Dr. Hitoshi Sunaoshi Profile

Dr. Hitoshi Sunaoshi

Senior Manager at NuFlare Technology Inc

SPIE Involvement:

Author

Publications (18)

Proceedings Article | 30 September 2009 Paper

Paper

Electron beam mask writer EBM-7000 for hp 32nm generation

Takashi Kamikubo, Kenji Ohtoshi, Noriaki Nakayamada, Rieko Nishimura, Hitoshi Sunaoshi, Kiminobu Akeno, Soichiro Mitsui, Yuichi Tachikawa, Hideo Inoue, Susumu Oogi, Hitoshi Higurashi, Akinori Mine, Takiji Ishimura, Seiichi Tsuchiya, Yoshitada Gomi, Hideki Matsui, Shuichi Tamamushi

Proceedings Volume 7488, 74881E (2009) https://doi.org/10.1117/12.833462

KEYWORDS: Photomasks, Data processing, Electron beams, Distributed computing, Objectives, Double patterning technology, Magnetism, Optical lithography, Overlay metrology, Lithography

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Proceedings Article | 19 May 2008 Paper

Paper

Modeling of charging effect and its correction by EB mask writer EBM-6000

Noriaki Nakayamada, Seiji Wake, Takashi Kamikubo, Hitoshi Sunaoshi, Shuichi Tamamushi

Proceedings Volume 7028, 70280C (2008) https://doi.org/10.1117/12.793020

KEYWORDS: Photomasks, Data modeling, Double patterning technology, Mirrors, Lithography, Electron beams, Mask making, Optical lithography, Electron beam lithography, Thin film coatings

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Proceedings Article | 2 May 2008 Paper

Paper

Desired IP control methodology for EUV mask in current mask process

S. Yoshitake, H. Sunaoshi, S. Tamamushi, M. Ogasawara

Proceedings Volume 6792, 67920T (2008) https://doi.org/10.1117/12.798933

KEYWORDS: Photomasks, Extreme ultraviolet, Metrology, Extreme ultraviolet lithography, Semiconducting wafers, Optical lithography, EUV optics, Lithography, Reflection, Polishing

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Proceedings Article | 2 May 2008 Paper

Paper

Key improvement schemes of accuracies in EB mask writing for double patterning lithography

Hitoshi Sunaoshi, Takashi Kamikubo, Rieko Nishimura, Kaoru Tsuruta, Takehiko Katsumata, Takayuki Ohnishi, Hirohito Anze, Jun Takamatsu, Shusuke Yoshitake, Shuichi Tamamushi

Proceedings Volume 6792, 679208 (2008) https://doi.org/10.1117/12.798521

KEYWORDS: Photomasks, Double patterning technology, Semiconducting wafers, Critical dimension metrology, Error analysis, Lithography, Diffusion, LCDs, Chromium, Line edge roughness

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Proceedings Article | 2 May 2008 Paper

Paper

Controlling linewidth roughness in step and flash imprint lithography

Gerard Schmid, Niyaz Khusnatdinov, Cynthia Brooks, Dwayne LaBrake, Ecron Thompson, Douglas Resnick, Jordan Owens, Arnie Ford, Shiho Sasaki, Nobuhito Toyama, Masaaki Kurihara, Naoya Hayashi, Hideo Kobayashi, Takashi Sato, Osamu Nagarekawa, Mark Hart, Kailash Gopalakrishnan, Rohit Shenoy, Ron Jih, Ying Zhang, Edmund Sikorski, Mary Beth Rothwell, Shusuke Yoshitake, Hitoshi Sunaoshi, Kenichi Yasui

Proceedings Volume 6792, 67920W (2008) https://doi.org/10.1117/12.798936

KEYWORDS: Line width roughness, Lithography, Critical dimension metrology, Etching, Semiconducting wafers, Line edge roughness, Chemically amplified resists, Vestigial sideband modulation, Optical lithography, Gaussian beams

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Proceedings Article | 30 October 2007 Paper

Paper

The development of full field high resolution imprint templates

Shusuke Yoshitake, Hitoshi Sunaoshi, Kenichi Yasui, Hideo Kobayashi, Takashi Sato, Osamu Nagarekawa, Ecron Thompson, Gerard Schmid, Douglas Resnick

Proceedings Volume 6730, 67300E (2007) https://doi.org/10.1117/12.747568

KEYWORDS: Photomasks, Etching, Chromium, Image processing, Lithography, Reticles, Optical proximity correction, Image resolution, Scanning electron microscopy, Silica

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Critical to the success of imprint lithography and Step and Flash Imprint Lithography (S-FIL^®) in particular is the manufacturing 1X templates. Several commercial mask shops now accept orders for 1X templates. Recently, there have been several publications addressing the fabrication of templates with 32nm and sub 32nm half pitch dimensions using high resolution Gaussian beam pattern generators. Currently, these systems are very useful for unit process development and device prototyping. In this paper, we address the progress made towards full field templates suitable for the fabrication of CMOS circuits. The starting photoplate consisted of a Cr hard mask (≤ 15nm) followed by a thin imaging layer of ZEP 520A. The EBM-5000 and the EBM-6000 variable shape beam pattern generators from NuFlare Technology were used to pattern the images on the substrates. Several key specifications of the EBM-6000, resulting in improved performance over the EBM-5000 include higher current density (70 A/cm²), astigmatism correction in the subfields, optimized variable stage speed control, and improved data handling to increase the maximum shot count limitation. To fabricate the template, the patterned resist serves as an etch mask for the thin Cr film. The Cr, in turn, is used as an etch block for the fused silica. A mesa is formed by etching the non-active areas using a wet buffered oxide etch (BOE) solution. The final step in the template process is a dice and polish step used to separate the plate into four distinct templates. Key steps in the fabrication process include the imaging and pattern processes. ZEP520A was chosen as the e-beam resist for its ability to resolve high resolution images. This paper documents the resolution and image placement capability with the processes described above. Although ZEP520A is slow relative to chemically amplified e-beam resists, it is only necessary to pattern 1/16^th the area relative to a 4X reduction mask. Write time calculations for 1X templates have also been performed, and are compared to 4X photomasks.

Proceedings Article | 30 October 2007 Paper

Paper

Coping with double-patterning/exposure lithography by EB mask writer EBM-6000

Takashi Kamikubo, Rieko Nishimura, Kaoru Tsuruta, Kiyoshi Hattori, Jun Takamatsu, Shusuke Yoshitake, Hiroshi Nozue, Hitoshi Sunaoshi, Shuichi Tamamushi

Proceedings Volume 6730, 673031 (2007) https://doi.org/10.1117/12.747745

KEYWORDS: Photomasks, Error analysis, Double patterning technology, Lithography, Chromium, Scanners, Critical dimension metrology, Semiconducting wafers, Control systems, 193nm lithography

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Proceedings Article | 30 October 2007 Paper

Paper

Correction technique of EBM-6000 prepared for EUV mask writing

Shusuke Yoshitake, Hitoshi Sunaoshi, Jun Yashima, Shuichi Tamamushi, Munehiro Ogasawara

Proceedings Volume 6730, 673030 (2007) https://doi.org/10.1117/12.747748

KEYWORDS: Photomasks, Extreme ultraviolet, Metrology, Extreme ultraviolet lithography, Error analysis, Reflectivity, Semiconducting wafers, EUV optics, Mirrors, Inspection

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Proceedings Article | 14 May 2007 Paper

Paper

Study of heating effect on CAR in electron-beam mask writing

Takashi Kamikubo, Makoto Hiramoto, Jun Yashima, Masazumi Takahashi, Rieko Nishimura, Takehiko Katsumata, Hirohito Anze, Hitoshi Sunaoshi, Shuichi Tamamushi, Munehiro Ogasawara

Proceedings Volume 6607, 660723 (2007) https://doi.org/10.1117/12.728986

KEYWORDS: Critical dimension metrology, Electron beams, Photomasks, Temperature metrology, Cadmium, Denoising, Resolution enhancement technologies, Computer simulations, Polymers, Optical lithography

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Proceedings Article | 20 May 2006 Paper

Paper

EBM-5000: electron-beam mask writer for 45 nm node

Hitoshi Sunaoshi, Yuichi Tachikawa, Hitoshi Higurashi, Tomohiro Iijima, Junichi Suzuki, Takashi Kamikubo, Kenji Ohtoshi, Hirohito Anze, Takehiko Katsumata, Noriaki Nakayamada, Shigehiro Hara, Shuichi Tamamushi, Yoji Ogawa

Proceedings Volume 6283, 628306 (2006) https://doi.org/10.1117/12.681732

KEYWORDS: Photomasks, Line edge roughness, Error analysis, Electron beams, Manufacturing, Data conversion, Electron beam melting, Optical proximity correction, Electro optical systems

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Proceedings Article | 11 March 2002 Paper

Paper

Stage tracking of a mask-scan EB mask writer test stand

Shinsuke Nishimura, Soichiro Mitsui, Munehiro Ogasawara, Kiminobu Akeno, Mitsuko Shimizu, Hideo Kusakabe, Hirotsugu Wada, Kiyoshi Hattori, Shusuke Yoshitake, Naoharu Shimomura, Jun Takamatsu, Hitoshi Sunaoshi, Yuuji Fukudome, Toru Tojo, Seiichi Tsuchiya

Proceedings Volume 4562, (2002) https://doi.org/10.1117/12.458327

KEYWORDS: Photomasks, Optical amplifiers, Vestigial sideband modulation, Amplifiers, Electron beams, Interferometers, Electro optics, Objectives, Electro optical systems, Photography

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Proceedings Article | 5 September 2001 Paper

Paper

Writing accuracy of EBM-3500 electron-beam mask writing system

Kenji Ohtoshi, Hitoshi Sunaoshi, Jun Takamatsu, Fumiyuki Okabe, K. Ishibashi, Shusuke Yoshitake, Hirokazu Yamada, Shuichi Tamamushi, Hirohito Anze, T. Kamikobo, Yoji Ogawa

Proceedings Volume 4409, (2001) https://doi.org/10.1117/12.438403

KEYWORDS: Photomasks, Optical proximity correction, Beam shaping, Electron beams, Magnetism, Vestigial sideband modulation, Electron beam lithography, Lithography, Error analysis, Scanning electron microscopy

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Proceedings Article | 22 January 2001 Paper

Paper

Eddy current evaluation for a high-resolution EB system

Naoharu Shimomura, Munehiro Ogasawara, Kiyoshi Hattori, Jun Takamatsu, Hitoshi Sunaoshi, Shusuke Yoshitake, Yuuji Fukudome, Kiminobu Akeno

Proceedings Volume 4186, (2001) https://doi.org/10.1117/12.410723

KEYWORDS: Magnetism, Chromium, Electron beams, Objectives, Information operations, Quartz, Reticles, Magnetic semiconductors, Semiconductors, Optical simulations

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Proceedings Article | 21 July 2000 Paper

Paper

Beam-monitoring system using microapertures for electron-beam lithography

Jun Takamatsu, Naoharu Shimomura, Hitoshi Sunaoshi, Kiyoshi Hattori, Munehiro Ogasawara, Tetsuro Nakasugi

Proceedings Volume 3997, (2000) https://doi.org/10.1117/12.390105

KEYWORDS: Silicon, Electrons, Sensors, Beam shaping, Photomasks, Monte Carlo methods, Lithography, Etching, Electron beams, Scanning electron microscopy

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Proceedings Article | 19 July 2000 Paper

Paper

Optical column of the mask-scan EB mask writer test stand

Naoharu Shimomura, Munehiro Ogasawara, Jun Takamatsu, Hitoshi Sunaoshi, Kiyoshi Hattori, Shusuke Yoshitake, Yuuji Fukudome, Kiminobu Akeno

Proceedings Volume 4066, (2000) https://doi.org/10.1117/12.392076

KEYWORDS: Photomasks, Electron beams, Monochromatic aberrations, Objectives, Vestigial sideband modulation, Silicon, Electrodes, Optical proximity correction, Optical design, Tungsten

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Proceedings Article | 15 November 1999 Paper

Paper

In-situ beam position monitoring system for electron-beam lithography

Hitoshi Sunaoshi, Munehiro Ogasawara, Jun Takamatsu, Naoharu Shimomura

Proceedings Volume 3777, (1999) https://doi.org/10.1117/12.370133

KEYWORDS: Microchannel plates, Sensors, CCD cameras, Electron beam lithography, Optical testing, Electron beams, Beam controllers, Image processing, CCD image sensors, Charge-coupled devices

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Proceedings Article | 1 September 1998 Paper

Paper

Development of a fast beam-blanking system

Munehiro Ogasawara, Hitoshi Sunaoshi, Ryoji Yoshikawa

Proceedings Volume 3412, (1998) https://doi.org/10.1117/12.328808

KEYWORDS: Reflectivity, Control systems, Logic, Electrodes, Beam controllers, Distortion, Electron beam lithography, Amplifiers, Signal generators, Photomasks

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Proceedings Article | 5 June 1998 Paper

Paper

Koehler-illumination-based method to improve beam size controllability

Kiyoshi Hattori, Hitoshi Sunaoshi, Atsushi Ando

Proceedings Volume 3331, (1998) https://doi.org/10.1117/12.309606

KEYWORDS: Calibration, Objectives, Lithographic illumination, Zoom lenses, Electron beam lithography, Lithography, Electron beams, Critical dimension metrology, Photoresist processing, Databases

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Showing 5 of 18 publications

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