Dr. Dmitry Veksler Profile

Dr. Dmitry Veksler

at Aerospace Corp

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Author

Publications (5)

Proceedings Article | 5 March 2022 Paper

Physical failure analysis of stressed and proton-irradiated RF AlGaN-GaN HEMTs with Ni-Pd-Au Schottky contacts

Yongkun Sin, Dmitry Veksler, Patrick Edwards, Miles Brodie, Scott Sitzman, Zachary Lingley

Proceedings Volume 12001, 120010E (2022) https://doi.org/10.1117/12.2606276

KEYWORDS: Field effect transistors, Gallium nitride, Transmission electron microscopy, Palladium, Failure analysis, Metals, Gold, Reliability, Nickel, Ion beams

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Proceedings Article | 4 March 2022 Presentation + Paper

Automated laser soldering techniques for ultrasonically embedded wires in a hybrid additive manufacturing environment for electric multifunctionality

Emerson Armendariz, David Sepulveda, David Espalin, Jacob Rome, Andrew Hall, Dmitry Veksler

Proceedings Volume 11992, 1199209 (2022) https://doi.org/10.1117/12.2615234

KEYWORDS: Laser welding, Additive manufacturing, Manufacturing, 3D printing, Resistance, Electronics, Capacitance, Copper, Robotics, Radiation thermography

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Proceedings Article | 5 March 2021 Presentation + Paper

Out-diffusion of Pd as part of degradation mechanisms in RF AlGaN-GaN HEMTs with Ni-Pd-Au Schottky contacts: part II

Yongkun Sin, Dmitry Veksler, William Hubbard, Scott Sitzman, Miles Brodie, Zachary Lingley, Neil Ives

Proceedings Volume 11686, 116862A (2021) https://doi.org/10.1117/12.2576910

KEYWORDS: Field effect transistors, Palladium, Gallium nitride, Transmission electron microscopy, Silicon carbide, Reliability, Strain analysis, Physics, Manufacturing

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Proceedings Article | 27 February 2020 Paper

Out-diffusion of Pd as a potential degradation mechanism in GaN HEMTs with Ni-Pd-Au Schottky contacts

Yongkun Sin, Dmitry Veksler, William Hubbard, Miles Brodie, Scott Sitzman, Zachary Lingley

Proceedings Volume 11280, 112801I (2020) https://doi.org/10.1117/12.2543432

KEYWORDS: Palladium, Field effect transistors, Gallium nitride, Transmission electron microscopy, Nickel, Reliability, Gold, Silicon carbide, Metals

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Proceedings Article | 1 March 2019 Paper

Electrical and structural characteristics of aged RF GaN HEMTs and irradiated high-power GaN HEMTs with protons and heavy ions

Yongkun Sin, Dmitry Veksler, Jeremy Bonsall, Scott Sitzman, Miles Brodie, Zachary Lingley, Brendan Foran

Proceedings Volume 10918, 109181B (2019) https://doi.org/10.1117/12.2507016

KEYWORDS: Field effect transistors, Gallium nitride, Transmission electron microscopy, Reliability, Strain analysis, Radiation effects, Amplifiers

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