Multi-Resonance Emitters (MREs) are a promising candidate for fulfilling the harsh requirements of display applications due to their unique photophysical properties. Recently, MREs have been widely used as a Terminal Emitter (TE) in Hyper Fluorescence Organic Light-Emitting Diodes (HF-OLEDs); however, since MREs are always TADF-active, possessing long triplet lifetimes in milli-second order, they result in severe chemical degradation. The device lifetime of blue OLED is still a challenge. Here, instead of shortening the delayed lifetime of MREs by molecular design, we introduced a low-triplet pyrene unit into an MRE scaffold to achieve narrowband emission and quick removal of triplets in MREs simultaneously. Blue HF-OLED based on the non-TADF MRE demonstrated a high external quantum efficiency (EQE) of 20% and a ten-fold improvement in stability, compared to those of the HF-OLEDs with standard MREs.
Organic light-emitting diodes (OLEDs) are a promising light-emitting technology useful for various display applications1,2. Despite great progress in this field3-12, there is an ongoing challenge to realize high performance blue OLEDs with efficiency, good color purity, and device lifetime. Here, we report pure-blue (CIEx,y color coordinates of [0.13, 0.16]) OLEDs with high-efficiency (external quantum efficiency of 32 % at 1000 cd m–2 ), narrow-emission (full width half maximum of 19 nm), and good stability (LT95 of 18 hours at an initial luminance of 1000 cd m–2 ). The design is based on a two-unit stacked tandem hyperfluorescence (HF)-OLED with an improved singlet-excited energy transfer process from a sky-blue TADF assistant dopant (AD) (HDT-1) to a pure-blue terminal emitter (TE) (v-DABNA). Furthermore, the effect of dopant concentration of terminal emitter on the device performance of hyperfluorescence OLEDs is studied. Device shows a better color purity when dopant concentration is increased. On the other hand, new hyperfluorescence OLEDs have been fabricated, in which device stability has been extended with a new molecular design of TE.
In this study, we developed highly efficient pixelated near-infrared organic light-emitting diodes (NIR-OLEDs) featuring self-emission and small form factor, which are expected to expand applications of light sensing. To realize new NIROLEDs in which active-matrix drive is possible by multiple fine pixels, we established a highly efficient NIR-OLED material and top-emitting NIR-OLEDs with fine pixels. Excellent characteristics including pixel pitch of 7.8 μm, peak wavelength of more than 900 nm, and external quantum efficiency of approximately 1% were successfully demonstrated. In addition, we confirmed the feasibility of highly efficient NIR-OLEDs with fine pixels, which is expected to contribute toward miniaturized sensing light sources with low power consumption, and hence improved value.
Organic light-emitting diodes (OLEDs) are a promising light-emitting technology useful for various display applications. Despite great progress in this field, there is an ongoing challenge to realize high-performance blue OLEDs with efficiency, good color purity, and device lifetime. Here, we report pure-blue (CIEx,y color coordinates of [0.13, 0.16]) OLEDs with high-efficiency (external quantum efficiency of 32 % at 1000 cd m–2), narrow-emission (full-width half maximum of 19 nm), and good stability (LT95 of 18 hours at an initial luminance of 1000 cd m–2). The design is based on a two-unit stacked tandem hyperfluorescence (HF)-OLED with an improved singlet-excited energy transfer process from a sky-blue TADF assistant dopant (AD) (HDT-1) to a pure-blue terminal emitter (TE) (v-DABNA). Furthermore, the effect of the dopant concentration of terminal emitter on the device performance of hyperfluorescence OLEDs is studied. The device shows a better color purity when dopant concentration is increased. On the other hand, new hyperfluorescence OLEDs are fabricated, in which v-DABNA is replaced by DABNA-2 and dopant concentration is kept to be 0.5 %. Such device shows a lengthened device stability of LT95 of 26 h at an initial luminance of 1000 cd m-2
There are currently various near-infrared (NIR) light sources for sensing applications. To expand the application of NIR sensing, we are advancing research and development a self-emissive NIR-OLED microdisplay featuring a compact form factor and active drive as a new sensing light source.
In general, in the NIR region having a narrow energy gap, an exciton of organic emitters readily decays non-radiatively to the ground state. Therefore, it is challenging to obtain high-efficiency light emission. To overcome this problem, a TADF (thermally-activated delayed fluorescence) material having a rigid electron-accepting unit exhibiting strong electron-withdrawing properties is used as an assisting dopant for a molecule exhibiting fluorescence in the 900nm band. It thereby realized a near-infrared light-emitting characteristic with a longer wavelength, higher efficiency, and higher durability than a conventional device.
Furthermore, in order to actively drive this highly efficient NIR-OLED material on a silicon substrate, a top emission structure is required. To cope with this issue, the optical design was optimized for NIR band emission by the micro-cavity effect. The optimum structure for high-efficiency NIR emission was adopted by examining the structure around the emission layer and the encapsulation process.
By integrating this high-efficiency NIR-OLED device with a CMOS-based high-definition backplane formed on a silicon substrate, it’ll have the potential to be realized a high-efficiency NIR-OLED microdisplay with a pixel pitch of 7.8 μm and a maximum external quantum efficiency of approximately 1% and an emission wavelength of over 900 nm. Through this study, it was confirmed that the NIR light emission was possible with high efficiency with fine pixel in principle. It’s expected to contribute to power saving and miniaturization as a new sensing light source to be applicable to new value creation.
We fabricated well-ordered, crystalline mono- and multilayers of disk-shaped thermally activated delayed fluorescence (TADF) molecules such as 4CzIPN, 2CzPN, and 5CzBN. The slow deposition of these molecules on flat substrates such as Ag(111) at room temperature resulted in the formation of well-ordered and homogeneous monolayers. Moreover, the multilayer of the 4CzIPN was also found to be well-ordered and flat when deposited on highly oriented pyrolytic graphite (HOPG). The electronic states of the crystalline monolayer and multilayer of 4CzIPN were found to be nearly the same, suggesting that the electronic states of both layers are not altered significantly by adsorption on substrates. Indeed, we also confirmed the delayed fluorescence from the crystalline multilayer of 4CzIPN on the HOPG substrate even in an ambient condition. These results show promising applications of crystalline films of disk-shaped TADF-molecules such as 4CzIPN for organic light-emitting diodes devices with high outcoupling efficiency.
The photophysical properties of six types of carbazole benzonitrile (CzBN) derivatives are investigated in different solvents to examine the thermally activated delayed fluorescence (TADF) activation via reducing the energy gap between the singlet charge-transfer and triplet locally excited states, ΔEST(LE). Relative to the ΔEST(LE) values for the CzBN derivatives in the low polarity solvent toluene (ϵ∼2), a reduction of ΔEST(LE) for the CzBN derivatives in the polar solvent acetonitrile (ϵ∼37) was confirmed while maintaining fairly constant ΔEST values. Notably, TADF activation was observed in acetonitrile for some CzBN derivatives that are TADF inactive in toluene. A numerical analysis of various rate constants revealed the cause of TADF activation as an increase in the reverse intersystem crossing rate and a suppression of the non-radiative decay rate of the triplet states. The positive effect of ΔEST(LE) was limited, however, as an excessive decrease in ΔEST(LE) facilitates the nonradiative deactivation of the triplet states, leading to a loss of the TADF efficiency. This paper shows that ΔEST(LE) provides a measure of TADF activation and that appropriate regulation of ΔEST(LE) is required to achieve high TADF efficiency.
We hereby report the results of our direct investigation into the excited-state dynamics of thermally activated delayed fluorescence (TADF) molecules in solution using pump-probe transient absorption spectroscopy (TAS). We found that the charge-transfer (CT) state commonly stated for TADF molecules encompasses two forms: localized and delocalized CT states. A highly efficient TADF molecule, 4CzIPN [Uoyama et al., Nature, 492, 234-238 (2012)], showed both the localized and delocalized CT states, while an inefficient TADF molecule, 2CzPN, exhibited only a localized CT state. By analyzing the time profile of triplet species observed in TAS, we propose that the reverse intersystem crossing (RISC) of 4CzIPN occurs via a mutual interaction in multiple energy levels of localized neutral and CT states, and delocalized CT states.
We demonstrate very low threshold laser oscillation (Eth= 0.78 ±0.5 μJ/cm2) from an organic semiconductor thin film employing 2,5-bis(p-(N-phenyl-N-(m-tolyl)amino) styryl)benzene (BSB-Me) as an active gain medium equipped with a second order distributed feedback resonator. Further, we demonstrate laser oscillation under optical excitation from an organic light emitting device equipped with transparent ITO hole and electron injection electrodes. In addition, we demonstrate injection and transport of high current density over J > 500 A/cm2 in an organic light emitting diode using highly thermal conductive substrates and a small electrode under short pulse voltage excitation.
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