T centers in silicon could serve as efficient quantum memories based on spin-photon interface. But these emitters have long excited state lifetimes and are therefore dim. We demonstrate high-efficiency single photon emission from the zero-phonon line of a single T center using a nanobeam. The tapered nanobeam features coupling efficiency of 71% into a lensed fiber, enabling an order of magnitude improvement in photon count rates as compared to previously reported values. Consequently, we demonstrate single photon emission from the zero-phonon line, representing the coherent emission from the T center. Our result is an important step towards CMOS-integrated spin-photon interfaces.
D. Higginbottom, A. DeAbreu, C. Bowness, A. Alizadeh, C. Chartrand, N. Brunelle, E. MacQuarrie, N. Lee-Hone, M. Ruether, M. Kazemi, A. T. Kurkjian, M. L. Thewalt, S. Simmons
The performance of modular, networked quantum technologies will be contingent upon the quality of their light-matter interconnects. Solid-state colour centres, and in particular T centres in silicon, offer competitive technological and commercial advantages as the basis for quantum networking and distributed quantum computing. These newly rediscovered silicon defects offer direct telecommunications-band photonic emission, long-lived electron and nuclear spins, and proven integration into industry-standard, CMOS-compatible, silicon-on-insulator (SOI) photonic chips at scale. Here we present recent advances with T centre devices towards high-performance, large-scale distributed quantum technologies based upon T centres in silicon.
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