Phase transitions are accompanied by sudden changes in physical properties of the material, which opens possibilities for a wide range of applications. Therefore, an in-depth understanding of their dynamics is crucial, especially for the novel, developing field of van der Waals materials. We present a method to spatially resolve states during the metal-insulator phase transition in tantalum disulfide. Unlike other techniques, it allows to study the influence of microscopic laser illumination on the whole, macroscopic sample. The measurements are complemented by numerical simulations.
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