IR Sensors and imagers using nanostructure based materials are being developed for a variety of
Defense and Commercial Applications. In this paper, we will discuss recent modeling effort and
the experimental work under way for development of next generation CNT and Graphene based
bolometer for these applications. We will discuss detector concepts that will provide next
generation high performance, high frame rate, and uncooled nano-bolometer for MWIR and
LWIR bands. We will discuss the path forward to demonstrate enhanced IR sensitivity for
bolometer arrays.
EO/IR Sensors and imagers using nanostructure based materials are being developed for a variety
of Defense Applications. In this paper, we will discuss recent modeling effort and the
experimental work under way for development of next generation carbon nanostructure based
infrared detectors and arrays. We will discuss detector concepts that will provide next generation
high performance, high frame rate, and uncooled nano-bolometer for MWIR and LWIR bands.
The critical technologies being developed include carbon nanostructure growth, characterization,
optical and electronic properties that show the feasibility for IR detection. Experimental results on
CNT nanostructures will be presented. We will discuss the path forward to demonstrate
enhanced IR sensitivity and larger arrays.
EO/IR Sensors and imagers using nanostructure based materials are being developed for a variety of Defense
Applications. In this paper, we will discuss recent modeling effort and the experimental work under way for
development of next generation carbon nanostructure based infrared detectors and arrays. We will discuss
detector concepts that will provide next generation high performance, high frame rate, and uncooled nanobolometer
for MWIR and LWIR bands. The critical technologies being developed include carbon
nanostructure growth, characterization, optical and electronic properties that show the feasibility for IR
detection. Experimental results on CNT nanostructures will be presented. We will discuss the path forward to
demonstrate enhanced IR sensitivity and larger arrays.
High resolution imaging in the UV band has a lot of applications in Defense and Commercial
Applications. The shortest wavelength is desired for spatial resolution which allows for small pixels and
large formats. UVAPD's have been demonstrated as discrete devices demonstrating gain. The next frontier is
to develop UV APD arrays with high gain to demonstrate high resolution imaging. We also disuses our recent
efforts on development of APD's using MOCVD of GaN/ AlGaN.
We present an analytical model that can predict sensor performance in the UV band using p-i-n or
APD detectors with and without gain and other detector and sensor parameters for a desired UV band of
interest. SNR's can be modeled from illuminated targets at various distances with high resolution under
standard MODTRAN atmospheres in the UV band using detector arrays with unity gain and with high gain
APD along with continuous or pulsed UV lasers.
Next Generation EO/IR focal plane arrays using nanostructure materials are being developed for a variety
of Defense Applications including Unattended Ground Sensor Applications. Several different
nanomaterials are being evaluated for these applications. These include ZnO nanowires that have
demonstrated large signal to noise ratio as a wide band gap nanostructure material in the UV band.
Similarly, the work is under way using Carbon Nanotubes (CNT) for a high speed detector and focal plane
array as bolometer for IR bands of interest, which can be implemented for the unattended ground sensor
applications.
In this paper, we will discuss the sensor design and model predicting performance of an EO/IR focal plane
array that can cover the UV to IR bands of interest. The model can provide a robust means for comparing
performance of the EO/IR FPA's and Sensors that can operate in the UV, Visible-NIR (0.4-1.8μ), SWIR
(2.0-2.5μ), MWIR (3-5μ), and LWIR bands (8-14μ). This model can be used as a tool for predicting
performance of nanostructure arrays under development. We will also discuss our results on growth and
characterization of ZnO nanowires and CNT's for the next generation sensor applications. Several
approaches for compact energy harvesting using nanostructures will be discussed.
E-O Sensors are being developed for a variety of Military Systems Applications. These include UV, Visible,
SWIR, MWIR and LWIR Nano Sensors. In this paper, we will discuss growth and characterization of ZnO
Nanowires on a variety of substrates that include Silicon, ZnO and flexible substrates.
The critical technologies being developed include ZnO nanostructures with wide band gap for UV detection
for a variety of threat warning applications. We will present experimental results on the structural, electrical
and optical properties of ZnO nanowire for UV detectors. Experimental results on ZnO based nanostructures
demonstrate enhanced UV sensitivity and path forward for larger arrays.
EO/IR Nanosensors are being developed for a variety of Defense and Commercial Systems
Applications. These include UV, Visible, NIR, MWIR and LWIR Nanotechnology based
Sensors. The conventional SWIR Sensors use InGaAs based IR Focal Plane Array (FPA) that
operate in 1.0-1.8 micron region. Similarly, MWIR Sensors use InSb or HgCdTe based FPA that
is sensitive in 3-5 micron region. More recently, there is effort underway to evaluate low cost
SiGe visible and near infrared band that covers from 0.4 to 1.6 micron.
One of the critical technologies that will enhance the EO/IR sensor performance is the
development of high quality nanostructure based antireflection coating. Prof. Fred Schubert and
his group have used the TiO2 and SiO2 graded-index nanowires / nanorods deposited by obliqueangle
deposition, and, for the first time, demonstrated their potential for antireflection coatings by
virtually eliminating Fresnel reflection from an AlN-air interface over the UV band. This was
achieved by controlling the refractive index of the TiO2 and SiO2 nanorod layers, down to a
minimum value of n = 1.05, the lowest value so far reported
In this paper, we will discuss our modeling approach and experimental results for using oblique
angle nanowires growth technique for extending the application for UV, Visible and NIR sensors
and their utility for longer wavelength application. The AR coating is designed by using a genetic
algorithm and fabricated by using oblique angle deposition. The AR coating is designed for the
wavelength range of 400 nm to 2500 nm and 0° to 40° angle of incidence. The measured average
optical transmittance of an uncoated glass substrate between 1000 nm and 2000 nm is improved
from 92.6% to 99.3% at normal incidence by using a two-layer nanostructured AR coating
deposited on both surfaces of the glass substrate.
In this paper we will present innovative design approach for UV Focal Plane Array for Photon Counting Applications. This Focal Plane includes the building a large area silicon micro-channel plate (MCP) using GaN photocathode. In this paper, we will present the design and simulation of silicon micro-channel plate with GaN photocathode with large area array with 2 micron pores and 3 micron pitch. We will also present results for the ICP-RIE process to fabricate 2 micron pores, and Growth of high conductivity GaN photocathodes using MOCVD to produce 40% QE. We will also discuss approaches for development of readout architecture and circuit for Silicon based MCP 4096x4096 UV FPA. The readout architecture scheme uses a series of charge sensitive amplifiers (CSA) to boost the charge received on each anode. The signal from each CSA is then passed into a shaping amplifier (SA) that produces a smooth waveform. The peak of the smoothed waveform is captured by a sample and hold (S/H) circuit that holds the signal until an analog to digital (A/D) converter can sample it. Details of the ROIC circuit will be presented.
LWIR and Multi-color LWIR Focal Planes are being developed for a variety of Space applications. A variety of Focal Plane array technologies, that includes HgCdTe, PbSnTe and other novel technologies are being developed. These detectors FPAs will require High quality two-dimensional, small unit cell, Silicon CMOS based ROICs for efficient read-out circuits. This Paper will discuss some of the salient features of various approaches being developed for the IR focal plane applications. We will also present Trade-off analysis for design of a trans-impedance input amplifier with reset and compact signal average for low noise performance. We will also discuss the various approaches for design of an A/D converter with high linearity and speed. We will discuss approaches to achieve ROIC with low noise floor, high dynamic range and high frame rate.
High Performance LWIR Focal Plane Arrays are critical for many space applications. Reliable LWIR focal plane arrays are needed for these applications that can operate in space environment without any degradation.
In this paper, we present various LWIR detector array architectures currently being evaluated for LWIR applications. These include backside-illuminated configurations for HgCdTe fabricated on CdZnTe and Silicon substrates. To optimize the LWIR device performance, minimize the anti-reflection losses, and significant reduction in the effects of solarization in space, innovative Anti-reflection coatings are needed, that will enhance the performance of the LWIR detector / focal plane arrays.
We also present AR Coating models and experimental results on several promising multi-layer AR coatings that includes CdTe, Si3N4 and diamond like Carbon, that have the necessary spectral response in the 8-14 microns and are hard materials with excellent bond strength. A combination of these materials offers the potential of developing anti-reflection coatings with high optical quality with controlled physical properties.
Multi-color infrared (IR) focal planes are required for high performance sensor applications. These sensors will require multi-color focal plane arrays (FPA) that will cover various wavelengths of interest in MWIR/LWIR and LWIR/VLWIR bands. There has been a significant progress in HgCdTe detector technology for multi-color MWIR/LWIR and LWIR/VLWIR focal plane arrays [1,2,3]. Two-color IR FPA eliminate the complexity of multiple single-color IR FPAs and provide a significant reduction of weight and power in a simpler, reliable and affordable systems.
The complexity of multicolor IR detector MWIR/LWIR makes the device optimization by trial and error not only impractical but also merely impossible. Too many different geometrical and physical variables need to be considered at the same time. Additionally material characteristics are only relatively controllable and depend on the process repeatability. In this context the ability of performing simulation experiments where only one or a few parameters are carefully controlled is paramount for a quantum improvement of a new generation of multicolor detectors for various applications.
Complex multi-color detector pixels cannot be designed and optimized by using a conventional 1D models. Several additional physical phenomena need to be taken into account. In designing a conventional photovoltaic IR detector array, a trade off exists on the choice of the pixel pitch, the pixel area and its height. The main goal of the device optimization is to reduce the pixel cross talk while keeping a high filling factor and detection efficiency. If the pixel height is made comparable to the lateral pixel dimension the contribution of the lateral photocurrent and lateral generation-recombination current becomes relevant and a full 2D simulation needs to be performed. It also important to point out that the few attempts to perform 2D simulations have reached the conclusion that for advanced IR arrays a full 3D approach should be used. The most challenging aspect of the array design and simulation is the pixel cross-talk effects. Since this is caused by the interaction with the four nearest neighboring pixels, even a description based on a 2D simulation model in most cases is not adequate. It is consequently important to include results from 3D simulation models as a guide to build lower dimensionality models.
GaN /AlGaN transistors are being developed for a variety of RF electronic and high temperature elctronics applications that will replace GaAs and Silicon devices and circuits for commercial and military applications. AlGaN/ GaN based HEMT device structure shows significant potential to meet these needs. In this paper, we present a GaN/AlGaN based HEMT design with modeling results, that includes AlN buffer layer followed by AlGaN layers on lattice matched semi-insulating SiC substrates. These devices were grown using RF Plasma Assisted MBE Technique. This approach has demonstrated very uniform epitaxial layers. Key to high quality HEMT structures is the ability to grow high quality AlN Buffer layers. Details of the electrical and optical characteristics of the HEMT layers and devices are presented and a short overview of semi-insulating SiC crystal growth is given.
We propose that without rapid advances, optical testing of optical components will continue to be a major obstacle in the economical deployment of optical communications. We explore the communications-system drivers of these changes, the implications of these changes on the test process and apparatus, and identify certain obstacles which must be overcome. In some cases, solution paths are being identified, and we outline a number of these.
This paper examines three applications of automation technology in the manufacture of Infrared Focal Plane arrays. Areas to
be examined ar wafer handling during array fabrication up through dicing, automation ofLiquid Phase Epitaxy, and automation
of bump bonding. The collection of factory data and its use in control of the manufacturing process will also be discussed. Specifics
related to the production of Z-module architecture will be emphasized.
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