Lynred is leading the development of infrared detectors for high performances applications. Two trends are identified in the infrared range, the increase of the operating temperature and the pixel pitch reduction. For 15 years, the III-V technologies present an increasing interest to address both challenges. At LYNRED, these technologies allow to address Short Wave InfraRed (SWIR) and Mid-Wave InfraRed (MWIR) for ground applications. Many challenges have to be addressed for the future focal plane arrays (FPAs). Electrical and optical crosstalks as well as image quality and stability, are one of the prime concern for detectors with pixel pitch down to 7.5μm. In order to reach an industrial production level of infrared FPAs, technological developments are required at each steps: the epitaxy, the detector array process, flip chip and back end processing. Another key element is the Read Out Integrated Circuit (ROIC) designed in-house to fulfil our customer needs.
We review the latest developments at LYNRED on III-V technologies, in terms of operability, residual fixed pattern noise (RFPN) and Modulation Transfer Function (MTF) optimizations.
Monolithic integration of InAs/InAsSb type-II superlattice (T2SL) photodetector on large-scale Si wafers would allow the development of a low-cost, high-quality, Si-readout integrated circuit compatibility focal plane array (FPA). In this study, we compare the performances of MWIR InAs/InAsSb T2SL samples grown on Si and GaSb substrates. The material quality is investigated with High-Resolution X-ray Diffraction, Atomic Force Microscopy, and Photoluminescence (PL). A minority carrier lifetime of 800 ns at 150 K is extracted from time-resolved PL on the sample grown on GaSb/Si templates with dislocation filtering layers. The device performances will be reported at the conference.
Absolute Quantum Efficiency (QE) measurements are very demanding. To measure the QE of detectors from 0.8μm to 12.5μm a dedicated test bench has been built. The Quantix test bench relies on an optical design ensuring a uniform flat-field illumination of the detector. The illumination uniformity was measured with photodiodes built and calibrated at CEA/LETI. While performing QE measurements, the calibrated photodiode is placed in the vicinity of the detector to measure the incident flux. The Quantix test bench has been validated with a detector whose QE has been measured at the European Space Agency. In this paper, the test bench will be described in details and QE measurements performed on near infrared, MCT-based detectors will be presented. The intra-pixel response is also an important parameter to know as it can affect the accuracy of photometric and shape measurements. The Intrapix test bench has been specifically designed for this measurement, using the Talbot effect to simultaneously measure the intra-pixel response in a large number of subareas of a given detector, from 0.5 μm to 12 μm. The paper will give a brief status of the test bench development.
We present a new development for the measurement of the Quantum Efficiency (QE) of a Mercury Cadmium Telluride (HgCdTe or MCT) detector array in the long wave infrared (LWIR) spectral band. To measure the incident photon flux on the detector, CEA-LETI has designed and produced a calibrated MCT photodiode which, under the test setup conditions used for the QE measurement, delivers a total (dark plus photonic) current of 1nA at 60K. The readout of such a low level of current makes a standard room temperature amplifier inconvenient due to the length of the wires between the focal plane (FP) at cold and the outside of the cryostat (>2m in the current cryostat). A much better approach is to use High Electron Mobility Transistors (Cryo-HEMTs), optimized by CNRS/C2N laboratory for ultra-low noise at very low temperatures (<1K). We have developed a Cryo-HEMT-based transimpedance amplifier to readout the photonic current of the calibrated MCT chip. The paper describes the calibrated photodiode, the Cryo-HEMT amplifier and the test setup, and shows the results of the QE measurements of the LWIR detector.
We report on the development of short wave infrared (SWIR) imaging arrays for astronomy and space observation in Europe. LETI and Sofradir demonstrated 640×480 SWIR HgCdTe (MCT) arrays geared at low flux, low dark noise operation. Currently, we are developing 2048×2048 arrays mated to a newly developed ROIC. In parallel, the European Space Agency and the European Commission are funding the development and industrialization of 4" CdZnTe substrates and HgCdTe epitaxy. These large wafers are needed to achieve the necessary economies of scale and address the need for even larger arrays. HgCdTe SWIR detector performance at LETI/Sofradir is known from previous programs and will be discussed here. However, we will only be able to summarize the features and specifications of the new 2048×2048 detectors which are still at a prototype stage.
Detection for space application is very demanding on the IR detector: all wavelengths, from visible-NIR (2- 3um cutoff) to LWIR (10-12.5um cutoff), even sometimes VLWIR (15um cutoff) may be of interest. Moreover, various scenarii are usually considered. Some are imaging applications where the focal plane array (FPA) is used as an optical element to sense an image. However, the FPA may also be used in spectrometric applications where light is triggered on the different pixels depending on its wavelength. In some cases, star pointing is another use of FPAs where the retina is used to sense the position of the satellite.
In all those configurations, we might distinguish several categories of applications:
• low flux applications where the FPA is staring at space and the detection occurs with only a few number of photons.
• high flux applications where the FPA is usually staring at the earth. In this case, the black body emission of the earth and its atmosphere ensures usually a large number of photons to perform the detection.
Those two different categories are highly dimensioning for the detector as it usually determines the level of dark current and quantum efficiency (QE) requirements. Indeed, high detection performance usually requires a large number of integrated photons such that high QE is needed for low flux applications, in order to limit the integration time as much as possible. Moreover, dark current requirement is also directly linked to the expected incoming flux, in order to limit as much as possible the SNR degradation due to dark charges vs photocharges. Note that in most cases, this dark current is highly depending on operating temperature which dominates detector consumption. A classical way to mitigate dark current is to cool down the detector to very low temperatures.
This paper won't discuss the need for wavefront sensing where the number of detected photons is low because of a very narrow integration window. Rigorously, this kind of configuration is a low flux application but the need for speed distinguishes it from other low flux applications as it usually requires a different ROIC architecture and a photodiode optimized for high response speed.
Infrared detection is widely used in astrophysics and plays a key role in several space missions aiming for example at scanning the sky to discover new objects (coolest stars, dust-obscured galaxies, exo-planets …) or studying the evolution of the universe, where light is redshifted in the infrared range. In many cases the space telescope involves an HgCdTe infrared detector operating at low frame rate over long integration time. Due to the very low input signal, dark current and readout noise are essential figures that must be minimized to get the best detector sensitivity. This kind of application also requires very large focal plane array (FPA) often relying on a butting arrangement of large detectors. The trend is to increase the single detector format from 1Kx1K to 2Kx2K and 4Kx4K. For very large formats, material quality and detector process may affect the production yield and the global infrared FPA cost. As a result the detector format could result from a trade-off taking into account producibility.
The Laboratoire Electronique et Traitement de l’Information (LETI) of the Commissariat à l’Energie Atomique (CEA, Grenoble, France) has been involved in the development of infrared detectors based on HgCdTe (MCT) material for over 30 years, mainly for defence and security programs [1]. Once the building blocks are developed at LETI (MCT material process, diode technology, hybridization, …), the industrialization is performed at SOFRADIR (also in Grenoble, France) which also has its own R&D program [2].
In past years, LETI also developed infrared detectors for space astrophysics in the mid infrared range – the long wave detector of the ISOCAM camera onboard ISO – as well as in the far infrared range – the bolometer arrays of the Herschel/PACS photometer unit –, both instruments which were under the responsibility of the Astrophysics department of CEA (IRFU/SAp, Saclay, France).
Nowadays, the infrared detectors used in space and ground based astronomical instruments all come from vendors in the US. For programmatic reasons – increase the number of available vendors, decrease the cost, mitigate possible export regulations, …– as well as political ones – spend european money in Europe –, the European Space Agency (ESA) defined two roadmaps (one in the NIR-SWIR range, one in the MWIR-LWIR range) that will eventually allow for the procurement of infrared detectors for space astrophysics within Europe.
The French Space Agency (CNES) also started the same sort of roadmaps, as part of its contribution to the different space missions which involve delivery of instruments by French laboratories. It is important to note that some of the developments foreseen in these roadmaps also apply to Earth Observations.
One of the main goal of the ESA and CNES roadmaps is to reduce the level of dark current in MCT devices at all wavelengths. The objective is to use the detectors at the highest temperature where the noise induced by the dark current stays compatible with the photon noise, as the detector operating temperature has a very strong impact at system level. A consequence of reaching low levels of dark current is the need for very low noise readout circuits.
CEA and SOFRADIR are involved in a number of activities that have already started in this framework. CEA/LETI does the development of the photo-voltaic (PV) layers – MCT material growth, diode technologies–, as well as some electro-optical characterisation at wafer, diode and hybrid component levels, and CEA/IRFU/SAp does all the electro-optical characterisation involving very low flux measurements (mostly dark current measurements). Depending of the program, SOFRADIR can also participate in the development of the hybrid components, for instance the very low noise readout circuits (ROIC) can be developed either at SOFRADIR or at CEA/LETI.
Depending of the component specifications, the MCT epitaxy can be either liquid phase (LPE, which is the standard at SOFRADIR for production purposes) or molecular beam (MBE), the diode technology can be n/p (standard at LETI and SOFRADIR) or p/n (under development for several years now) [3], and the input stage of the ROIC can be Source Follower per Detector (SFD for very low flux low noise programs) or Capacitive Trans Impedance Amplifier (CTIA for intermediate flux programs) [4].
This paper will present the different developments and results obtained so far in the two NIR-SWIR and MWIR-LWIR spectral ranges, as well as the perspectives for the near future. CEA/LETI is also involved in the development of MCT Avalanche Photo Diodes (APD) that will be discussed in other papers [5,6].
HgCdTe is very unique material system for infrared (IR) detection. In combination with its lattice matched native substrate CdZnTe, this semiconductor alloy allows to address the whole infrared (IR) band, from the near IR (NIR, 2?m cutoff) to the middle wave IR (MWIR, 5μm cutoff), the long wave IR (LWIR, 10μm cutoff), up to the very long wave IR (VLWIR, cutoffs larger than 14μm).
Space applications are requiring low dark current in the long wave infrared at low operating temperature for low flux observation. The applications envisioned with this type of specification are namely scientific and planetary missions. Within the framework of the joint laboratory between Sofradir and the CEA-LETI, a specific development of a TV format focal plane array with a cut-off wavelength of 12.5μm at 40K has been carried out. For this application, the p on n technology has been used. It is based on an In doped HgCdTe absorbing material grown by Liquid Phase Epitaxy (LPE) and an As implanted junction area. This architecture allows decreasing both dark current and series resistance compared to the legacy n on p technology based on Hg vacancies. In this paper, the technological improvements are briefly described. These technological tunings led to a 35% decrease of dark current in the diffusion regime. CEA-LETI and Sofradir demonstrated the ability to use the p on n technology with a long cutoff wavelength in the infrared range.
We studied the Ga-free InAs/InAsSb type-II superlattice (T2SL) period, thickness and antimony composition, in order to define an optimized structure suitable for detection of the full mid-wavelength infrared domain (MWIR). The SL structures were fabricated by MBE on n-type GaSb substrates and exhibited cut-off wavelengths between 5μm and 5.5μm at 150K. The growth procedure used to achieve strain-balanced structures is reported and first structural and optical results, made of high-resolution Xray diffraction pattern, AFM image scan, photoluminescence (PL) and time resolved photoluminescence measurements (TRPL), are presented and analyzed.
CEA and SOFRADIR have been manufacturing and characterizing near infrared detectors in the frame of ESA's near infrared large format sensor array roadmap to develop a 2Kx2K large format low flux low noise device for space applications such as astrophysics. These detectors use HgCdTe as the absorbing material and p/n diode technology. The technological developments (photovoltaic technology, readout circuit, ...) are shared between CEA/LETI and SOFRADIR, both in Grenoble, while most of the performances are evaluated at CEA/IRFU in Saclay where a dedicated test facility has been developed, in particular to measure very low dark currents. The paper will present the current status of these developments at the end of ESA's NIRLFSA phase 2. The performances of the latest batch of devices meet or are very close to all the requirements (quantum efficiency, dark current, cross talk, readout noise, ...) even though a glow induced by the ROIC prevents the accurate measurement of the dark current. The current devices are fairly small, 640x512 15μm pixels, and the next phase of activity will target the development of a full size 2Kx2K detector. From the design and development, to the manufacturing and finally the testing, that type of detector requests a high level of mastering. An appropriate manufacturing and process chain compatible with such a size is needed at industrial level and results obtained with CEA technology coupled with Sofradir industrial experience and work on large dimension detector allow French actors to be confident to address this type of future missions.
HgCdTe (MCT) is a very versatile material for IR detection. Indeed, the ability to tailor the cutoff frequency as close as
possible to the detection needs makes it a perfect candidate for high performance detection in a wide range of
applications and spectral ranges. Moreover, the high quality material available today, either by liquid phase epitaxy
(LPE) or molecular beam epitaxy (MBE) allows for very low dark currents at low temperatures and make it suitable for
very low flux detection application such as science imaging. MCT has also demonstrated its robustness to aggressive
space environment and faces therefore a large demand for space application such as staring at the outer space for science
purposes in which case, the detected photon number is very low This induces very strong constrains onto the detector:
low dark current, low noise, low persistence, (very) large focal plane arrays. The MCT diode structure adapted to fulfill
those requirements is naturally the p/n photodiode. Following the developments of this technology made at DEFIR and
transferred to Sofradir in MWIR and LWIR ranges for tactical applications, our laboratory has consequently investigated
its adaptation for ultra-low flux in different spectral bands, in collaboration with the CEA Astrophysics lab. Another
alternative for ultra low flux applications in SWIR range, has also been investigated with low excess noise MCT n/p
avalanche photodiodes (APD). Those APDs may in some cases open the gate to sub electron noise IR detection.. This
paper will review the latest achievements obtained on this matter at DEFIR (CEA-LETI and Sofradir common
laboratory) from the short wave (SWIR) band detection for classical astronomical needs, to the long wave (LWIR) band
for exoplanet transit spectroscopy, up to the very long waves (VLWIR) band.
This paper presents recent developments done at CEA-LETI Infrared Laboratory on processing and characterization of p-on-n HgCdTe (MCT) planar infrared focal plane arrays (FPAs) in LWIR and VLWIR spectral bands. These FPAs have been grown using liquid phase epitaxy (LPE) on a lattice matched CdZnTe substrate. This technology presents lower dark current and lower serial resistance in comparison with n-on-p vacancy doped architecture and is well adapted for low flux detection or high operating temperature. This architecture has been evaluated for space applications in LWIR and VLWIR spectral bands with cutoff wavelengths from 10μμm up to 17μm at 78K. Innovations have been introduced to the technological process to form a heterojunction with a LPE growth technique. The aim was to lower dark current at low temperature, by decreasing currents from the depletion region. Electro-optical characterizations on p-on-n photodiodes have been performed on QVGA format FPAs with 30μm pixel pitches. Results show excellent operabilities in current and responsivity, with low dispersion and noise limited by current shot-noise. Studies performed on dark current show that dark current densities are consistent with the heuristic prediction law "Rule07" at 78K. Below this temperature, dark current varies as a pure diffusion current.
We report the full electrooptical characterization of two MWIR InAs/GaSb superlattice (SL) pin
photodiodes. The first one features a symmetrical period with 8 InAs monolayers (MLs) and 8 GaSb MLs, while
the second one relies on an asymmetrical period with 7.5 InAs MLs and 3.5 GaSb MLs. This asymmetrical
design was recently proposed by IES to both decrease the dark current (since it decreases the intrinsic carrier
concentration) and increase the quantum efficiency (since it increases the wavefunctions overlap).
We present dark current, noise, spectral response and quantum efficiency measurements. Our results
confirm that the asymmetrical design allows to greatly improve the performance of MWIR SL pin photodiodes,
with an improvement of more than one decade in terms of dark current and an improvement of a factor 1.5 in
terms of quantum efficiency. The noise measurements under dark conditions show that the symmetrical
(asymmetrical) sample remains Schottky noise-limited up to a bias voltage of -600mV (resp -800mV) and that
1/f noise remains very low.
InAs/GaSb superlattice pin photodiodes showing asymmetrical period design were fabricated by MBE on ptype
GaSb substrate. These SL structures exhibited cut-off wavelength in the midwave infrared domain
(MWIR) at 5μm at 80K. Electrical characterizations including dark current and capacitance-voltage
measurements were performed on single detectors in the temperature range [77K-300K]. The SL photodiode
measurements revealed carrier concentrations of about 6x1014 cm-3 at 77K, dark current densities
J= 4x10-8 A/cm2 at 77K, J = 0.19A/cm2 at 200K and J = 10A/cm2 at 300K for Vbias =-50mV. The measured
R0A product is higher than 1.5x106Ω.cm2 at 77K and equal to 1x10-2Ω.cm2 at T=300K, for cut-off device
equal to 5μm and 6.05μm, respectively. These results are compared with the ones obtained by symmetrical
SL structure and show that the differential resistance area product is improved by more than one order of
magnitude. These results obtained help us to define the optimized SL pin structure design suitable for high
temperature operation in the MWIR domain.
Symmetric and asymmetric mid-wavelength infrared (MWIR) InAs/GaSb superlattice (SL) pin photodiode were
fabricated by Molecular Beam Epitaxy (MBE) on p-type GaSb substrate and characterized as a function of temperature.
The symmetric SL structure was made of 8 InAs monolayers (MLs) and 8 GaSb MLs and exhibits at 80K a cut-off
wavelength (λc) of 4.5μm, while the asymmetric SL design was composed of 7.5 InAs MLs and 3.5 GaSb MLs for
λc = 5.5μm at 80K.
Optical characterizations made of photoluminescence as a function of temperature and room temperature absorption
spectra were performed on these two kinds of structures. Several electrical characterizations including dark current and
capacitance-voltage measurements were also carried out on single detectors in the temperature range [77K-300K].
Results obtained were compared and analyzed in order to define optimized SL structure design for the high performance
in the MWIR domain.
We report the full electrooptical characterization of a MWIR InAs/GaSb superlattice (SL) pin
photodiode, including dark current, noise, spectral response and quantum efficiency measurements. The SL
structure was made of 8 InAs monolayers (MLs) and 8 GaSb MLs, with a total thickness of 3μm. It exhibits a
cut-off wavelength of 4.55 μm at 77K. Dark current measurements reveal a diffusion-limited behavior for
temperatures higher than 95K, and a R0A value of 1x106Ωcm2 at 77K. Noise measurements were performed
under dark conditions and are interpreted in this paper. The results show that the SL detector remains Schottky
noise-limited up to a bias voltage of -600mV and that 1/f noise is not present above 6Hz. Spectral response
revealed that the cut-off wavelength increases from 4.48μm to 4.91μm when the temperature increases from 12K
to 170K. The quantum efficiency in photovoltaic mode and at 77K is 25% (3μm-thick active zone device, single
pass and without any antireflection coating). All these electrooptical performances confirm the high quality of
the MWIR SL pin photodiode under test.
Mid-wavelength infrared (MWIR) InAs/GaSb superlattice (SL) pin photodiodes were fabricated by molecular Beam
Epitaxy on p-type GaSb substrate. Dark current measurements as a function of temperature were performed on single SL
detectors with two different period designs: one made of standard symmetric 8 InAs monolayers (MLs) / 8 GaSb MLs
SL period, another made of alternative design with asymmetric 7.5 InAs MLs / 3.5 GaSb MLs SL period. Comparison of
results revealed the predominance of the asymmetric SL design showing an improvement of the differential resistance
area product of nearly two orders of magnitude. Spectral response measurements performed on asymmetric SL showed
that the quantum efficiency was more than doubled.
Infrared detectors based on InAs/GaSb superlattices (SL) have recently emerged as a promising technology for high
performance infrared (IR) imaging systems. In this paper, we present the results of dark current and noise measurements
realized on MWIR superlattice single detectors. The SL structure was made of 8 InAs monolayers (MLs) and 8 GaSb
MLs, for a total thickness of 2μm. This structure exhibits a cut-off wavelength of 4.8μm at 77K. An original chemical
etching solution was designed to obtain smooth mesa sidewalls, followed by a simple passivation technique. Dark
current measurements were carried out to prove the good quality of both the etching and the passivation steps. The
measured R0A product reaches the state-of-the-art values at 80K. Noise measurements were also performed under dark
conditions. The detectors under test proved to be Schottky-limited on a range of bias voltage of 200mV typically, which
confirms the very good quality of the technological process.
Electrical properties of non-intentionally doped (nid) InAs/GaSb Superlattice (SL) structures and p-nid-n detectors
grown by Molecular Beam Epitaxy on GaSb substrate are reported. The SL structures were made of 600 periods of 8
InAs monolayers (MLs) and 8 GaSb MLs, for a total thickness of 3ìm. This structure exhibited a cutoff wavelength in
the midwave infrared (MWIR) domain, near 4.7μm at 80K. Electrical transport measurements, based on resistivity and
Hall Effect measurements, were performed on SL structure after removing the conducting GaSb substrate with an
appropriate technological process. Carrier concentrations and mobilities carried out as a function of temperature (77-
300K) for magnetic fields in the 0-1 Tesla range are analyzed. A change in type of conductivity is observed. The nid SL
layers is p-type at liquid Nitrogen temperature while is n-type at room temperature. These results are completed with
diode characterizations based on current-voltage (I-V) and capacitance-voltage (C-V) measurements performed on p-nidn
devices with identical InAs/GaSb SL active zone.
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