A high electro-optical conversion efficiency of a VCSEL (Vertical-Cavity Surface-Emitting Lasers) is one of the key requirements for their application in high power systems for heating, illumination and pumping applications. The substantial amount of degrees of freedom in the epitaxial and structural design of a VCSEL demands numerical guidance in form of technology computer aided design (TCAD) modeling for a straight forward and successful optimization of the devices. We set up a full electro-thermal optical model for the simulation of VCSEL devices. The electro-thermal part of the simulation follows a drift-diffusion model complemented by a customized, energy resolved, semi-classical carrier capture theory in the QW regions. Optical modes, eigensolutions of the vectorial electromagnetic wave equation, stem from a finite element vectorial solver. The electro-thermal and optical models are linked via the photon-rate equation using QW gain spectra (screened Hartree-Fock approximation) and iterated to self-consistency in a Gummel-type iteration scheme. For comparison and calibration, experimental reference data was extracted from oxide-confined, top-emitting VCSEL devices with an emission wavelength of 808 nm. Our simulations are in good agreement with the electro-optical characteristics of the experimental reference. With the calibrated, microscopic model, routes of design adjustment for efficiency optimization are explored. Exemplarily, the maximum VCSEL efficiency of the simulated reference design increases by 10% (absolute) when free hole absorption is switched off. Accordingly, with the combination of an electro-thermal and optical description, a balancing of the tradeoffs of pDBR doping towards reduced free carrier absorption results in a noteworthy efficiency improvement which is validated with experimental data.
The electro-optical efficiency of vertical-cavity surface-emitting lasers (VCSELs) strongly depends on the efficient carrier injection into the quantum wells (QWs) in the laser active region. Carrier injection degrades with increasing temperature, which limits VCSEL performance in high-power applications where self-heating imposes high-operating temperatures. In a numerical model, we investigate the transport of charge carriers in an 808-nm AlGaAs multi-quantum-well structure with special attention to the temperature dependence of carrier injection into the QWs. Experimental reference data were extracted from oxide-confined, top-emitting VCSELs. The transport simulations follow a drift-diffusion-model complemented by an energy-resolved carrier-capture model. The QW gain was calculated in the screened Hartree–Fock approximation. With the combination of the gain and transport model, we explain experimental reference data for the injection efficiency and threshold current. The degradation of the injection efficiency with increasing temperature is not only due to increased thermionic escape of carriers from the QWs, but also to state filling in the QWs initiated from higher threshold carrier densities. With a full opto-electro-thermal VCSEL model, we demonstrate how changes in VCSEL properties affecting the threshold carrier density, like mirror design or optical confinement, have consequences on the thermal behavior of the injection and the VCSEL performance.
The electro-optical efficiency of semiconductor vertical-cavity surface-emitting lasers (VCSELs) strongly depends on the efficient carrier injection into the quantum wells (QWs) in the laser active region. However, carrier injection degrades with increasing temperature which limits the VCSEL performance particularly in high power applications where self heating imposes high temperatures in operation. By simulation we investigate the transport of charge carriers in 808 nm AlGaAs multi-quantum-well active layers with special attention to the temperature dependence of carrier injection into the QWs. Experimental reference data was extracted from oxide-confined, top-emitting VCSELs. The transport simulations follow a drift-diffusion-model complemented by a customized, energy-resolved, semi-classical carrier capture theory. QW gain was calculated in the screened Hartree-Fock approximation with band structures from 8x8 k.p-theory. Using the gain data and by setting losses and the optical confinement factor according to experimental reference results, the appropriate threshold condition and threshold carrier densities in the QWs for a VCSEL are established in simulation for all transport considerations. With the combination of gain and transport model, we can explain experimental reference data for the injection efficiency and threshold current density. Our simulations show that the decreasing injection efficiency with temperature is not solely due to increased thermionic escape of carriers from the QWs. Carrier injection is also hampered by state filling in the QWs initiated from higher threshold carrier densities with temperature. Consequently, VCSEL properties not directly related to the active layer design like optical out-coupling or internal losses link the temperature dependent carrier injection to VCSEL mirror design.
High-power VCSEL systems with multi kilowatt output power require a good electro-optical efficiency at the point of operation i.e. at elevated temperature. The large number of optimization parameters can be structured in a way that separates system and assembly considerations from the minimization of electrical and optical losses in the epitaxially grown structure. Temperature dependent functions for gain parameters, internal losses and injection efficiency are derived from a fit to experimental data. The empirical description takes into account diameter dependent effects like current spreading or temperature dependent ones like voltage drops over hetero-interfaces in the DBR mirrors. By evaluating experimental measurements of the light output and voltage characteristics over a large range of temperature and diameter, wafer-characteristic parameters are extracted allowing to predict the performance of VCSELs made from this material in any array and assembly configuration. This approach has several beneficial outcomes: Firstly, it gives a general description of a VCSEL independent of its geometry, mounting and detuning, secondly, insights into the structure and the underlying physics can be gained that lead to the improvement potential of the structure and thirdly the performance of the structure in arrays and modules can be predicted. Experimental results validate the approach and demonstrate the significantly improved VCSEL efficiency and the benefit in high power systems.
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.