Mr. Byoung Tak Jeon Profile

Byoung Tak Jeon

Process Engineer at Dongbu HiTek Co Ltd

SPIE Involvement:

Author

Publications (1)

This will count as one of your downloads.

You will have access to both the presentation and article (if available).

DOWNLOAD NOW

This content is available for download via your institution's subscription. To access this item, please sign in to your personal account.

Email or Username Forgot your username?

Password Forgot your password?

Show

Keep me signed in

No SPIE account? Create an account

Proceedings Article | 10 May 2005 Paper

Investigation on the effect of metallic impurity Zn in solvent during photolithography process

Byoung-Tak Jeon, Ook-Hyun Kim, Jeong-Heon Baik, Jeong-Hyuk Ha, Il-Ho Lee, Weon-Sik Yang

Proceedings Volume 5752, (2005) https://doi.org/10.1117/12.598349

KEYWORDS: Zinc, Photoresist materials, Semiconducting wafers, Head-mounted displays, Lithography, Coating, Transition metals, Optical lithography, Spectroscopy, Deep ultraviolet

Read Abstract +

The trend toward narrower line widths in the manufacture of integrated circuits has put an increasing burden on contamination control in every aspect of semiconductor fabrication. For a deep sub micrometer device, metal contamination appearing on the device can cause fatal problems including increasing the leakage current at the p-n junction, decreasing the breakdown voltage of oxide. Many lithographic defects have been known and evaluated, however, the effects of metallic impurity (Zn) in solvent are seldom reported during lithography process. Solvents are component material for Photoresist and have been used for prewet, strippers, EBR, rinse and so on during photolithography process. Lithography plays a very important role because it is applied repeatedly onto the wafer surface during device manufacturing. Unfortunately, pattern lifting happened to well formation layer wafers that were reworked on a normal iline litho process after stripping the Photoresist with solvent (PGMEA). We also detected blocked pattern defect at 0.18 CMOS gate pattern coated with DUV resist applied solvent prewet step after BARC coating. From various investigations, we could know that pattern lifting and blocked defect were derived from solvent (PGMEA). In this paper, we show mechanism of adhesion fails and blocked defect happened by metallic impurity Zn in solvent during solvent rework and prewet on organic BARC film. It shows that proper control of metallic impurities in thinner is an important item in FAB.

My Library

You currently do not have any folders to save your paper to! Create a new folder below.

Folder Name

Folder Description

View contact details

UPDATE YOUR PROFILE

Is this your profile? Update it now.

Sign into your SPIE.org account

Don’t have a profile and want one?

Create an account on SPIE.org

Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks. You are receiving this notice because your organization may not have SPIE eBooks access.*

*Shibboleth/Open Athens users─please sign in to access your institution's subscriptions.

To obtain this item, you may purchase the complete book in print or electronic format on SPIE.org.

ORGANIZATIONAL
Sign in with credentials provided by your organization.

Organizational Username

Organizational Password

Show/Hide Password

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members:

Non-members: ADD TO CART

Keywords/Phrases

Search In:

Publication Years