Dr. Chang-Feng Wan Profile

Dr. Chang-Feng Wan

Scientist/President/Founder at VISM Corp

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Publications (7)

Proceedings Article | 4 May 2010 Paper

High operating temperature MWIR detectors

M. Kinch, H. Schaake, R. Strong, P. Liao, M. Ohlson, J. Jacques, C.-F. Wan, D. Chandra, R. Burford, C. Schaake

Proceedings Volume 7660, 76602V (2010) https://doi.org/10.1117/12.850965

KEYWORDS: Diodes, Mercury cadmium telluride, Mid-IR, Doping, Staring arrays, Metals, Copper, Photodiodes, Diffusion, Semiconductors

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Proceedings Article | 23 January 2010 Paper

High operating temperature MWIR detectors

H. Schaake, M. Kinch, D. Chandra, P. K. Liao, D. Weirauch, C.-F. Wan, H. D. Shih

Proceedings Volume 7608, 76081O (2010) https://doi.org/10.1117/12.846254

KEYWORDS: Diodes, Arsenic, Sensors, Mercury cadmium telluride, Metals, Interfaces, Doping, Mercury, Readout integrated circuits, Liquid phase epitaxy

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Proceedings Article | 7 May 2009 Paper

Performance and modeling of the MWIR HgCdTe electron avalanche photodiode

Jeffrey Beck, Richard Scritchfield, Billy Sullivan, Jamie Teherani, Chang-Feng Wan, Mike Kinch, Martha Ohlson, Mark Skokan, Lewis Wood, Pradip Mitra, Mike Goodwin, Jim Robinson

Proceedings Volume 7298, 729838 (2009) https://doi.org/10.1117/12.819045

KEYWORDS: Avalanche photodetectors, Diodes, Diffusion, Mid-IR, Point spread functions, Capacitance, Mercury cadmium telluride, Performance modeling, Signal to noise ratio, Absorption

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Proceedings Article | 14 May 2007 Paper

Recent development of ultra small pixel uncooled focal plane arrays at DRS

Chuan Li, George Skidmore, Christopher Howard, C. Han, Lewis Wood, Doug Peysha, Eric Williams, Carlos Trujillo, Jeff Emmett, Gary Robas, Daniel Jardine, C.-F. Wan, Elwood Clarke

Proceedings Volume 6542, 65421Y (2007) https://doi.org/10.1117/12.720267

KEYWORDS: Staring arrays, Long wavelength infrared, Sensors, Data modeling, Microbolometers, Readout integrated circuits, Absorption, Imaging systems, Thermography, Resistance

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Proceedings Article | 22 October 2004 Paper

The HgCdTe electron avalanche photodiode

Jeffrey Beck, Chang-Feng Wan, Michael Kinch, James Robinson, Pradip Mitra, Richard Scritchfield, Feng Ma, Joe Campbell

Proceedings Volume 5564, (2004) https://doi.org/10.1117/12.565142

KEYWORDS: Mercury cadmium telluride, Avalanche photodetectors, Mid-IR, Avalanche photodiodes, Short wave infrared radiation, Diodes, Ionization, Long wavelength infrared, Sensors, Monte Carlo methods

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Proceedings Article | 10 October 2003 Paper

HgCdTe HDVIP detectors and FPAs for strategic applications

Arvind D'Souza, Maryn Stapelbroek, E. Bryan, Alexander Vinson, Jeffrey Beck, Michael Kinch, Chang-Feng Wan, James Robinson

Proceedings Volume 5074, (2003) https://doi.org/10.1117/12.487313

KEYWORDS: Sensors, Diodes, Diffusion, Mercury cadmium telluride, Temperature metrology, Mid-IR, Photodiodes, Staring arrays, Sensor performance, Information operations

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Detector characteristics of Cu- and Au-doped High Density Vertically Integrated Photodiode (HDVIP) detectors as well as Cu-doped HDVIP Focal Plane Arrays (FPAs) are presented in this paper. Individual photodiodes in test bars were examined by measuring I-V curves and the associated resistance-area (RA) product as a function of temperature. The Au-doped MWIR [λ_c(78 K) = 5 μm] HDVIP detectors RoA performance was within a factor of two or three of theoretical. Noise as a function of frequency has been measured on Au-doped MWIR HgCdTe HDVIP diodes at several temperatures under dark and illuminated conditions. Low-frequency noise performance of the Au-doped MWIR diode in the various environments is characterized by the ratio α of the noise current spectral density at 1 Hz to the value of the diode current. For photocurrent at 140 K, α_PHOTO = 1.8 x 10^-5. The value of α_PHOTO is the same at both zero bias and 100 mV reverse bias. At 160 K, α_PHOTO is slightly lower but still in the low 10^-5 range. Excess low-frequency noise measured at 140 K and 100 mV reverse bias in the dark has α_DARK = 1.4 x 10^-5. At 160 K and 100 mV reverse bias, α_DARK is in the mid 10^-5 range. At 140 K,the dark current at 8.2 V reverse bias was equal to the photocurrent at 100 mV reverse bias and close to the photocurrent at zero bias. α_DARK = 1.85 x 10^-3 at -8.2 V. This ratio is two orders of magnitude greater than α_PHOTO. At 8.2 V reverse bias, the current was amplified by avalanche processes. Similar results were obtained on the Au-doped diode at 160 K. Diffusion current dominates dark current at 100 mV reverse bias at T = 185 K and T = 220 K. The ratio, α_DARK approximately α_PHOTO in the low to mid 10^-5 range, i.e. dark diffusion current generates excess low frequency noise in the same manner as photocurrent. In addition, 256 x 256 Cu-doped detector arrays were fabricated. Initial measurements had seven out of ten FPAs having operabilities greater than 99.45% with the best 256 x 256 array having only two inoperable pixels.

Proceedings Article | 12 November 2001 Paper

MWIR HgCdTe avalanche photodiodes

Jeffrey Beck, Chang-Feng Wan, Michael Kinch, James Robinson

Proceedings Volume 4454, (2001) https://doi.org/10.1117/12.448174

KEYWORDS: Avalanche photodetectors, Diodes, Mercury cadmium telluride, Mid-IR, Ionization, Measurement devices, Avalanche photodiodes, Performance modeling, Diffusion, Photodiodes

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