Dr. Chang-Nam Ahn Profile

Dr. Chang-Nam Ahn

Imaging Scientist at ASML Korea Co Ltd

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Author

Publications (29)

Proceedings Article | 22 February 2021 Presentation + Paper

Optical design of EUV attenuated PSM for contact-hole applications

Chang-Nam Ahn, Dong-Seok Nam, Nakgeuon Seong, Anthony Yen

Proceedings Volume 11609, 116090D (2021) https://doi.org/10.1117/12.2583462

KEYWORDS: Reflectivity, Extreme ultraviolet, Photomasks, Optical design, Manufacturing, Ruthenium, Printing, Etching, Nanoimprint lithography, Absorption

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Proceedings Article | 2 May 2018 Presentation + Paper

Illumination source optimization in EUV lithography for staggered contact holes and pillars for DRAM applications

Jo Finders, Ziyang Wang, John McNamara, Gijsbert Rispens, Pär Broman, Chang-Nam Ahn, Inhwan Lee, Hwan Kim, Junghyun Kang, Yoonsuk Hyun, Chang-Moon Lim

Proceedings Volume 10583, 105830Y (2018) https://doi.org/10.1117/12.2299598

KEYWORDS: Nanoimprint lithography, Lithographic illumination, Photomasks, Fiber optic illuminators, Diffraction, Extreme ultraviolet lithography, Reticles, Printing, Semiconducting wafers, Optical lithography

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Proceedings Article | 1 May 2018 Presentation + Paper

EUV contact-hole local CD uniformity optimization for DRAM storage node application

Mijung Lim, Chang-Moon Lim, Chang-Nam Ahn, Daniel Park, Anita Fumar-Pici, Nak Seong

Proceedings Volume 10583, 105830X (2018) https://doi.org/10.1117/12.2299322

KEYWORDS: Photomasks, Semiconducting wafers, Critical dimension metrology, Extreme ultraviolet, Stochastic processes, Diffraction, Compact discs, Diffraction gratings, Cadmium, Lithographic illumination

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Proceedings Article | 7 April 2015 Paper

Understanding of stochastic noise

Seo-Min Kim, Chang-Moon Lim, Mi-Rim Jung, Young-Sik Kim, Won-Taik Kwon, Chang-Nam Ahn, Kyu-Tae Sun, Anita Fumar-Pici, Alek Chen

Proceedings Volume 9422, 94220M (2015) https://doi.org/10.1117/12.2087559

KEYWORDS: Stochastic processes, Photomasks, Absorption, Critical dimension metrology, Extreme ultraviolet, Immersion lithography, Lithography, Photoresist processing, Line width roughness, Particles

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Proceedings Article | 17 April 2014 Paper

EUV stochastic noise analysis and LCDU mitigation by etching on dense contact-hole array patterns

Seo Min Kim, Sunyoung Koo, Jun-Taek Park, Chang-Moon Lim, Myoungsoo Kim, Chang-Nam Ahn, Anita Fumar-Pici, Alek Chen

Proceedings Volume 9048, 90480A (2014) https://doi.org/10.1117/12.2048282

KEYWORDS: Etching, Liquid phase epitaxy, Stochastic processes, Photomasks, Metrology, Critical dimension metrology, Printing, Scanning electron microscopy, Extreme ultraviolet, Error analysis

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Proceedings Article | 8 November 2005 Paper

Characteristics of RIE lag and pattern density effect in alternating aperture phase-shift masks

Byung-Soo Chang, Yoon-Young Chang, Hyun-Suk Bang, In-Soo Lee, Lee-Ju Kim, Chang-Nam Ahn, Hong-Suk Kim

Proceedings Volume 5992, 59923Q (2005) https://doi.org/10.1117/12.632022

KEYWORDS: Etching, Reactive ion etching, Quartz, Critical dimension metrology, Ions, Photomasks, Diffractive optical elements, Plasma, Atomic force microscopy, Phase shifts

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Proceedings Article | 20 August 2004 Paper

Investigations on microloading effect: a parallel approach to PGSD (proximity gap suction development)

Daniel Courboin, Jong Woo Choi, S. Jung, Seung Hee Baek, Lee-Ju Kim, Chang Nam Ahn, Hong-Seok Kim

Proceedings Volume 5446, (2004) https://doi.org/10.1117/12.557708

KEYWORDS: Critical dimension metrology, Standards development, Photomasks, Lithography, Semiconducting wafers, Diffractive optical elements, Photoresist processing, Acoustics, Temperature metrology, Physics

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Proceedings Article | 28 August 2003 Paper

Negative chemically amplified resist in making mask for a logic device with high pattern density

Kyung-Han Nam, Hyun-Joon Cho, Seung Hee Baek, Seong-Ho Jeong, Chang-Nam Ahn, Hong-Seok Kim

Proceedings Volume 5130, (2003) https://doi.org/10.1117/12.504188

KEYWORDS: Photomasks, Etching, Logic devices, Line edge roughness, Mask making, Scanning electron microscopy, Photoresist processing, Resistance, Critical dimension metrology, Dry etching

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Proceedings Article | 28 August 2003 Paper

Investigation on micro-trench formation of alternating aperture phase shift masks

Sung-Won Kwon, Heong-Sup Jeong, Lee-Ju Kim, Chang-Nam Ahn, Hong-Seok Kim

Proceedings Volume 5130, (2003) https://doi.org/10.1117/12.504175

KEYWORDS: Etching, Photomasks, Quartz, Fluorine, Surface roughness, Scanning electron microscopy, Ions, Atomic force microscopy, Phase shifts, Plasma systems

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Proceedings Article | 30 July 2002 Paper

Intrafield CD variation by stray light from neighboring field

Chang-Moon Lim, Jung-Ho Song, Sung-Soo Woo, Ki-Sung Kwon, Chang-Nam Ahn, Ki-Soo Shin

Proceedings Volume 4691, (2002) https://doi.org/10.1117/12.474525

KEYWORDS: Stray light, Critical dimension metrology, Photomasks, Scanners, Light scattering, Optical lithography, Lithographic illumination, Semiconducting wafers, Binary data, Chromium

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Proceedings Article | 30 July 2002 Paper

Limitation of optical lithography for various resolution enhancement technologies

Tae-Seung Eom, Chang-Nam Ahn, Dong-Heok Park, Cha-Won Koh, Cheol-Kyu Bok

Proceedings Volume 4691, (2002) https://doi.org/10.1117/12.474545

KEYWORDS: Lithographic illumination, Optical lithography, Diffusion, Lithography, Photomasks, Resolution enhancement technologies, Electroluminescence, Optical proximity correction, Critical dimension metrology, Image processing

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Proceedings Article | 30 July 2002 Paper

0.33-k1 ArF lithography for 100-nm DRAM

Cheol-Kyu Bok, Seok-Kyun Kim, Hee-Bom Kim, Jin-Sung Oh, Chang-Nam Ahn, Ki-Soo Shin

Proceedings Volume 4691, (2002) https://doi.org/10.1117/12.474631

KEYWORDS: Lithography, Photomasks, Photoresist processing, Lithographic illumination, Optical proximity correction, Etching, Scanners, Scanning electron microscopy, Resistance, Optical lithography

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Proceedings Article | 30 July 2002 Paper

Double-exposure strategy using OPC and simulation and the performance on wafer with sub-0.10-um design rule in ArF lithography

Se-Young Oh, Wan-Ho Kim, Hyoung-Soon Yune, Hee-Bom Kim, Seo-Min Kim, Chang-Nam Ahn, Ki-Soo Shin

Proceedings Volume 4691, (2002) https://doi.org/10.1117/12.474541

KEYWORDS: Optical proximity correction, Lithography, Semiconducting wafers, Double patterning technology, Optical lithography, Reticles, Device simulation, Electroluminescence, Image processing, Lithographic illumination

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As the pattern size becomes smaller, double or multi exposure is required unless the epochal solutions for overcoming the limits of present lithography system do appear or are discovered. ArF DET (double exposure technology) strategy based on manual OPC with in-house simulation tool, HOST (Hynix OPC simulation tool), is suggested as a possible exposure method to extend the limitation of current lithography. HOST requires no additional procedures and separate layout optimizations of each region in terms of OPC are enough. Furthermore, it is possible to change illumination condition of each region and the overlap between two regions with ease. The results from the simulation are pattern size and profile of each condition according to the defous and misregistration. 0.63 NA ArF Scanner and Clariant resist is used for wafer process. The resist was coated on Clariant organic BARC using 0.24 um thickness. Dipole illumination for cell region and annular illumination for peripheral region are used. Cell region contains 0.20 um pitch duty pattern and peripheral region 0.24 um pitch duty pattern. The boundary of two regions is investigated in view of validity of stitching itself. The layout of reticles used as the cell and peripheral region are optimized by OPC, respectively and then, additional OPC was treated to the boundary, i.e., stitching area to compensate the cross term of the boundary caused by separate and independent optimization with OPC in the cell and the peripheral regime. The final patterns were acquired by defining the cell at first and the peripheral region secondly with different defocus and registration in respect to the cell. The actual data on wafer are presented according to defocus and one region's overlay offset relatively to the other region. And the outstanding matching between simulation results and in-line data are shown. Lithography process window for stable patterning is thoroughly investigated in view of depth of focus, energy latitude, registration between two stitched regions and stitching itself in the boundary. It is found from the experiment that total DOF of DE (double exposure) is 0.5 um and the total EL of DE is 10.0% in this paper. At present, it is very difficult to ensure stable process margin for the sub-0.10 um patterning. But there is a promising technology called stitching with special optimization. In addition, this technology will be nominated as an eternal candidate process whenever our lithography is in the adversity at the limits of his days.

Proceedings Article | 30 July 2002 Paper

Optical lithography simulation considering impact of mask errors

Hee-Bom Kim, Won-Kwang Ma, Chang-Nam Ahn, Ki-Soo Shin

Proceedings Volume 4691, (2002) https://doi.org/10.1117/12.474508

KEYWORDS: Photomasks, Optical proximity correction, Optical lithography, Semiconducting wafers, Image processing, Solid modeling, Scanning electron microscopy, Mask making, Point spread functions, Optical simulations

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Proceedings Article | 14 September 2001 Paper

Feasibility study on the ArF attenuated phase-shift mask for 100-nm node lithography

Sang-Sool Koo, Sang-Jin Kim, Seung-Weon Paek, Chang-Nam Ahn, Young-Mog Ham, Ki-Soo Shin

Proceedings Volume 4346, (2001) https://doi.org/10.1117/12.435776

KEYWORDS: Lithography, Photomasks, Electroluminescence, Optical lithography, Critical dimension metrology, Semiconducting wafers, Printing, Photoresist processing, Scanning electron microscopy, Photomicroscopy

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Proceedings Article | 14 September 2001 Paper

Application of full-chip level optical proximity correction to memory device with sub-0.10-um design rule and ArF lithography

Hyoung-Soon Yune, Hee-Bom Kim, Wan-Ho Kim, Chang-Nam Ahn, Young-Mog Ham, Ki-Soo Shin

Proceedings Volume 4346, (2001) https://doi.org/10.1117/12.435724

KEYWORDS: Optical proximity correction, Photomasks, Lithography, Semiconducting wafers, Critical dimension metrology, Model-based design, Data modeling, Reticles, Process modeling, Image processing

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Recently, the miniaturization of the design rule pushes the pattern sizes in the peripheral region as well as cell region to the resolution limit of exposure tools. Therefore it is necessary to apply optical proximity correction (OPC) not only to the patterns in cell region but also to those in peripheral region. It is impossible to apply manual OPC method in peripheral region. Because the peripheral region is composed of random patterns with large data volume, and it takes too long execution time with manual OPC. For random pattern OPC in peripheral region, automatic OPC tool is required. Now for the automatic OPC tool, model-based and rule-based methods are developed for the commercial use. In this paper, the effectively applicable process is discussed using model-based method in automatic OPC at the sub-0.10 micrometer design rule in ArF lithography. For the application of automatic OPC tool at the design rule of sub-0.10 micrometer and ArF process in memory devices the following problem should be cleared. In small size of design rule, we should consider not only pattern fidelity but also process margin such as depth of focus (DOF) and exposure latitude (EL) at the cell OPC. But automatic OPC tool is insufficient to be applied for cell region OPC, because it considers not process margin but pattern fidelity and it has low accuracy using much approximation model to reduce layout correction time. To solve this problem, we suggest a full chip OPC process using both automatic OPC tool and the manual OPC method using the novel lithography simulation model (Diffused Aerial Image Model, DAIM). DAIM is available to predict wafer pattern and process margin of cell, its accuracy is verified in ArF process as in KrF process. We could see small standard deviation error between experiment and DAIM in ArF process using various line or space patterns, which is about 9 nm at binary intensity mask (BIM). So the manual OPC with DAIM resulted in the wide process margin and good pattern fidelity overcoming the limitation of automatic OPC tool. However it is necessary to correlate energy level of DAIM for cell region OPC with that of the model in the automatic OPC tool for peripheral region OPC, because cell and peripheral region are exposed with the same exposure dose in stepper or scanner. In case of ArF process, we could see the small difference of energy level and standard deviation error, which is about 1.4%, 2 nm at BIM and 6.3%, 3 nm at half-tone phase shift mask (PSM), between DAIM and automatic OPC tool. As the result of using DAIM and automatic OPC tool simultaneously at full chip OPC, we could see improved results from cell to peripheral region at the sub-0.10 micrometer design rule in ArF lithography.

Proceedings Article | 5 September 2001 Paper

Quantitative analysis of mask error effect on wafer CD variation in ArF lithography

Sang-Jin Kim, Sang-Sool Koo, Seo-Min Kim, Chang-Nam Ahn, Young-Mog Ham, Ki-Soo Shin

Proceedings Volume 4409, (2001) https://doi.org/10.1117/12.438344

KEYWORDS: Critical dimension metrology, Semiconducting wafers, Photomasks, Error analysis, Lithography, Tolerancing, Photoresist processing, Quantitative analysis, Semiconductors, Phase shifting

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Proceedings Article | 22 January 2001 Paper

Potentialities of sub-100-nm optical lithography of alternating and phase-edge phase-shift mask for ArF lithography

Sang-Sool Koo, Hee-Bom Kim, Hyoung-Soon Yune, Jee-Suk Hong, Seung-Weon Paek, Tae-Seung Eom, Chang-Nam Ahn, Young-Mog Ham, Ki-Ho Baik, Kyu-Yong Lee, Lee-Ju Kim, Hong-Seok Kim

Proceedings Volume 4186, (2001) https://doi.org/10.1117/12.410711

KEYWORDS: Lithography, Photomasks, Critical dimension metrology, Phase shifts, Electroluminescence, Optical lithography, Chromium, Etching, Mask making, Scanning electron microscopy

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Proceedings Article | 19 July 2000 Paper

Mask critical dimension error on optical lithography

Tae-Seung Eom, Sang-Sool Koo, Seung-Weon Paek, Hee-Bom Kim, Chang-Nam Ahn, Ki-Ho Baik

Proceedings Volume 4066, (2000) https://doi.org/10.1117/12.392047

KEYWORDS: Photomasks, Optical lithography, Diffusion, Critical dimension metrology, Lithography, Transmittance, Semiconducting wafers, Lithographic illumination, Phase shifts, Image processing

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Proceedings Article | 5 July 2000 Paper

Exposure latitude analysis for dense line and space patterns by using diffused aerial image model

Chang-Nam Ahn, Hee-Bom Kim, Ki-Ho Baik

Proceedings Volume 4000, (2000) https://doi.org/10.1117/12.389058

KEYWORDS: Diffusion, Photomasks, Semiconducting wafers, Lithography, Critical dimension metrology, Image processing, Electroluminescence, Diffraction, Electron beam lithography, Optical lithography

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Proceedings Article | 5 July 2000 Paper

Accuracy of diffused aerial image model for full-chip-level optical proximity correction

Jee-Suk Hong, Hee-Bom Kim, Hyoung-Soon Yune, Chang-Nam Ahn, Young-Mo Koo, Ki-Ho Baik

Proceedings Volume 4000, (2000) https://doi.org/10.1117/12.388936

KEYWORDS: Optical proximity correction, Photoresist processing, Lithography, Diffusion, Critical dimension metrology, Image processing, Photomasks, Cadmium, Error analysis, Deep ultraviolet

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Proceedings Article | 5 July 2000 Paper

Validation of repair process for DUV attenuated phase-shift mask

Seung-Weon Paek, Hee-Bom Kim, Chang-Nam Ahn, Young-Mo Koo, Ki-Ho Baik

Proceedings Volume 4000, (2000) https://doi.org/10.1117/12.389051

KEYWORDS: Photomasks, Semiconducting wafers, Deep ultraviolet, Lithography, Data modeling, Control systems, Binary data, Tolerancing, Opacity, Reliability

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Proceedings Article | 26 July 1999 Paper

Reduction of isolated-dense bias by optimization off-axis illumination for 150-nm lithography using KrF

Seok-Kyun Kim, Chang-Nam Ahn, Seo-Min Kim, Young-Mog Ham, Ki-Ho Baik

Proceedings Volume 3679, (1999) https://doi.org/10.1117/12.354384

KEYWORDS: Lithography, Lithographic illumination, Optical proximity correction, Diffraction, Photomasks, Optical lithography, Semiconductors, Phase shifts, Electronics, Phase shifting

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Proceedings Article | 29 June 1998 Paper

Novel approximate model for resist process

Chang-Nam Ahn, Hee-Bom Kim, Ki-Ho Baik

Proceedings Volume 3334, (1998) https://doi.org/10.1117/12.310808

KEYWORDS: Image processing, Photoresist processing, Diffusion, Photomasks, Optical proximity correction, Optical lithography, Process modeling, Optical components, Image analysis, Chemical elements

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Proceedings Article | 27 December 1996 Paper

Application of deep-UV attenuated PSM to 0.2-um contact hole patterning technology

Il-Ho Lee, Seo-Min Kim, Chang-Nam Ahn, Ki-Ho Baik

Proceedings Volume 2884, (1996) https://doi.org/10.1117/12.262823

KEYWORDS: Deep ultraviolet, Photomasks, Semiconducting wafers, Transmittance, Printing, Scanning electron microscopy, Optical lithography, Lithography, Reticles, Laser systems engineering

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Proceedings Article | 7 June 1996 Paper

Practical implementation of alternating PSM to memory device of sub-0.25-um technology

Chang-Nam Ahn, Hung-Eil Kim, Hee-Bom Kim, Ki-Ho Baik

Proceedings Volume 2726, (1996) https://doi.org/10.1117/12.240916

KEYWORDS: Photomasks, Semiconducting wafers, Phase shifts, Quartz, Deep ultraviolet, Lithography, Critical dimension metrology, Light scattering, Printing, Scanning electron microscopy

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Proceedings Article | 8 December 1995 Paper

Application of alternating PSM to sub-quarter-micrometer technology using i-line lithography

Hung-Eil Kim, Chang-Nam Ahn, KeunYoung Kim, Ki-Ho Baik

Proceedings Volume 2621, (1995) https://doi.org/10.1117/12.228197

KEYWORDS: Photomasks, Semiconducting wafers, Scanning electron microscopy, Phase shifts, Photomicroscopy, Printing, Lithography, Reticles, Critical dimension metrology, Quartz

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Proceedings Article | 26 May 1995 Paper

Study of optical proximity effects using off-axis illumination with attenuated phase shift mask

Chang-Nam Ahn, Ki-Ho Baik, Yong-Suk Lee, Hung-Eil Kim, Ikboum Hur, YoungSik Kim, Ju-Hwan Kim, Soo-Han Choi

Proceedings Volume 2440, (1995) https://doi.org/10.1117/12.209254

KEYWORDS: Transmittance, Photomasks, Phase shifts, Lithography, Super resolution, Critical dimension metrology, Photoresist processing, Semiconducting wafers, Scanning electron microscopy, Optical lithography

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Proceedings Article | 26 May 1995 Paper

Effect of pattern density for contact windows in an attenuated phase shift mask

Ikboum Hur, Ju-Hwan Kim, Il-Ho Lee, Hung-Eil Kim, Chang-Nam Ahn, Ki-Ho Baik, Soo-Han Choi

Proceedings Volume 2440, (1995) https://doi.org/10.1117/12.209260

KEYWORDS: Transmittance, Lithography, Photomasks, Phase shifts, Semiconducting wafers, Scanning electron microscopy, Photomicroscopy, Phase shifting, Optical lithography, Mask making

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Showing 5 of 29 publications

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