We present a computational study on the anisotropic luminescence and the efficiency of a core-shell type nanowire
LED based on GaN with InGaN active quantum wells. The physical simulator used for analyzing this device
integrates a multidimensional drift-diffusion transport solver and a k · p Schr¨odinger problem solver for quantization
effects and luminescence. The solution of both problems is coupled to achieve self-consistency. Using this
solver we investigate the effect of dimensions, design of quantum wells, and current injection on the efficiency and
luminescence of the core-shell nanowire LED. The anisotropy of the luminescence and re-absorption is analyzed
with respect to the external efficiency of the LED. From the results we derive strategies for design optimization.
Nano Imprint Lithography (NIL) is a promising technology that combines low costs with high throughput for
fabrication of sub 100 nm scale features. One of the first application areas in which NIL is used is manufacturing
of various types of LED's. The wafers used for producing LED's are typically III/V semiconductor materials
grown with epitaxial processes. These types of substrates suffer from growth defects like hexagonal spikes, vpits,
waferbowing, atomic steps and surface corrugations on a scale of few 10 μm or even large islands of
irregularities. The mentioned irregularities are particularly disturbing when NIL based processes are utilized to
create patterns onto the wafer surface. The nanopatterns created by NIL can be applied to control metal organic
vapour phase epitaxy (MOVPE) growth of GaN nanorods. This paper will show that NIL is an excellent
technology to produce nanopatterned GaN substrates highly suitable to grow defect free arrays of positioncontrolled
nanorods for ultrahigh brightness LED applications.
We present a systematic analysis of the optical properties of GaN nanorods (NRs) for the application in Light Emitting
Diodes (LEDs). Our focus is on NR emitters incorporating active layers in the form of quantum-disc or core-shell
geometries. We concentrate on the properties of individual NRs, neglecting any coupling with neighbouring NRs or
ensemble effects. The distribution of power among guided and radiative modes as well as Purcell enhancement is
discussed in detail in the context of different NR geometries, materials and the presence of interfaces.
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