,
setup parameters chosen poorly will be used with the good OPC model to see how this will adversely affect the OPC
performance. A comparative study will be carried out in order to fully understand the effect of setup file parameters
on the overall OPC performance.
The general goal of this study is to help the OPC modelers and setup parameters optimizers to improve the quality
and performance of the OPC solution and weigh the tradeoffs associated with different OPC solution choices.
Optical and Process Correction in the 45nm node is requiring an ever higher level of characterization. The greater
complexity drives a need for automation of the metrology process allowing more efficient, accurate and effective use of
the engineering resources and metrology tool time in the fab, helping to satisfy what seems an insatiable appetite for data
by lithographers and modelers charged with development of 45nm and 32nm processes. The scope of the work
referenced here is a 45nm design cycle "full-loop automation", starting with gds formatted target design layout and
ending with the necessary feedback of one and two dimensional printed wafer metrology.
In this paper the authors consider the key elements of software, algorithmic framework and Critical Dimension Scanning
Electron Microscope (CDSEM) functionality necessary to automate its recipe creation. We evaluate specific problems with the methodology of the former art, "on-tool on-wafer" recipe construction, and discuss how the implementation of the design based recipe generation improves upon the overall metrology process. Individual target-by-target construction, use of a one pattern recognition template fits all approach, a blind navigation to the desired measurement
feature, lengthy sessions on tool to construct recipes and limited ability to determine measurement quality in the resultant
data set are each discussed as to how the state of the art Design Based Metrology (DBM) approach is implemented.
The offline created recipes have shown pattern recognition success rates of up to 100% and measurement success rates of
up to 93% for line/space as well as for 2D Minimum/Maximum measurements without manual assists during measurement.
In immersion lithography, the air gap that currently exists between the last lens element of the exposure system and the wafer is filled with a liquid that more closely matches the refractive index of the lens. There is a possibility that air bubbles, which represent a refractive index discontinuity, may be present in the liquid within the active exposure region and cause errors in imaging. One potential source of bubble generation is related to the flow of liquid over previously patterned features, or topography, during scanning or filling. This microscale entrainment mechanism is investigated experimentally and analyzed using computational fluid dynamics (CFD) modeling. The contact angle is a critical parameter that governs the behavior of the contact line and therefore the entrainment of air due to topography; the same topography on a hydrophobic surface is more likely to trap air than on a hydrophilic one. The contact angle can be a strong function of the flow velocity; a hydrophilic surface can exhibit hydrophobic behavior when the velocity of the free surface becomes large. Therefore, the contact angle was experimentally measured under static and dynamic conditions for a number of different surfaces, including resist-coated wafers. Finally, the flow of liquid across 500-nm-deep, straight-sidewall spaces of varying width was examined using both experimental visualization and CFD modeling. No air entrainment was observed or predicted over the velocity and contact angle conditions that are relevant to immersion lithography. The sharp-edged features studied here represent an extreme topography relative to the smoother features that are expected on a planarized wafer; therefore, it is not likely that the microscale entrainment of bubbles due to flow over wafer-level topography will be a serious problem in immersion lithography systems.
Immersion lithography is proposed as a method for improving optical microlithography resolution to 45 nm and below via the insertion of a high-refractive-index liquid between the final lens surface and the wafer. Because the liquid acts as a lens component during the imaging process, it must maintain a high, uniform optical quality. One potential source of optical degradation involves changes in the liquid's index of refraction caused by changing temperatures during the exposure process. Two-dimensional computational fluid dynamics models from previous studies investigated the thermal and fluid effects of the exposure process on the liquid temperature associated with a single die exposure. We include the global heating of the wafer from multiple die exposures to better represent the "worst-case" liquid heating that occurs as an entire wafer is processed. The temperature distributions predicted by these simulations are used as the basis for rigorous optical models to predict effects on imaging. We present the results for the fluid flow, thermal distribution, and imaging simulations. Both aligned and opposing flow directions are investigated for a range of inlet pressures that are consistent with either passive systems or active systems using filling jets.
In immersion lithography, the air gap that currently exists between the last lens element of the exposure system and the wafer is filled with a liquid that more closely matches the refractive index of the lens. There is a possibility that air bubbles, which represent a refractive index discontinuity, may be present in the liquid within the active exposure region and cause errors in imaging. One potential source of bubble generation is related to the flow of liquid over previously patterned features, or topography, during scanning or filling. This microscale entrainment mechanism is investigated experimentally and analyzed using computational fluid dynamics (CFD) modeling. The contact angle is a critical parameter that governs the behavior of the contact line and therefore the entrainment of air due to topography; the same topography on a hydrophobic surface is more likely to trap air than on a hydrophilic one. The contact angle can be a strong function of the flow velocity; a hydrophilic surface can exhibit hydrophobic behavior when the velocity of the free surface becomes large. Therefore, the contact angle was experimentally measured under static and dynamic conditions for a number of different surfaces, including resist-coated wafers. Finally, the flow of liquid across 500-nm deep, straight-sidewall spaces of varying width was examined using both experimental visualization and CFD modeling. No air entrainment was observed or predicted over the velocity and contact angle conditions that are relevant to immersion lithography. The sharp-edged features studies here represent an extreme topography relative to the smoother features that are expected on a planarized wafer; therefore, it is not likely that the microscale entrainment of bubbles due to flow over wafer-level topography will be a serious problem in immersion lithography systems.
KEYWORDS: Ion beams, 3D modeling, Systems modeling, Process modeling, Photomask technology, Photomasks, Gases, Computational fluid dynamics, Computing systems, Statistical modeling
Focused Ion Beam (FIB) systems can be used to repair photomasks by accurately depositing and/or removing absorber material at the nanometer-scale. These repairs are enabled or enhanced by process gases delivered to the area of ion beam impact on the sample. To optimize gas delivery, three-dimensional computational fluid dynamics (CFD) models of selected gas delivery systems for FIB tools have been developed.
The models were verified through an experiment in which water vapor was dispensed onto a cryogenically-cooled substrate. Water vapor hitting the sample surface immediately freezes. The height of the deposited ice on the sample surface is proportional to the product of the local gas flux and the exposure time. The gas flux predicted by the CFD model was found to be in good agreement with the experimental measurement.
The CFD models were used to predict the mass flux of process gas and the pressure distribution at the sample surface for various gas delivery system designs. The mass flux and pressure relate directly to the amount of reactants that are available for the FIB repair processes. Parametric studies of key gas dispense system geometric parameters are presented and used to optimize the gas dispense system geometry.
Immersion lithography has been proposed as a method of improving optical lithography resolution to 50 nm and below. The premise behind the concept is to increase the index of refraction in the space between the lens and wafer through the insertion of a high refractive index liquid in place of the low refractive index air that currently fills the gap. This paper presents three studies related to potential problem areas for immersion lithography. The first study investigates the entrainment of air as liquid flows over features in the wafer topology. Bubbles are undesirable because they introduce changes in the index of refraction in the optical path that can lead to imaging errors. The second investigation examines liquid heating due to the absorption of the incident energy by the fluid as well as heat transferred from the exposed wafer and viscous heating. This temperature elevation can lead to changes in the liquid's index of refraction which may lead to optical degradation of the fluid. The final investigation examines the potentially significant normal and shear stresses induced on both the lens and wafer surface due to the increased viscosity and density of the liquid as compared with air. These mechanical loads may cause the lens to distort or shift in its mounting. This paper presents the results of the numerical thermal, flow, and structural simulations used to analyze these various critical issues.
Immersion lithography has been proposed as a method for improving optical microlithography resolution to 45 nm and below via the insertion of a high refractive index liquid between the final lens surface and the wafer. Because the liquid will act as a lens component during the imaging process, it must maintain a high, uniform optical quality. One potential source of optical degradation involves changes in the liquid’s index of refraction caused by changing temperatures during the exposure process. Two-dimensional computational fluid dynamics models from previous studies have investigated the thermal and fluid effects of the exposure process on the liquid temperature associated with a single die exposure. Here, the global heating of the wafer from multiple die exposures has been included to better represent the “worst case” liquid heating that will occur as an entire wafer is processed. The temperature distributions predicted by these simulations were used as the basis for rigorous optical models to predict effects on imaging. This paper presents the results for the fluid flow, thermal distribution, and imaging simulations. Both aligned and opposing flow directions were investigated for a range of inlet pressures that are consistent with either passive systems or active systems using filling jets.
The premise behind immersion lithography is to improve resolution by increasing the index of refraction in the space between the final projection lens of an exposure system and the device wafer by inserting a high-index liquid in place of the low-index air that currently fills the gap. We present a preliminary analysis of the fluid flow characteristics of a liquid between the lens and the wafer. The objectives of this feasibility study are to identify liquid candidates that meet the fluid mechanical requirements and to verify modeling tools for immersion lithography. The filling process was analyzed to simplify the problem and identify important fluid properties and system parameters. Two-dimensional computational fluid dynamics (CFD) models of the fluid between the lens and the wafer are developed and used to investigate a passive technique for filling this gap, in which a liquid is dispensed onto the wafer as a puddle, and then the wafer and liquid move under the lens. Numerical simulations include a parametric study of the key dimensionless groups influencing the filling process, and an investigation of the effects of the fluid/wafer and fluid/lens contact angles and wafer direction. The model results are compared with experimental measurements.
We describe an assessment of the pressure rise that may be induced by the short-duration but high-power pulses associated with the immersion lithography exposure process. A conservative model provides an upper bound on the pressure rise related to the expansion of the fluid near the wafer due to rapid heating. This rapid heating process is simulated as a constant heat flux from the substrate. The resulting temperature rise causes a change in pressure that propagates into the fluid at the speed of sound. The net change in the mass of the fluid contained within the pressure wavefront must be zero. This continuity requirement allows an estimate of the pressure rise and its penetration depth into the gap. For the nominal conditions associated with 193-nm immersion lithography, the model predicts that the pressure near the wafer surface may rise by as much as 7.3 kPa during the laser pulse. At the end of the laser pulse, this pressure rise will extend nominally 75 μm into the gap. Following the laser pulse, this pressure rise will rapidly decay as the pressure wavefront continues to propagate across the gap and eventually out of the under-lens region.
The focus of this paper is on the development and implementation of a correction strategy that enables mask manufacturers to maintain the yields at current levels while simultaneously reducing registration errors by several nanometers. An alternate consequence is that yields at current registration specifications are improved. Previous work has shown that one source of image placement error is the chrome stress relief caused by etching. This can cause over 25 nm of distortion from the resist pattern to the final etched chrome pattern. Theoretical and experimental data have shown that the distortion has a radial signature, which can be significantly reduced by traditional magnification correction. If the magnitude of this correction term can be predicted before patterning, the magnification can be implemented as a correction term in the writing process, minimizing registration errors. Studies have shown that the percent clear area of the mask, x-field size, y-field size, and chrome stress are the key parameters that will affect the correction term. Data based on finite element simulations were first fit to these parameters to obtain a predictive curve based upon theory. Experimental reticles were then written to test the theoretical prediction. The predictions were found to coincide well with the experimental data; registration improvements of over 20 nm were observed. The correlation was then applied to a set of production reticles. There was an observable improvement in registration after the correlation was implemented, although less than that seen in the experimental reticles.
The premise behind immersion lithography is to improve the resolution for optical lithography technology by increasing the index of refraction in the space between the final projection lens of an exposure system and the device wafer. This is accomplished through the insertion of a high index liquid in place of the low index air that currently fills the gap. The fluid management system must reliably fill the lens-wafer gap with liquid, maintain the fill under the lens throughout the entire wafer exposure process, and ensure that no bubbles are entrained during filling or scanning. This paper presents a preliminary analysis of the fluid flow characteristics of a liquid between the lens and the wafer in immersion lithography. The objective of this feasibility study was to identify liquid candidates that meet both optical and specific fluid mechanical requirements. The mechanics of the filling process was analyzed to simplify the problem and identify those fluid properties and system parameters that affect the process. Two-dimensional computational fluid dynamics (CFD) models of the fluid between the lens and the wafer were developed for simulating the process. The CFD simulations were used to investigate two methods of liquid deposition. In the first, a liquid is dispensed onto the wafer as a “puddle” and then the wafer and liquid move under the lens. This is referred to as passive filling. The second method involves the use of liquid jets in close proximity to the edge of the lens and is referred to as active filling. Numerical simulations of passive filling included a parametric study of the key dimensionless group influencing the filling process and an investigation of the effects of the fluid/wafer and fluid/lens contact angles and wafer direction. The model results are compared with experimental measurements. For active filling, preliminary simulation results characterized the influence of the jets on fluid flow.
Extreme ultraviolet (EUV) lithography has emerged as the forerunner in the selection process to become the industry's choice as the technology for next-generation lithography (NGL). An advantageous characteristic of the EUV reticle is that it is reflective, so it can be chucked across the entirety of its backside. This chucking will aid in meeting flatness requirements as well enhancing the heat removal ability of the chuck when compared to the mounts used for optical reticles. The EUV exposure process occurs in a vacuum environment, which precludes the use of vacuum chucks; therefore, electrostatic chucks are the favored choice. One concern is that particles may become lodged between the chuck and reticle, causing distortions to occur once the reticle is chucked flat. To counter this effect, electrostatic pin chucks have been proposed. However, because of the lower heat transfer ability of the pin chuck due to the interstitial gap, thermal issues may arise. A predominant pin-chuck configuration has yet to emerge, and there is no set of standards to facilitate new designs. The intent of this paper is to provide general guidelines to assist in preliminary designs. Parameters that were seen as potentially important factors in pin chuck performance were chosen and the results are presented.
Localized resist heating effects that occur during electron beam (e-beam) patterning of optical masks can lead to critical dimension (CD) errors. These errors are due to unexpected resist development or underdevelopment, which is related to the temperature history of the resist. Eliminating this source of error requires a knowledge of the localized temperature history and how resist properties are impacted by elevated temperatures. Computer simulations of electron beam patterning of an optical mask can address the temperature history of the localized heating not possible through experimentation. Presented are the results of a study to determine the feasibility of using finite element (FE) analysis to predict these thermal effects. Two models were created to demonstrate its capabilities. The first shows that FE modeling is capable of high spatial resolution temperature profiles. The second demonstrates that FE models can be programmed to run complete patterning simulations.
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.