MicroLEDs are projected to have triple-digit growth over the next five years and will have significant benefits for new and existing display applications. MicroLEDs will see high demand in applications such as smartwatches, mobile devices, AR/VR, automotive and TVs. Critical in the manufacturing of these devices is MOCVD epitaxial growth technology. This technology must meet industry’s high-performance requirements, including extremely uniform wavelength, thickness and composition, dopant control and low defectivity while reducing costs via high productivity, high yields and lower operating expenses. These requirements must also be met over the whole wafer as well as across the transfer field. Veeco has developed the Lumina™ As/P MOCVD for Red MicroLEDs that meet and exceed industry’s roadmap on 8” substrates. Details of the technology and data will be discussed as part of this presentation.
In this presentation, we will discuss the requirements for Red microLEDs for advanced displays, the corresponding MOCVD Epitaxy capability needs,and share Veeco’s recent learnings.
Veeco MOCVD solutions are capable of supporting multiple substrates (GaAs, InP, sapphire, Si), and offer seamless transition to larger substrate sizes. For 6” GaAs red micro LED, Lumina® has demonstrated total population wavelength yield of >95% in 3 nm bin with defectivity <0.5 / cm2 @ >2um and 25% higher throughput than other platforms. For 6” sapphire miniLED, EPIK® has demonstrated within wafer wavelength 1sigma uniformity of 0.68nm (blue) / 1.24nm (green). For microLED on 200mm and 300mm silicon, Veeco has developed Propel® single wafer reactor for best in-class uniformity. Details of the technology and current data will be discussed.
We’ve developed a next-generation MOCVD platform for high-performance, commercial VCSEL production. The tool is capable of achieving total population uniformity >95% yield in +/- 3nm bin on 6” GaAs. In addition, the tool is capable to go >300 runs between maintenance while maintaining very fast growth rate up to 4.2micron / hr and low [C] impurity <2E17 cm-3. Another parameter critical to VCSEL is defectivity, where <0.5 defects / cm2 @ >2 micron size have been demonstrated. Correlation of epi and VCSEL device parameters such as threshold current density (Jth) and power conversion efficiency will be discussed.
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