Dr. Dmitri V. Donetski Profile

Dr. Dmitri V. Donetski

at Stony Brook Univ

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Author

Publications (9)

Proceedings Article | 11 June 2013 Paper

Infrared emitters and photodetectors with InAsSb bulk active regions

Ding Wang , Youxi Lin, Dmitry Donetsky, Gela Kipshidze , Leon Shterengas, Gregory Belenky, Stefan Svensson, Wendy Sarney, Harry Hier

Proceedings Volume 8704, 870410 (2013) https://doi.org/10.1117/12.2016082

KEYWORDS: Heterojunctions, Antimony, Quantum efficiency, Infrared radiation, Electroluminescence, Sensors, Photodetectors, Infrared photography, Long wavelength infrared, Laser sintering

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Proceedings Article | 31 May 2012 Paper

Unrelaxed bulk InAsSb with novel absorption, carrier transport, and recombination properties for MWIR and LWIR photodetectors

Ding Wang, Youxi Lin, Dmitry Donetsky, Leon Shterengas, Gela Kipshidze, Gregory Belenky, Wendy Sarney, Harry Hier, Stefan Svensson

Proceedings Volume 8353, 835312 (2012) https://doi.org/10.1117/12.919451

KEYWORDS: Gallium antimonide, Antimony, Indium arsenide, Absorption, Long wavelength infrared, Laser sintering, Superlattices, Mid-IR, Photodetectors, Luminescence

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Proceedings Article | 21 May 2011 Paper

Effects of carrier concentration and phonon energy on carrier lifetime in type-2 SLS and properties of InAs[sub]1-X[/sub]Sb[sub]X[/sub] alloys

G. Belenky, G. Kipshidze, D. Donetsky, S. Svensson, W. Sarney, H. Hier, L. Shterengas, D. Wang, Y. Lin

Proceedings Volume 8012, 80120W (2011) https://doi.org/10.1117/12.883625

KEYWORDS: Laser sintering, Gallium antimonide, Antimony, Long wavelength infrared, Mercury cadmium telluride, Mid-IR, Absorption, Modulation, Phonons, Indium arsenide

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Proceedings Article | 4 May 2010 Paper

Carrier lifetime measurements in InAs/GaSb strained layer superlattice structures

Stefan Svensson, Dmitry Donetsky, Ding Wang, Patrick Maloney, Gregory Belenky

Proceedings Volume 7660, 76601V (2010) https://doi.org/10.1117/12.849514

KEYWORDS: Laser sintering, Interfaces, Absorption, Gallium antimonide, Superlattices, Modulation, Indium arsenide, Camera shutters, Luminescence, Mercury cadmium telluride

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Proceedings Article | 12 February 2008 Paper

Interband GaSb-based laser diodes for spectral regions of 2.3-2.4 µm and 3-3.1 µm with improved room-temperature performance

Gregory Belenky, Dimitri Donetski, Leon Shterengas, Takashi Hosoda, Jianfeng Chen, Gela Kipshidze, Michail Kisin, David Westerfeld

Proceedings Volume 6900, 690004 (2008) https://doi.org/10.1117/12.754713

KEYWORDS: Waveguides, Semiconductor lasers, Quantum wells, Heterojunctions, Laser development, Aluminum, Indium gallium arsenide antimonide, Continuous wave operation, Gallium antimonide

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Proceedings Article | 13 September 2005 Paper

1.5 and 2.3 µm diode laser arrays for optical pumping

A. Gourevitch, G. Belenky, L. Shterengas, D. Donetsky, D. Westerfeld, B. Laikhtman, R. Martinelli, G. Kim

Proceedings Volume 5887, 588711 (2005) https://doi.org/10.1117/12.620001

KEYWORDS: Temperature metrology, Semiconductor lasers, Laser development, Pulsed laser operation, High power lasers, Continuous wave operation, Resistance, Erbium, Erbium lasers, Optical pumping

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High wall-plug efficiency and a wide range of available wavelengths make laser diode arrays preferable for many high-power applications, including optical pumping of solid state lasers. Recently, we designed and fabricated InGaAsP/InP arrays operating at 1.5-μm and In(Al)GaAsSb/GaSb arrays operating at 2.3-μm. We have demonstrated a high continuous-wave (CW) output power of 25 W from a one dimensional laser array and a quasi-CW (q-CW) output power of 110 W from a two dimensional laser array both operating near 1.5-μm. We have obtained a CW output power of 10 W from the 2.3-μm laser array. The 1.5-μm arrays are suitable for resonant pumping of erbium doped solid-state lasers, which require high power optical sources emitting in the narrow erbium absorption bands. Long current-injection pulses produce a considerable temperature increase within the diode laser structure which induces a red-shift of the output wavelength. This thermal drift of the laser array emission spectrum can lead to misalignment with the erbium absorption bands, which decreases pumping efficiency. We have developed an experimental technique to measure the time dependence of the laser emission spectrum during a single current pulse. From the red-shift of the laser emission, we determine the temperature of the laser active region as a function of time. The spacing between the individual laser emitters has an effect on the array heating. In steady state operation, this spacing is a contributing factor in the non-uniformity of the thermal field within the bar, and thus to the overall thermal resistance of the laser bar. Under pulse operation, the transient heating process can be divided into three time periods; each with its own heat transport condition. It was shown that in the initial period of time the heat propagates within the laser bar structure and the laser bar design (fill factor) strongly affects the active region temperature rise. In the later periods the temperature kinetics is insensitive to the fill factor. This analysis has been verified in experimental studies using the 1.5-μm laser arrays.

Proceedings Article | 22 May 2002 Paper

Optical gain and loss in 3-um diode W lasers

Sergei Suchalkin, David Westerfeld, Dimitrii Donetski, Ramon Martinelli, Igor Vurgaftman, Jerry Meyer, Serge Luryi, Gregory Belenky

Proceedings Volume 4651, (2002) https://doi.org/10.1117/12.467946

KEYWORDS: Semiconductor lasers, Diodes, Temperature metrology, Mid-IR, Continuous wave operation, Laser optics, Optical pumping, Cladding, Active optics, Electrons

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Proceedings Article | 6 August 1999 Paper

Role of p-doping profile in InGaAsP multiquantum well lasers: comparison of simulation and experiment

Mark Hybertsen, Muhammad Alam, Gleb Shtengel, Gregory Belenky, C. Reynolds, Dmitri Donetsky, R. Kent Smith, Gene Baraff, Rudolf Kazarinov, James Wynn, L. Smith

Proceedings Volume 3625, (1999) https://doi.org/10.1117/12.356912

KEYWORDS: Optical simulations, Quantum wells, Doping, Scattering, Quantum optics, Modulation, Laser scattering, Semiconductor lasers, Photons, Diamond

Proceedings Article | 7 July 1998 Paper

Temperature dependencies of output characteristics of 1.3-um InGaAsP/InP lasers with different profiles of p-doping

Dmitri Donetsky, Gregory Belenky, Gleb Shtengel, C. Reynolds, Rudolf Kazarinov, Serge Luryi

Proceedings Volume 3283, (1998) https://doi.org/10.1117/12.316692

KEYWORDS: Doping, Interfaces, Temperature metrology, Laser damage threshold, Zinc, Active optics, Heterojunctions, Measurement devices, Quantum wells, Laser development

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Showing 5 of 9 publications

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