In this work, amplitude modulator of terahertz radiation was fabricated and experimentally studied. The sample consists of two plastic substrates, internally coated with multilayer graphene, the cavity between the plates was filled with ion gel. The fabricated sample was studied by terahertz time-domain spectroscopy method. In the experiment, waveforms of terahertz pulse transmitted through the sample at different applied DC voltage were obtained. It was shown that with increasing DC voltage, the amplitude of the transmitted terahertz radiation decreases. The results may be used to design attenuators and modulators for terahertz communication.
The Ge2Sb2Te5 phase-change alloy (GST) is known for its dramatic complex refractive index (and electrical) contrast between its amorphous and crystalline phases. Switching between such phases is also non-volatile and can be achieved on the nanosecond timescale. The combination of GST with the widespread SiN integrated optical waveguide platform led to the proposal of the all-optical integrated phase-change memory, which exploits the interaction of the guided mode evanescent field with a thin layer of GST on the waveguide top surface. The relative simplicity of the architecture allows for its flexible application for data storage, logic gating, arithmetic and neuromorphic computing. Read operation relies on the transmitted signal optical attenuation, due to the GST extinction coefficient. Write/erase operations are performed via the same optical path, with a higher power ad-hoc pulsing scheme, which locally increases the temperature and triggers either the melt-quench process (write) or recrystallization (erase), encoding the information into the GST crystal fraction. Here we investigate the physical mechanisms involved in the write/erase and read processes via computational methods, with the view to explore novel architecture concepts that improve memory speed, energy efficiency and density. We show the achievements of the development of a 3D simulation framework, performing self-consistent calculations for wavepropagation, heat diffusion and phase-transition processes. We illustrate a viable memory optimization route, which adopts sub-wavelength plasmonic dimer nanoantenna structures to harvest the optical energy and maximize light-matter interaction. We calculate both a speed and energy efficiency improvement of around one order of magnitude, with respect to the conventional (non-plasmonic) device architecture.
In this work we combine the already mature silicon and silicon nitride platforms with novel reconfigurable materials such as 2D materials, liquid crystals and phase change materials. An actively reconfigurable 1D photonic crystal multi-channel filter based on Si-on-insulator and liquid crystal platforms is demonstrated with extraordinary large quality factor, Q ∼ 104. A complete study and design of an optical routing and multilevel volatile photonic memory based on graphene capacitor concept for future high performance computing using Silicon rich nitride is shown with a bandwidth of 64 GHz and energy power consumption per bit as low as 0.22 pJ. Finally, an optical switch based on germanium-antimony-tellurium phase change material (GST) is experimentally demonstrated for O-band operation with the extinction ratio as high as 10 dB between the amorphous and the crystalline states.
In this work, we propose and theoretically investigate the first dynamically tunable metasurface based on new twodimensional (2D) material - multi-layer graphene (MLG). As a basis for metasurface development, the results of experimental studies in THz frequency band of 80-layered graphene on dielectric substrate under external optical pumping were used. The metasurface consist of the Polymethylpentene (TPX) substrate and cross-shaped MLG pattern. In addition, the structure of the metasurface is very simple and can be fabricated by chemical vapor deposition and laser engraving. Proposed non-metallic metasurface is high-potential candidate for designing an active THz devises.
In this work, we study infrared optical pump-induced changes in terahertz conductivity of multi-layer graphene on a silicon substrate using terahertz time-domain spectroscopy. Results indicate that the conductivity and optical parameters of investigated material strongly depend on a pumping intensity and the presence of FeCl3 molecules intercalation. The findings are helpful for determining the most optically tunable material towards designing of optically controllable terahertz devices based on new two-dimensional material beyond graphene monolayer.
Photonic lab-on-a-chip portable platforms have proved to be very sensitive, rapid in analysis and easy-to-use. However, they still rely on a bulk light source to operate, thus hindering the actual portability and potential for commercial realization. In the present paper we have proposed a design for a light emitting structure that could be easily implemented on chip. The design consists of a Si3N4 strip waveguide on SiO2 substrate, with an active material that emits light as top and lateral cladding. The cross-section of the waveguide was optimised to support both excitation and emission as guided modes, with a high mutual overlap and high confinement to the cladding. This ensures an efficient light emission activation from the cladding and a stable propagation along the waveguide. The proposed structure shows to be operative along the visible range; demonstrated from 400nm to 633nm. The procedure we have followed along this report can be virtually used for designing the cross-section geometry of any strip waveguide system so that the performance is optimised for a given cladding refractive index and emission and excitation wavelengths. In addition we have proposed the use of polymeric quantum dots as the gain material to be used as active cladding. The ease of on-chip integration of this gain material via spin-coating, together with the simplicity of our light emitting waveguide, makes our light source design suitable for large-scale integration on Si chip. Specially, for lab-on-chip applications where multiplexed operation is essential.
We report ultra-narrow-linewidth erbium-doped aluminum oxide (Al2O3:Er3+) distributed feedback (DFB) lasers with a wavelength-insensitive silicon-compatible waveguide design. The waveguide consists of five silicon nitride (SiNx) segments buried under silicon dioxide (SiO2) with a layer Al2O3:Er3+ deposited on top. This design has a high confinement factor (> 85%) and a near perfect (> 98%) intensity overlap for an octave-spanning range across near infrared wavelengths (950–2000 nm). We compare the performance of DFB lasers in discrete quarter phase shifted (QPS) cavity and distributed phase shifted (DPS) cavity. Using QPS-DFB configuration, we obtain maximum output powers of 0.41 mW, 0.76 mW, and 0.47 mW at widely spaced wavelengths within both the C and L bands of the erbium gain spectrum (1536 nm, 1566 nm, and 1596 nm). In a DPS cavity, we achieve an order of magnitude improvement in maximum output power (5.43 mW) and a side mode suppression ratio (SMSR) of > 59.4 dB at an emission wavelength of 1565 nm. We observe an ultra-narrow linewidth of ΔνDPS = 5.3 ± 0.3 kHz for the DPS-DFB laser, as compared to ΔγQPS = 30.4 ± 1.1 kHz for the QPS-DFB laser, measured by a recirculating self-heterodyne delayed interferometer (RSHDI). Even narrower linewidth can be achieved by mechanical stabilization of the setup, increasing the pump absorption efficiency, increasing the output power, or enhancing the cavity Q.
In this paper, we discuss a back-end CMOS fabrication process for the large-scale integration of 2D materials on SOI (siliconon-insulator) platform and present a complete theoretical study of the change in the effective refractive index of 2D materialsenabled silicon nitride waveguide structures. The chemical vapour deposition (CVD) and liquid exfoliation fabrication methods are described for the fabrication of graphene, WS2 and MoS2 thin films. Finite-difference frequency-domain (FDFD) approach and the Transfer Matrix Method were used in order to mathematically describe these structures. The introduction of thin films of 2D material onto Si3N4 waveguide structures allows manipulation of the optical characteristics to a high degree of precision by varying the Fermi-level through the engineering of the number of atomically thin layers or by electrical tuning, for example. Based on the proposed tuning approach, designs of graphene, WS2 and MoS2 enabled Si3N4 micro-ring structures are presented for the visible and NIR range, which demonstrate versatility and desirable properties for a wide range of applications, such as bio-chemical sensing and optical communications.
Phase-change materials (PCMs) provide a route to adding dynamic tunability and reconfigurability to many types of photonic devices by changing the phase-state of the PCM itself. In this work we discuss the use of the phase-change alloy GeSbTe (GST) in the design of dynamically tunable filters operating in the infrared. GST is used to manipulate the extraordinary optical transmission of a periodic hole-array in a metallic layer, so creating ultra-thin, tunable band-pass filters. We discuss the use of such filters for multispectral imaging, suggest some approaches to overcome various practical challenges, and, finally, show that through the use of appropriate post processing algorithms this tunable filter could provide a cheap, ultra-thin, real-time, and relatively high performance multispectral imaging device.
In this work, a technique for precise position control of individual transmission channels in a triple-cavity resonator
device is proposed. The resonator design is based on Si photonic crystal (PhC) and liquid crystal technologies. By filling
of the particular air grooves in one-dimensional, Si-Air PhC with nematic liquid crystal, an efficient coupled Fabry-
Pérot resonator can be realized in which a wide stop band is used for broad frequency channel separation and high out-of-
band reflection. By random tuning of the refractive index in all coupled cavities, a continuous individual tuning of the
central channel (or edge channels) up to 25% of the total channel spacing is demonstrated. Additionally, an approach
for precise controllable improvement of transmission up to 100% is demonstrated for the edge channels with decrease of
the channel spacing 1%. Based on the proposed design, a prototype triple-channel filter was fabricated on Silicon-On-Insulator platform and optimized to the desired operational mode.
Two-dimensional (2D) photonic crystal (PC) bars with 6 and 21 periods were fabricated by simultaneous photoelectrochemical
etching of macropores and trenches in a pre-patterned silicon wafer. The structures had square
lattice of cylindrical pores and were terminated by nonmodulated silicon pre-layers. The infrared reflection
spectra of the PC bars have been simulated using scattering matrix method. In order to take into account the
roughness of pore inner surface an additional silicon layer around the pores was introduced with a fitted complex
refractive index. A comparison between the simulated refection spectra and those obtained experimentally
demonstrates a satisfactory agreement in the region of secondary photonic band gaps.
This paper reports on investigation and possible applications of the optical elements based on one-dimensional (1D)
multi-component photonic crystal (PCs). The gap map approach and the transfer matrix method were used in order to
mathematically describe multi-component 1D PC structures. We have found that the introduction of the additional
regular layer into PC affects the properties of high-order PBGs, resulting in their vanishing in the certain range of the
wavelengths and the formation of wide regions of total transparency instead. Tuning the number, position and width of
these regions of total transparency in Si PCs has been demonstrated using the map of transmission bands. By analogy
with multilayer dielectric coatings the additional component in multi-component Si PCs can be considered as an
antireflection layer. The experimental results for the high-contrast multi-component PCs based on SiO2-Si-SiO2-Air
structure with wide transmission bands are demonstrated in this study. The suggested approach can also be applied to the
design of any micro- and nano- structured semiconductor or dielectric materials for application across wide
electromagnetic spectrum.
The model of transformation of one-dimensional, high-contrast silicon photonic crystal (PC) into a Fabry-Pérot resonator
is considered. This transformation is achieved either by decreasing the number of periods up to 1.5 or the introduction of
optical defect in the ordinary multi-period PC while retaining a high modulation of the resonance peaks up to ~0.95. The
simultaneous use of maps of photonic band gaps (PBG) and transmission bands can predict the appearance or
disappearance of PBGs in the optical spectra as well as to determine their position and width depending on the order of
the band-gap (or stop-band) and the value of the filling fraction. The variation of the refractive index by 0.2 results in
significant shift of the resonance peaks of high order up to 10% of the frequency corresponding to the center of the peak.
In this study, three-component One-Dimensional (1D) Photonic Crystal (PC) structures were investigated by modeling
them as two-component PCs with an additional regular layer. The Gap Map approach and the Transfer Matrix Method
were used in order to mathematically describe these structures. The introduction of a third component to a 1D PC allows
manipulation of the optical contrast to a high degree of precision by varying the thickness and refractive index of the
additional layer. It also partially reduces the area of the photonic band gaps (PBGs) on the gap map, leaving the
remainder of the PBG area unchanged from that of the gap map for the original, two-component, PC. Using this
approach to decrease the optical contrast in photonic crystals allows omni-directional bands to be obtained in highcontrast
periodic structures constructed from, for example, an array of silicon and air.
The results of a simulation of the optical properties of a silicon Fabry-Pérot resonator (with liquid crystal filler in the
cavity), operated on the shift of the interference bands in the infrared range are presented. The possibility of tuning the
reflection coefficient from 0 to 0.95 (or transmission coefficient from 1 to 0.05) by changing the refractive index by 0.1
in the cavity and using the stop-bands and resonance peaks of high order is demonstrated. The prototype Fabry-Pérot
resonators were fabricated by dry and wet etching of (100)Si and (110)Si. Some of the resonators were fabricated on a
silicon-on-insulator platform. A superposition of transmission peaks with reflection maxima, predicted from calculations,
was confirmed experimentally, using infrared microspectroscopy, with a temperature variation from 20 oC to 65 oC and
an applied electric field from 0V to 10V.
In this paper, the forbidden Photonic Band Gaps (PBGs) of a
one-dimensional Photonic Crystal (1D PC) with additional
regular layer, t for the constant value of the lattice constant A and at normal incident of light beam were investigated.
The additional regular layer was formed from both sides of the
high-refractive index layer H. The gap map approach and
the Transfer Matrix Method were used for numerical analysis of this structure. The limitation of filling fraction values
caused by the presence of t-layer was taking into account during calculations of the Stop-Band (SB) regions for threecomponent
PC. The red shift of SBs was observed at the introduction of t-layer to conventional two-component 1D PC
with optical contrast of N=3.42/1. The blue edge of the first PBG occupied the intermediate position between the blue
edges of SBs regions of conventional PCs with different optical contrast N. This gives the opportunity of tuning the
optical contrast of PC by introduction of the additional layer, rather than using the filler, as well as fine tuning of the SB
edge. The influence of the number of periods m and the optical contrast N on the properties of SBs was also
investigated. The effect of the PBG disappearance in the gap map and in the regions of the PBGs of high order was
revealed at certain parameters of the additional layer.
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.