Here, we present a vanadium carbide (V2C) mid-infrared (mid-IR) photodetector. Drop casting and spin coating a silicon substrate with a thin silicon oxide layer produced the V2C photodetector. Isopropyl alcohol and nitrogen gas drying increased material quality. E-beam lithography and metal deposition of Au/Ti contacts on V2C flakes carefully made electrical connections. Electrical bias and 2 μm laser light evaluated the V2C photodetector’s dark current and photocurrent responses. Photocurrent response changed dramatically, matching FTIR spectroscopy findings. V2C’s peak responsivity of 2.65 A/W demonstrated mid-IR photodetection. To test scalability, we created devices with 2-5 μm channels. For specialized sensing, photocurrent increases with channel length. Onchip waveguides and photonic circuits might use V2C photodetectors. V2C’s mid-IR photodetector exhibits its promise as a cutting-edge optoelectronics and integrated photonics material. This work expands mid-IR-sensing photodetector technology.
Here, we're pioneering a novel approach in photonics, targeting the development of ultra-low power communication systems and advanced sensing technologies. Central to our strategy is the implementation of a unique zig-zag structure, designed to achieve femtojoule (fJ) per bit communication efficiency. A key innovation in our approach is the integration of unidirectional coupling through on-chip isolation, seamlessly connecting a Transverse Coupled Cavity VCSEL (TCCVCSEL) to the modulator and then to a waveguide. This project has wide-ranging implications, extending beyond just creating new devices. It's geared towards establishing a robust III/V platform, serving as a cornerstone in the field of photonics and integrated circuit technology. Our work is poised to catalyze advancements in high-speed, low-power photonic systems, potentially setting new benchmarks in the industry.
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