Butt-joint diode lasers for the efficient nonlinear optical mixing in semiconductors are suggested and successfully implemented. First experimental demonstration of the sum-frequency and second-harmonic continuous-wave room-temperature generation in the InGaAs/GaAs/InGaP butt-joint diode lasers in the edge-emitting geometry is reported. Specific features of the butt-joint device, where two butt-joined diode lasers are optically coupled but injection pumped separately, are investigated and the prospects of the difference-frequency (far-infrared) generation are outlined.
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