Mr. Bongkwon Son Profile

Bongkwon Son

at Nanyang Technological Univ

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Author

Publications (4)

Proceedings Article | 12 April 2023 Presentation + Paper

Dynamic tuning of WSe2 exciton emission via laser annealing

Yi Yu, John J. Eng, Kunze Lu, Manlin Luo, Bongkwon Son, Pratul Venkatesh, Wen Wei Lee, Yong Hao Tham, Weibo Gao, Donguk Nam

Proceedings Volume 12423, 1242303 (2023) https://doi.org/10.1117/12.2649766

KEYWORDS: Emission wavelengths, Excitons, Monolayers, Annealing, Engineering, 2D materials, Quantum light sources, Photonic integrated circuits, Electron beam lithography, Raman spectroscopy

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Proceedings Article | 17 March 2023 Presentation + Paper

Light emission and engineered carrier lifetime in strained 2D materials towards developing wavelength-tunable integrated emitters

Wen Wei Lee, Yi Yu, Yong Hao Tham, Pratul Venkatesh, Jian Kwang Tan, Bongkwon Son, Manlin Luo, Kunze Lu, Yadong Wang, Donguk Nam

Proceedings Volume 12423, 124230B (2023) https://doi.org/10.1117/12.2650116

KEYWORDS: Monolayers, Quantum emitters, 2D materials, Waveguides, Quantum engineering, Photoluminescence, Emission wavelengths, Engineering, Wavelength tuning, Photoresist materials

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Proceedings Article | 5 March 2022 Presentation + Paper

Tensile-strained direct bandgap GeSnOI micro/nanostructures by harnessing residual strain

Daniel Burt, Hyo-Jun Joo, Youngmin Kim, Yongduck Jung, Melvina Chen, Manlin Luo, Dong-Ho Kang, Simone Assali, Lin Zhang, Bongkwon Son, Weijun Fan, Oussama Moutanabbir, Zoran Ikonic, Chuan Seng Tan, Yi-Chiau Huang, Donguk Nam

Proceedings Volume 12006, 1200605 (2022) https://doi.org/10.1117/12.2608742

KEYWORDS: Tin, Nanowires, Germanium, Raman spectroscopy, Transmission electron microscopy, Silicon, Nanolithography, Luminescence, Laser applications, Semiconductor lasers

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Proceedings Article | 27 February 2019 Paper

Metal-semiconductor-metal photodetectors on a GeSn-on-insulator platform

Bong Kwon Son, Yiding Lin, Wei Li, Kwang Hong Lee, Joe Margetis, David Kohen, John Tolle, Lin Zhang, Tina Guo Xin, Hong Wang, Chuan Seng Tan

Proceedings Volume 10914, 109141A (2019) https://doi.org/10.1117/12.2506355

KEYWORDS: Silicon, Germanium, Photodetectors, Tin, Signal to noise ratio, Absorption, Semiconducting wafers, Raman spectroscopy

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