Dr. Axel M. Zibold Profile

Dr. Axel M. Zibold

Head of Global Sales & Customer Support at Carl Zeiss SMT GmbH

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Author

Publications (28)

Proceedings Article | 11 December 2009 Paper

In-die actinic metrology on photomasks for low k1 lithography

Dirk Beyer, Ute Buttgereit, Thomas Scheruebl, Axel Zibold

Proceedings Volume 7520, 752016 (2009) https://doi.org/10.1117/12.839973

KEYWORDS: Photomasks, Semiconducting wafers, Critical dimension metrology, Metrology, Image registration, Scanners, Lithography, Phase measurement, Printing, Phase shifting

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Proceedings Article | 20 October 2006 Paper

Process window enhancement for 45-nm node using alterable transmission phase-shifting materials

Hans Becker, Markus Renno, Guenter Hess, Ute Buttgereit, Corinna Koepernik, Lorenz Nedelmann, Mathias Irmscher, Robert Birkner, Axel Zibold, Thomas Scheruebl

Proceedings Volume 6349, 63490J (2006) https://doi.org/10.1117/12.686022

KEYWORDS: Photomasks, Phase shifts, Etching, Silica, Tantalum, Lithography, Optical lithography, Semiconducting wafers, Scanners, Phase shifting

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Proceedings Article | 20 October 2006 Paper

Improved prediction of across chip linewidth variation (ACLV) with photomask aerial image CD metrology

Eric Poortinga, Axel Zibold, Will Conley, Lloyd Litt, Bryan Kasprowicz, Michael Cangemi

Proceedings Volume 6349, 63490N (2006) https://doi.org/10.1117/12.686449

KEYWORDS: Photomasks, Semiconducting wafers, Critical dimension metrology, Metrology, Scanners, Photoresist processing, Data acquisition, Lithography, Image acquisition, Manufacturing

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Critical dimension (CD) metrology is an important process step within the wafer fab. Knowledge of the CD values at resist level provides a reliable mechanism for the prediction of device performance. Ultimately tolerances of device electrical performance drive the wafer linewidth specifications of the lithography group. Staying within this budget is influenced mainly by the scanner settings, resist process and photomask quality. At the 65nm node the ITRS roadmap calls for sub-3nm photomask CD uniformity to support a sub-3nm wafer level CD uniformity. Meeting these targets has proven to be a challenge. What can be inferred from these specifications is that photomask level CD performance is the direct contributor to wafer level CD performance. With respect to phase shift masks, criteria such as phase and transmission control are also tightened with each technology node. A comprehensive study is presented supporting the use of photomask aerial image emulation CD metrology to predict wafer level Across Chip Linewidth Variation (ACLV). Using the aerial image can provide more accurate wafer level prediction because it inherently includes all contributors to image formation such as the physical CD, phase, transmission, sidewall angle, and other material properties. Aerial images from different photomask types were captured to provide across chip CD values. Aerial image measurements were completed using an AIMS^TMfab193i with its through-pellicle data acquisition capability including the Global CDU Map^TM software option for AIMS^TM tools. The through-pellicle data acquisition capability is an essential prerequisite for capturing final CD data (after final clean and pellicle mounting) before the photomask ships or for re-qualification at the wafer fab. Data was also collected on these photomasks using a conventional CD-SEM metrology system with the pellicles removed. A comparison was then made to wafer prints demonstrating the benefit of using aerial image CD metrology.

Proceedings Article | 21 June 2006 Paper

Printability study with polarization based AIMS fab 193i to investigate mask polarization effects

Axel Zibold, Ulrich Stroessner, Eric Poortinga, Rainer Schmid, Thomas Scherübl, Norbert Rosenkranz, Wolfgang Harnisch

Proceedings Volume 6281, 628108 (2006) https://doi.org/10.1117/12.692728

KEYWORDS: Polarization, Photomasks, Scanners, Reticles, Semiconducting wafers, Transmittance, Phase shifts, Printing, Immersion lithography, Semiconductors

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Proceedings Article | 20 May 2006 Paper

First results for hyper NA scanner emulation from AIMS 45-193i

Axel Zibold, Ulrich Strössner, Norbert Rosenkranz, Andrew Ridley, Rigo Richter, Wolfgang Harnisch, Alvina Williams

Proceedings Volume 6283, 628312 (2006) https://doi.org/10.1117/12.681863

KEYWORDS: Scanners, Polarization, Photomasks, Semiconducting wafers, Reticles, Binary data, Immersion lithography, Printing, Optical testing, Lithography

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Proceedings Article | 19 May 2006 Paper

Extended process window using variable transmission PSM materials for 65 nm and 45 nm node

Corinna Koepernik, Hans Becker, Robert Birkner, Ute Buttgereit, Mathias Irmscher, Lorenz Nedelmann, Axel Zibold

Proceedings Volume 6283, 62831D (2006) https://doi.org/10.1117/12.681877

KEYWORDS: Photomasks, Etching, Nanoimprint lithography, Phase shifts, Tantalum, Semiconducting wafers, Tolerancing, Optical lithography, Lithography, Transmittance

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Proceedings Article | 24 March 2006 Paper

Printability study with polarisation capable AIMS™ fab 193i to study polarisation effects

Axel Zibold, Ulrich Stroessner, Andrew Ridley, Thomas Scherübl, Norbert Rosenkranz, Wolfgang Harnisch, Eric Poortinga, Rainer Schmid, Joost Bekaert, Vicky Philipsen, Lieve Van Look, Peter Leunissen

Proceedings Volume 6152, 61522F (2006) https://doi.org/10.1117/12.656235

KEYWORDS: Polarization, Photomasks, Scanners, Reticles, Semiconducting wafers, Printing, Critical dimension metrology, Transmittance, Binary data, Polarizers

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Proceedings Article | 24 March 2006 Paper

An advanced study for defect disposition through 193-nm aerial imaging

Arndt Dürr, Axel Zibold, Klaus Böhm

Proceedings Volume 6152, 61522M (2006) https://doi.org/10.1117/12.657622

KEYWORDS: Photomasks, Metrology, Halftones, Airborne remote sensing, Printing, Semiconducting wafers, Beam homogenizers, Reticles, Inspection, Optical simulations

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Proceedings Article | 5 November 2005 Paper

Image imbalance compensation in alternating phase-shift masks towards the 45nm node through-pitch imaging

Lieve Van Look, Bryan Kasprowicz, Axel Zibold, Wolfgang Degel, Geert Vandenberghe

Proceedings Volume 5992, 59921S (2005) https://doi.org/10.1117/12.632112

KEYWORDS: Etching, Chromium, Semiconducting wafers, Photomasks, Printing, Electroluminescence, Reticles, Optical proximity correction, Scanners, Manufacturing

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Proceedings Article | 5 November 2005 Paper

Compensating mask topography effects in CPL through-pitch solutions toward the 45nm node

Joost Bekaert, Vicky Philipsen, Geert Vandenberghe, Doug van den Broeke, Wolfgang Degel, Axel Zibold

Proceedings Volume 5992, 59921O (2005) https://doi.org/10.1117/12.632084

KEYWORDS: Etching, Photomasks, Reticles, Electroluminescence, Semiconducting wafers, Lithography, Phase shifts, Diffraction, Immersion lithography, Scanners

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Proceedings Article | 28 June 2005 Paper

Advances with the new AIMS fab 193 2nd generation: a system for the 65 nm node including immersion

Axel Zibold, E. Poortinga, H. v. Doornmalen, R. Schmid, T. Scherubl, W. Harnisch

Proceedings Volume 5853, (2005) https://doi.org/10.1117/12.617508

KEYWORDS: Photomasks, Scanners, Semiconducting wafers, Polarization, Liquids, Reticles, Critical dimension metrology, Binary data, Imaging systems, Refractive index

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Proceedings Article | 16 June 2005 Paper

Application results at 193nm: lithography emulation by aerial imaging and supplementary high resolution measurements

Axel Zibold, Rainer Schmid, Klaus Bohm, Robert Brunner, Arndt Durr

Proceedings Volume 5835, (2005) https://doi.org/10.1117/12.637309

KEYWORDS: Photomasks, Image resolution, Semiconducting wafers, Lithography, Reticles, Binary data, Optical proximity correction, 193nm lithography, Airborne remote sensing, Scanners

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Proceedings Article | 10 May 2005 Paper

Advances in hardware, software, and automation for 193nm aerial image measurement systems

Axel Zibold, R. Schmid, A. Seyfarth, M. Waechter, W. Harnisch, H. Doornmalen

Proceedings Volume 5752, (2005) https://doi.org/10.1117/12.599715

KEYWORDS: Photomasks, Semiconducting wafers, Imaging systems, Reticles, Critical dimension metrology, Optical proximity correction, Lithographic illumination, Scanners, Lithography, 193nm lithography

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A new, second generation AIMS fab 193 system has been developed which is capable of emulating lithographic imaging of any type of reticles such as binary and phase shift masks (PSM) including resolution enhancement technologies (RET) such as optical proximity correction (OPC) or scatter bars. The system emulates the imaging process by adjustment of the lithography equivalent illumination and imaging conditions of 193nm wafer steppers including circular, annular, dipole and quadrupole type illumination modes. The AIMS fab 193 allows a rapid prediction of wafer printability of critical mask features, including dense patterns and contacts, defects or repairs by acquiring through-focus image stacks by means of a CCD camera followed by quantitative image analysis. Moreover the technology can be readily applied to directly determine the process window of a given mask under stepper imaging conditions. Since data acquisition is performed electronically, AIMS in many applications replaces the need for costly and time consuming wafer prints using a wafer stepper/ scanner followed by CD SEM resist or wafer analysis. The AIMS fab 193 second generation system is designed for 193nm lithography mask printing predictability down to the 65nm node. In addition to hardware improvements a new modular AIMS software is introduced allowing for a fully automated operation mode. Multiple pre-defined points can be visited and through-focus AIMS measurements can be executed automatically in a recipe based mode. To increase the effectiveness of the automated operation mode, the throughput of the system to locate the area of interest, and to acquire the through-focus images is increased by almost a factor of two in comparison with the first generation AIMS systems. In addition a new software plug-in concept is realised for the tools. One new feature has been successfully introduced as "Global CD Map", enabling automated investigation of global mask quality based on the local determination of wafer level CD at multiple pre-defined measurement points on the mask. This feature supports both reticle manufacturing in mask shops and lithographic process analysis in the Wafer Fab environment. Based on the newly developed software the AIMS can speed up mask development in both the design process and OPC verification.

Proceedings Article | 27 January 2005 Paper

Using the aerial image measurement technique to speed up mask development for 193-nm immersion and polarization lithography

Axel Zibold, Wolfgang Harnisch, Thomas Scheruebl, Norbert Rosenkranz, Joern Greif

Proceedings Volume 5645, (2005) https://doi.org/10.1117/12.576948

KEYWORDS: Photomasks, Polarization, Scanners, Semiconducting wafers, Reticles, Liquids, Manufacturing, Tolerancing, Neodymium, Lithography

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Proceedings Article | 6 December 2004 Paper

Evaluation of printability of crystal growth defects in a 193-nm lithography environment using AIMS

Rainer Schmid, Axel Zibold, Kaustuve Bhattacharyya, Xuemei Chen, Brian Grenon

Proceedings Volume 5567, (2004) https://doi.org/10.1117/12.569375

KEYWORDS: Lithography, Crystals, Reticles, Inspection, Photomasks, Printing, Semiconducting wafers, Scanners, Lithographic illumination, Raman spectroscopy

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Proceedings Article | 6 December 2004 Paper

Aerial image measuring system at 193 nm: a tool-to-tool comparison and global CD mapping

Axel Zibold, Rainer Schmid, Klaus Boehm, Robert Birkner

Proceedings Volume 5567, (2004) https://doi.org/10.1117/12.569283

KEYWORDS: Photomasks, Critical dimension metrology, Reticles, Semiconducting wafers, Scanners, Lithography, Inspection, Optical proximity correction, Image processing, Scanning electron microscopy

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Proceedings Article | 6 December 2004 Paper

Immersion mask inspection with hybrid-microscopic systems at 193 nm

Robert Brunner, Alexander Menck, Reinhard Steiner, Gerd Buchda, Steffen Weissenberg, Uwe Horn, Axel Zibold

Proceedings Volume 5567, (2004) https://doi.org/10.1117/12.569019

KEYWORDS: Photomasks, Objectives, Microscopes, Image resolution, Solids, Diffractive optical elements, Imaging systems, Silica, Refractive index, Inspection

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Proceedings Article | 20 August 2004 Paper

Actinic aerial image measurement for qualification of defect on 157-nm photomask

Takashi Yasui, Iwao Higashikawa, Peter Kuschnerus, Wolfgang Degel, Klaus Boehm, Axel Zibold, Yuji Kobiyama, Jan-Peter Urbach, Christof Schilz, Silvio Teuber Semmler

Proceedings Volume 5446, (2004) https://doi.org/10.1117/12.557762

KEYWORDS: Photomasks, Lithography, Semiconducting wafers, Semiconductors, Metrology, Wafer-level optics, Image quality, Lithographic illumination, CCD cameras, Binary data

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Proceedings Article | 20 August 2004 Paper

Aerial image measurement technique for automated reticle defect disposition (ARDD) in wafer fabs

Axel Zibold, Rainer Schmid, B. Stegemann, Thomas Scheruebl, Wolfgang Harnisch, Yuji Kobiyama

Proceedings Volume 5446, (2004) https://doi.org/10.1117/12.557811

KEYWORDS: Photomasks, Semiconducting wafers, Pellicles, Reticles, Inspection, Lithography, Scanners, Particles, Crystals, Polarization

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Proceedings Article | 2 June 2004 Paper

Aerial image measurement technique for today's and future 193-nm lithography mask requirements

Axel Zibold, Thomas Scheruebl, Alexander Menck, Robert Brunner, J. Greif

Proceedings Volume 5504, (2004) https://doi.org/10.1117/12.568016

KEYWORDS: Photomasks, Lithography, Image resolution, Objectives, 193nm lithography, Lithographic illumination, Beam homogenizers, Polarization, Reticles, Semiconducting wafers

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Proceedings Article | 28 May 2004 Paper

First results from AIMS beta tool for 157-nm lithography

Silvio Teuber, Iwao Higashikawa, Jan-Peter Urbach, Christof Schilz, Roderick Koehle, Axel Zibold

Proceedings Volume 5377, (2004) https://doi.org/10.1117/12.536670

KEYWORDS: Photomasks, Phase shifts, Semiconducting wafers, Optical resolution, Lithography, Etching, Binary data, Wafer-level optics, CCD image sensors, Optical simulations

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Proceedings Article | 24 May 2004 Paper

Aerial image measurement technique for fast evaluation of 193-nm lithography masks

Axel Zibold, Thomas Scheruebl, Wolfgang Harnisch, Robert Brunner, J. Greif

Proceedings Volume 5375, (2004) https://doi.org/10.1117/12.533021

KEYWORDS: Photomasks, Semiconducting wafers, Lithography, Scanners, Reticles, Polarization, Phase shifts, Beam homogenizers, Lithographic illumination, Homogenization

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Proceedings Article | 17 December 2003 Paper

EUV mask simulation for AIMS

Roman Windpassinger, Norbert Rosenkranz, Thomas Scherubl, Peter Evanschitzky, Andreas Erdmann, Axel Zibold

Proceedings Volume 5256, (2003) https://doi.org/10.1117/12.518053

KEYWORDS: Photomasks, Extreme ultraviolet, Extreme ultraviolet lithography, Critical dimension metrology, Semiconducting wafers, Imaging systems, Lithographic illumination, Reticles, EUV optics, Wafer-level optics

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Proceedings Article | 28 August 2003 Paper

Actinic aerial image measurement tool for 157-nm lithography

Peter Kuschnerus, Thomas Engel, Axel Zibold, Claudia Hertfelder, Takashi Yasui, Iwao Higashikawa, Christof Schilz, Armin Semmler

Proceedings Volume 5130, (2003) https://doi.org/10.1117/12.504064

KEYWORDS: Photomasks, Lithography, Lithographic illumination, Reticles, Binary data, CCD cameras, Semiconducting wafers, Printing, Optical alignment, Charge-coupled devices

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Proceedings Article | 28 August 2003 Paper

Actinic aerial image measurement tool for 157-nm mask qualification

Takashi Yasui, Iwao Higashikawa, Peter Kuschnerus, Thomas Engel, Axel Zibold, Claudia Hertfelder, Yuji Kobiyama, Jan-Peter Urbach, Christof Schilz, Armin Semmler

Proceedings Volume 5130, (2003) https://doi.org/10.1117/12.504215

KEYWORDS: Photomasks, Binary data, CCD image sensors, CCD cameras, Image quality, Semiconducting wafers, Vacuum ultraviolet, Lithography, Vibration control, Optical resolution

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Proceedings Article | 28 May 2003 Paper

Performance of the aerial image measurement system for 157-nm lithography

Peter Kuschnerus, Thomas Engel, Wolfgang Harnisch, Claudia Hertfelder, Axel Zibold, Jan-Peter Urbach, Christof Schilz, Klaus Eisner

Proceedings Volume 5148, (2003) https://doi.org/10.1117/12.514958

KEYWORDS: Photomasks, Lithography, Lithographic illumination, Vacuum ultraviolet, Charge-coupled devices, CCD image sensors, Binary data, Reticles, Image quality, CCD cameras

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Proceedings Article | 27 December 2002 Paper

Aerial image measurement system for 157-nm lithography

Klaus Eisner, Peter Kuschnerus, Jan-Peter Urbach, Christof Schilz, Thomas Engel, Axel Zibold, Takashi Yasui, Iwao Higashikawa

Proceedings Volume 4889, (2002) https://doi.org/10.1117/12.467353

KEYWORDS: Photomasks, Lithography, Phase shifts, CCD cameras, Vacuum ultraviolet, Binary data, CCD image sensors, Microelectronics, Reticles, Lithographic illumination

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Proceedings Article | 10 June 1996 Paper

Doping and charge-carrier density effects in the cuprate superconductors

David Tanner, Young-Duck Yoon, Axel Zibold, H. Liu, Manuel Quijada, S. Moore, John Graybeal, Beomhoan O, John Markert, Ronald Kelley, Marshall Onellion, J-H. Cho

Proceedings Volume 2696, (1996) https://doi.org/10.1117/12.241744

KEYWORDS: Absorption, Doping, Superconductors, Reflectivity, Oscillators, Transmittance, Dielectrics, Copper, Phonons, Magnetism

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Showing 5 of 28 publications

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