Gigaphoton Inc. presents a Sn-LPP EUV light source for mask inspection tools. This light source uses a minimum-mass Sn droplet generator with an in-line Sn fuel supply system, a double-pulse laser irradiation scheme with precise shooting control and a debris mitigation technology with H2 buffer-gas flow. During 1500 hours of continuous operation, a brightness of 120W/mm2sr at the plasma point, a stable EUV energy 3σ-value below 5% and a high availability of 99% have been obtained without reflectivity degradation of the EUV collector mirror. We are currently developing key components for higher repetition rate to further increase the brightness.
Gigaphoton Inc. is developing a laser produced plasma (LPP) extreme ultra violet (EUV) light source for high-volumemanufacturing (HVM) semiconductor lithography. Original technologies and key components of this source include a high-power carbon dioxide (CO2) laser with 15ns pulse duration, a short wavelength solid-state pre-pulse laser with 10ps pulse duration, a highly stabilized small droplet (DL) target, a precise laser-DL shooting control system and debris mitigation technology with a magnetic field. In this paper, an update of the development progress of the total system and of the key components is presented.
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