Ms. Anette Berni Profile

Anette Berni

at Inst fuer Neue Materialien gem

SPIE Involvement:

Author

Publications (1)

This will count as one of your downloads.

You will have access to both the presentation and article (if available).

DOWNLOAD NOW

This content is available for download via your institution's subscription. To access this item, please sign in to your personal account.

Email or Username Forgot your username?

Password Forgot your password?

Show

Keep me signed in

No SPIE account? Create an account

Proceedings Article | 3 April 2003 Paper

Erbium-doped sol-gel materials for optical applications

Anette Berni, Martin Mennig, Helmut Schmidt

Proceedings Volume 4944, (2003) https://doi.org/10.1117/12.472488

KEYWORDS: Erbium, Refractive index, Silica, Silicon, Aluminum, Luminescence, Semiconducting wafers, Glasses, Particles, Sol-gels

Read Abstract +

A new chemical nanotechnological route for the preparation of fully densified doped SiO₂ coatings with thicknesses in the low µm-range on Si- and SiO₂-wafers has been developed. Beside pure SiO₂ coatings, that might be useful as a buffer layer on silicon, silicate layers with increased refractive index are needed for planar waveguide application. Therefore, a synthesis for the preparation of nano particulate sols was developed, thus allowing the incorporation of dopands like Al₂O₃, PbO and Er₂O₃ for passive and active layers. Alumina was incorporated for the improvement of the Erbium solubility in active components. The coating sols consist of an organic binder, dissolved in a suspension of nanoscaled silica particles (10 nm in diameter) and dopands and were applied on Si- and SiO₂-wafers by spin coating. After removal of the binder at 500 °C, investigated by IR-spectroscopy, highly porous (nD = 1.23) but transparent doped silica layers were obtained. The densification of the layers was examined by measuring the refractive index by ellipsometry as a function of the densification temperature. Completely densified layers with thicknesses between 1.7 µm (doped SiO₂) and 6.5 µm (doped SiO₂) were obtained at temperatures between 1000 °C (doped SiO₂) and 1100 °C) (pure SiO₂). The layer thickness and unevenness was determined by interferometric measurements. The optical loss of Al₂O₃ and PbO doped layers was measured by prism coupling, the Er₂O₃ doped layers with Er³⁺ concentrations of up to 2.5 mole % show fluorescence around 1500 nm with a fluorescence lifetime of about 3.6 ms.

My Library

You currently do not have any folders to save your paper to! Create a new folder below.

Folder Name

Folder Description

View contact details

UPDATE YOUR PROFILE

Is this your profile? Update it now.

Sign into your SPIE.org account

Don’t have a profile and want one?

Create an account on SPIE.org

Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks. You are receiving this notice because your organization may not have SPIE eBooks access.*

*Shibboleth/Open Athens users─please sign in to access your institution's subscriptions.

To obtain this item, you may purchase the complete book in print or electronic format on SPIE.org.

ORGANIZATIONAL
Sign in with credentials provided by your organization.

Organizational Username

Organizational Password

Show/Hide Password

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members:

Non-members: ADD TO CART

Keywords/Phrases

Search In:

Publication Years