We report on the CMOS-compatible hybrid III-V/Silicon platform developed in CEA-LETI. In order to follow the large-scale integration capabilities of silicon photonics, already available worldwide in 200mm or 300mm through different foundries, the development of CMOS-compatible process for the III-V integration is of major interest. The technological developments involve not only the hybridization on top of a mature silicon photonic front-end wafer through direct molecular bonding but the patterning of the III-V epitaxy layer, low access resistance contacts, as well as planar multilevel BEOL must also be investigated and optimized. Test vehicles for the process validation based on either distributed feedback (DFB) or distributed Bragg reflector (DBR) laser cavities were designed. A modular approach is proposed in order to minimize the impact on the already qualified silicon photonics devices. Next, a collective III–V die bonding and processing have been successfully developed in this platform. The collective bonding, based on a flexible template holder, allows for large scale die to wafer transfer in both 200 and 300mm. After the III-V substrate removal and III-V patterning relying on optimized dry etching processes, CMOS compatible metallization’s are used to realize ohmic contact on n-InP and P-InGaAs leading to contact resistivity in the range of 10−6 Ω·cm². While first demonstrations have been obtained through wafer bonding, the fabrication process was subsequently validated on III-V dies bonding with a fabrication yield of Fabry-Perot lasers of 97% in 200mm. A planarized two-metal-level BEOL was used to connect the devices, leading to a drastic reduction of series resistance between 5.5 and 7 Ω. Finally, the functionality of DFB and DBR lasers is demonstrated with SMSR up to 50 dB and maximum output power of 3 mW in CW. The overall technological features are expected improve the efficiency, density, and cost of silicon photonics PICs.
We report on our recent advances on integrated hybrid InP/SOI transmitters using the Silicon Photonic fabrication technology. We demonstrate the direct modulation at 10 Gbits/s of different laser configurations such as wavelength tunable lasers, Distributed FeedBack (DFB) lasers and Chirp Managed Lasers (CMLs). We will also present the design, fabrication and characterization of various hybrid InP/SOI transmitters integrating lasers (tunable or DFB) and modulators (silicon or III-V) with modulation up to 32 Gbits/s.
We present techniques for modeling the physics and systems-level characteristics of integrated IQ-transmitters for 100G+ applications and emphasize important design aspects. Using time-and-frequency-domain modeling (TFDM) of Photonic Integrated Circuits (PIC), we present a detailed IQ-transmitter model based on the physics and setup of active and passive subcomponents. With this, we link characteristics of subcomponents (bending loss of waveguides, phase changes in MMI couplers, sweep-out time of EAMs) to systems-level characteristics of the integrated IQ-transmitter (extinction ratio, modulation bandwidth, chirp). Further, a behavioral transmitter model is introduced and utilized to assess electrical driving requirements (allowed jitter, noise, synchronization offset).
A very simple OCT system has been developed, based on a Linnik interferometric microscope with its reference mirror mounted on a piezoelectric translator. The geometrical extension of the optics allows efficient illumination of this device with a low power (3 W) light bulb, yielding full field interferometric images at 50 Hz acquisition rate with a fast CCD camera. Due to the very broad spectral width of the light source and camera response, an axial resolution better than 2 micrometers is easily achieved. Tomographic images of cell smears are shown.
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.