Mr. George Huang Profile

George Huang

Assignee at SUNY Poly SEMATECH

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Publications (5)

Proceedings Article | 23 March 2012 Paper

Line width roughness control for EUV patterning

Karen Petrillo, George Huang, Dominic Ashworth, Liping Ren, K.-Y. Cho, Stefan Wurm, Shinichiro Kawakami, Lior Huli, Shannon Dunn, Akiteru Ko

Proceedings Volume 8322, 83222H (2012) https://doi.org/10.1117/12.925442

KEYWORDS: Line width roughness, Extreme ultraviolet lithography, Etching, Line edge roughness, Image processing, Extreme ultraviolet, Silicon, Optical lithography, Lithography, Scanning electron microscopy

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Proceedings Article | 20 April 2011 Paper

Scatterometry for EUV lithography at the 22-nm node

Benjamin Bunday, Victor Vartanian, Liping Ren, George Huang, Cecilia Montgomery, Warren Montgomery, Alex Elia, Xiaoping Liu

Proceedings Volume 7971, 797120 (2011) https://doi.org/10.1117/12.881407

KEYWORDS: Metrology, Extreme ultraviolet lithography, Semiconducting wafers, Critical dimension metrology, Extreme ultraviolet, Photoresist materials, Scatterometry, Lithography, Ultraviolet radiation, Process control

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Proceedings Article | 7 April 2011 Paper

Line width roughness control and pattern collapse solutions for EUV patterning

Karen Petrillo, George Huang, Dominic Ashworth, Jacque Georger, Liping Ren, K. Y. Cho, Warren Montgomery, Stefan Wurm, Shinichiro Kawakami, Shannon Dunn, Akiteryu Ko

Proceedings Volume 7969, 796913 (2011) https://doi.org/10.1117/12.879513

KEYWORDS: Line width roughness, Extreme ultraviolet, Extreme ultraviolet lithography, Etching, Photoresist processing, Image processing, Semiconducting wafers, Optical lithography, Critical dimension metrology, Scanning electron microscopy

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Proceedings Article | 23 March 2010 Paper

Particle protection capability of SEMI-compliant EUV-pod carriers

George Huang, Long He, John Lystad, Tom Kielbaso, Cecilia Montgomery, Frank Goodwin

Proceedings Volume 7636, 763625 (2010) https://doi.org/10.1117/12.845957

KEYWORDS: Extreme ultraviolet, Particles, Prototyping, Robotics, Extreme ultraviolet lithography, Photomasks, Reticles, Data storage, Scanners, Semiconducting wafers

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Proceedings Article | 18 March 2010 Paper

Characterization of promising resist platforms for sub-30-nm HP manufacturability and EUV CAR extendibility study

Chawon Koh, Jacque Georger, Liping Ren, George Huang, Frank Goodwin, Stefan Wurm, Dominic Ashworth, Warren Montgomery, Bill Pierson, Joo-on Park, Patrick Naulleau

Proceedings Volume 7636, 763604 (2010) https://doi.org/10.1117/12.846629

KEYWORDS: Optical lithography, Extreme ultraviolet, Manufacturing, Line width roughness, Polymers, Etching, Extreme ultraviolet lithography, Resistance, Glasses, Photoresist processing

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Extreme ultraviolet lithography (EUVL) is the most effective way to print sub-30 nm features. We characterized EUVL readiness of the three major resist platforms for sub-30 nm half-pitch (HP) manufacturability using a full-field ASML alpha demo tool (ADT) scanner and studied the extendibility of EUV chemically amplified resist (CAR). Based on an "M-factor" analysis, which shows the maturity of EUV resist for 28 nm HP manufacturability, a polymer-bound photoacid generator (PAG) resist was 78% ready, a PHS hybrid resist was 81%, and a molecular glass EUV resist was 58%. The polymer-bound resist showed good resolution for 25 nm HP using the ASML ADT. It also demonstrated fair linewidth roughness (LWR) and a good lithographic process margin of 18% exposure latitude (EL) and 160 nm depth of field (DOF) for 28 nm HP patterning compared with the other resist platforms, but its resist collapse and etch resistance need to be improved for manufacturability. PHS hybrid resist showed a fair etch resistance and resist collapse performance compared to the other resist platforms, but LWR needs to be improved. The molecular resist needs to mature further, especially in resist collapse and iso-dense (ID) bias. When considering its many strong points and control of lower acid diffusion, the polymer-bound PAG resist appears to be the most suitable platform for manufacturability and EUV CAR extension. We therefore would like to encourage the development of next generation polymer-bound PAG resist with a higher etch resistance. A process window of 80 nm DOF was demonstrated for 26 nm HP patterning and a measurable DOF for 25 nm HP was achieved with the polymer-bound PAG resist. Resist collapse and LWR are major issues for 22 nm HP patterning in manufacturing. LWR improvements were achieved with various techniques, and resist collapse was greatly improved with a novel approach that uses a residual resist layer. 16 nm HP line/space (L/S) image modulation and 18 nm HP resolution were demonstrated with an EUV CAR, indicating that EUV CAR could be extended to sub-20 nm HP patterning.

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