A trichromatic phosphor-free white light-emitting diode (LED) has been implemented by using adhesive bonding
scheme. The device has been operated as a three-terminal device with independent electrical control of an AlGaInPbased
red LED chip and a GaN-based dual-wavelength (blue and green) LED chip. As 25mA and 60mA was injected into the red and blue-green LED chips at room temperature respectively, white light emission could be observed with CIE chromaticity coordinates (0.3330,0.3241), correlated color temperature Tc=5467K and optical power Φe=2.223mW. The electroluminescence measurements also show that the emitted white light is composed of blue, green and red lights, centered at around 452nm, 517nm and 632nm. The fabrication and the electrical and optical performances of such white LED were described.
The relationship between the wavelength shift and the thickness of the air gap was investigated by the Optical Standing
Wave Method; the modal characteristics of the MEMS tunable Vertical Cavity Surface Emitting Lasers were also
analysed in the Dielectric Cylindrical Waveguide by the Improved Effective Index Model.
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