Dr. Iwao Nishiyama Profile

Dr. Iwao Nishiyama

Research Manager at Semiconductor Leading Edge Technologies Inc

SPIE Involvement:

Author

Publications (59)

Proceedings Article | 29 September 2010 Paper

Evaluation of the contamination removal capability and multilayer degradation in various cleaning methods

Noriaki Takagi, Toshihisa Anazawa, Iwao Nishiyama, Osamu Suga

Proceedings Volume 7823, 782327 (2010) https://doi.org/10.1117/12.864294

KEYWORDS: Reflectivity, Contamination, Plasma, Oxygen, Silica, Ruthenium, Silicon, Carbon, Scanning probe microscopy, Oxidation

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SPIE Journal Paper | 1 April 2010

Thin-absorber extreme-ultraviolet lithography mask with light-shield border for full-field scanner: flatness and image placement change through mask process

Takashi Kamo, Yuusuke Tanaka, Toshihiko Tanaka, Iwao Nishiyama, Osamu Suga, Tsukasa Abe, Tadahiko Takikawa, Hiroshi Mohri, Tsutomu Shoki, Youichi Usui

JM3, Vol. 9, Issue 02, 023005, (April 2010) https://doi.org/10.1117/12.10.1117/1.3378154

KEYWORDS: Photomasks, Etching, Extreme ultraviolet lithography, Image processing, Multilayers, Photoresist processing, Photovoltaics, Lithography, Extreme ultraviolet, Coating

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Proceedings Article | 4 April 2008 Paper

Adamantane-based molecular glass resist for 193-nm lithography and beyond

Shinji Tanaka, Nobuaki Matsumoto, Hidetoshi Ohno, Naoyoshi Hatakeyama, Katsuki Ito, Kazuya Fukushima, Hiroaki Oizumi, Iwao Nishiyama

Proceedings Volume 6923, 69231J (2008) https://doi.org/10.1117/12.772249

KEYWORDS: Glasses, Lithography, Refractive index, Polymers, Transparency, Extreme ultraviolet lithography, Radium, Optical lithography, Immersion lithography, Sulfur

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Proceedings Article | 26 March 2008 Paper

Development of novel positive-tone resists for EUVL

Takanori Owada, Takeo Watanabe, Hiroo Kinoshita, Hiroaki Oizumi, Iwao Nishiyama

Proceedings Volume 6923, 692346 (2008) https://doi.org/10.1117/12.772404

KEYWORDS: Extreme ultraviolet lithography, Line edge roughness, Etching, Extreme ultraviolet, Glasses, Molecules, Lithography, Polymers, Optical lithography, Synchrotrons

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Proceedings Article | 21 March 2008 Paper

Surface phenomena related to degradation of EUV mirrors: interaction of ethyl alcohol with ruthenium surfaces

B. Yakshinskiy, Iwao Nishiyama, Andrea Wüest, Theodore Madey

Proceedings Volume 6921, 69213E (2008) https://doi.org/10.1117/12.774012

KEYWORDS: Bioalcohols, Ruthenium, Telescopic pixel displays, Carbon, Carbon monoxide, Extreme ultraviolet lithography, Chemistry, Mirrors, Adsorption, Extreme ultraviolet

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Proceedings Article | 20 March 2008 Paper

Selete's EUV program: progress and challenges

Ichiro Mori, Osamu Suga, Hiroyuki Tanaka, Iwao Nishiyama, Tsuneo Terasawa, Hiroyuki Shigemura, Takao Taguchi, Toshihiko Tanaka, Toshiro Itani

Proceedings Volume 6921, 692102 (2008) https://doi.org/10.1117/12.772625

KEYWORDS: Photomasks, Extreme ultraviolet lithography, Lithography, Extreme ultraviolet, Inspection, Particles, Defect inspection, Line width roughness, Contamination control, Reliability

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Selete launched a development program on EUV lithography and related mask technology in April 2006. The program is based on the concept of "lithography design and integration." It covers a wide range of areas that require further effort to get EUVL ready for volume production and was formulated on the basis that the issues should be considered from a variety of standpoints, such as acceleration of the development of key lithographic components, verification that EUVL is actually suitable for mass production, the construction of mask infrastructure, and the improvement of EUV-specific reliability and productivity. Two exposure tools have been installed as basic infrastructure: the small-field exposure tool (SFET) and the full-field exposure tool (EUV1). The objectives of the SFET installation are acceleration of the development of resist materials and processes, optimization of the mask structure and materials, and the evaluation of the exposure tool technology with regard to such things as imaging performance, stability, and the lifetimes of the optics and source components. The objective of the EUV1 installation is to demonstrate that lithography integration is a viable path to making EUV lithography a practical production technology. We found that the SFET provides both excellent resolution and high tool activity. This high performance helps us to obtain a clear understanding of the current level of EUVL performance and enables us to learn many things that can be fed back into the development program in the beta stage. A 1st static exposure with the EUV1 resolved 30-nm dense and isolated lines and 30-nm holes. The potential resolution was found to be as good as 28 nm. Although progress was made regarding EUV resist sensitivity and LWR, further progress is needed. A tool for analyzing out-gassing in EUV resists was found to facilitate the development of both resist materials and contamination control measures for exposure tools. A prototype full-field actinic inspection system for mask blanks is now under development and should become operational in the 2Q of 2008. A mask protection engineering (MPE) tool was used to show that a dual-pod carrier is very effective in protecting a mask from particles. Mask pattern defect inspection technology using a DUV wavelength of 199 nm and defect repair technology based on an FIB for EUV mask fabrication are also being developed. This work was supported in part by NEDO.

Proceedings Article | 20 March 2008 Paper

Carbon contamination of EUV mask: film characterization, impact on lithographic performance, and cleaning

Yasushi Nishiyama, Toshihisa Anazawa, Hiroaki Oizumi, Iwao Nishiyama, Osamu Suga, Kazuki Abe, Satoru Kagata, Akira Izumi

Proceedings Volume 6921, 692116 (2008) https://doi.org/10.1117/12.771978

KEYWORDS: Carbon, Reflectivity, Photomasks, Multilayers, Extreme ultraviolet, Contamination, Lithography, Tantalum, Hydrogen, X-rays

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Proceedings Article | 12 April 2007 Paper

Resist evaluation for EUV application at ASET

Doohoon Goo, Yuusuke Tanaka, Yukiko Kikuchi, Hiroaki Oizumi, Iwao Nishiyama

Proceedings Volume 6519, 65191M (2007) https://doi.org/10.1117/12.711980

KEYWORDS: Line width roughness, Polymers, Extreme ultraviolet, Extreme ultraviolet lithography, Photomasks, Semiconducting wafers, Modulation, Printing, Photoresist processing, Additive manufacturing

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Although EUV lithography has been prepared for next generation litho-technique for several years, there are still lots of obstacles on its way. Especially, phase defect from the mask, and immaturity in the resist should be solved as soon as possible because they are directly related to realizing patterns on the wafer. ASET has been focusing on these two problems, that is, the mask-related defect control and the resist screening for EUV application. In this study, we concentrate on the resist evaluation for the EUV lithography application, mainly commercial CAR (Chemically- Amplified Resist) type resist, for example, ArF resist based on polymethacrylate and KrF resist based on poly(4- hydroxystyrene) (PHS). We screened tens of resists in viewpoint of resolution, photo-speed, and LWR (Line Width Roughness). We used two METs (Micro-Exposure Tools). The one is HiNA in ASET and the other is MET in Lawrence Berkeley National Lab. (LBNL) to evaluate resist. And we used EUV masks fabricated by DNP and ASET. Some resist showed modulation on the wafer for 28nm-hp line and space pattern and some resist showed very high photo-speed about 5mJ/cm². Photo-speed could be improved about 25% by controlling the amount of additives, PAG and quencher. However, improvement in photo-speed caused degradation in resolution. This means there are trade-off relation between resolution and photo-speed. And we also evaluated polymer-bound PAG resist, which showed new possibility for EUV resist. And we encountered unexpected problem, pattern lifting, which was solved by using bufferlayer to increase attachment force between resist and wafer surface. We conclude that polymer bound PAG resist is a good approach to lower LWR of resist for EUVL application and bufferlayer tuning and matching with resist is also needed for low LWR. The EUVL masks were fabricated by Dai Nippon Printing Co., Ltd. The HiNA set-3 projection optics were developed and provided by Nikon Corporation. This work was supported by NEDO.

Proceedings Article | 12 April 2007 Paper

Distribution control of protecting groups and its effect on LER for EUV molecular resist

Daiju Shiono, Hideo Hada, Hiroto Yukawa, Hiroaki Oizumi, Iwao Nishiyama, Kyoko Kojima, Hiroshi Fukuda

Proceedings Volume 6519, 65193U (2007) https://doi.org/10.1117/12.711311

KEYWORDS: Line edge roughness, Lithography, Extreme ultraviolet lithography, Extreme ultraviolet, Inspection, Scanning electron microscopy, Analytical research, Optical lithography, Silicon films, Silicon

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Proceedings Article | 4 April 2007 Paper

An analysis of EUV-resist outgassing measurements

Kim Dean, Iwao Nishiyama, Hiroaki Oizumi, Anthony Keen, Heidi Cao, Wang Yueh, Takeo Watanabe, Paolo Lacovig, Luca Rumiz, Gregory Denbeaux, Julia Simon

Proceedings Volume 6519, 65191P (2007) https://doi.org/10.1117/12.712379

KEYWORDS: Extreme ultraviolet, Extreme ultraviolet lithography, Synchrotrons, Contamination, Mass spectrometry, Molecules, Mirrors, Analytical research, Calibration, EUV optics

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Proceedings Article | 22 March 2007 Paper

Atomic hydrogen cleaning of Ru-capped EUV multilayer mirror

Kumi Motai, Hiroaki Oizumi, Shinji Miyagaki, I. Nishiyama, Akira Izumi, Tomoya Ueno, Yasuo Miyazaki, Akira Namiki

Proceedings Volume 6517, 65170F (2007) https://doi.org/10.1117/12.711998

KEYWORDS: Hydrogen, Ruthenium, Extreme ultraviolet, Reflectivity, Oxides, Mirrors, Plasma, Extreme ultraviolet lithography, Protactinium, Oxidation

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Proceedings Article | 16 March 2007 Paper

Fidelity of rectangular patterns printed with 0.3-NA MET optics

Yuusuke Tanaka, Yukiko Kikuchi, DooHoon Goo, Iwao Nishiyama

Proceedings Volume 6517, 65172L (2007) https://doi.org/10.1117/12.711900

KEYWORDS: Diffusion, Photomasks, Extreme ultraviolet lithography, Extreme ultraviolet, Printing, EUV optics, Photoresist processing, Optical lithography, Lithography, Semiconducting wafers

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Proceedings Article | 16 March 2007 Paper

EUV exposure experiment using programmed multilayer defects for refining printability simulation

Yoshihiro Tezuka, Jerry Cullins, Yuusuke Tanaka, Takeo Hashimoto, Iwao Nishiyama, Tsutomu Shoki

Proceedings Volume 6517, 65172M (2007) https://doi.org/10.1117/12.711967

KEYWORDS: Photomasks, Extreme ultraviolet lithography, Critical dimension metrology, Computer simulations, Transmission electron microscopy, Extreme ultraviolet, Printing, Image processing, Cadmium, Photoresist processing

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Proceedings Article | 15 March 2007 Paper

Impact of interface treatment with assisted ion beam on Mo-Si multilayer formation for EUVL mask blanks

Kenji Hiruma, Yuusuke Tanaka, Shinji Miyagaki, Jerry Cullins, Iwao Nishiyama

Proceedings Volume 6517, 651720 (2007) https://doi.org/10.1117/12.711909

KEYWORDS: Extreme ultraviolet, Interfaces, Surface roughness, Reflectivity, Sputter deposition, Extreme ultraviolet lithography, Ion beams, Atomic force microscopy, Silicon, Photomasks

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Proceedings Article | 15 March 2007 Paper

EUVL mask substrate defect print study

Jerry Cullins, Yoshihiro Tezuka, Iwao Nishiyama, Takeo Hashimoto, Tsutomu Shoki

Proceedings Volume 6517, 65170E (2007) https://doi.org/10.1117/12.714358

KEYWORDS: Photomasks, Semiconducting wafers, Extreme ultraviolet lithography, Printing, Bridges, Extreme ultraviolet, Atomic force microscopy, Statistical analysis, Coating, Chromium

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Proceedings Article | 20 October 2006 Paper

Evaluation of bi-layer TaSix absorber on buffer for EUV mask

Koichiro Kanayama, Shinpei Tamura, Yasushi Nishiyama, Masashi Kawashita, Tadashi Matsuo, Akira Tamura, Susumu Nagashige, Kenji Hiruma, Doohoon Goo, Iwao Nishiyama

Proceedings Volume 6349, 63493A (2006) https://doi.org/10.1117/12.686388

KEYWORDS: Extreme ultraviolet, Gallium, Printing, Photomasks, Atomic force microscopy, Reflectivity, Silicon, Etching, Transparency, Inspection

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Proceedings Article | 20 October 2006 Paper

Current status of Mo-Si multilayer formation in ASET for low-defect-density mask blanks for EUV lithography

Kenji Hiruma, Yuusuke Tanaka, Shinji Miyagaki, Hiromasa Yamanashi, Iwao Nishiyama

Proceedings Volume 6349, 634937 (2006) https://doi.org/10.1117/12.685819

KEYWORDS: Silicon, Molybdenum, Sputter deposition, Ion beams, Interfaces, Particles, Reflectivity, Extreme ultraviolet, Photomasks, Extreme ultraviolet lithography

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Proceedings Article | 20 May 2006 Paper

Mask pattern correction to compensate for the effect of off-axis incidence in EUV lithography

Minoru Sugawara, Iwao Nishiyama

Proceedings Volume 6283, 62830L (2006) https://doi.org/10.1117/12.681845

KEYWORDS: Photomasks, Tantalum, Semiconducting wafers, Optical proximity correction, Cadmium, Extreme ultraviolet lithography, Wafer-level optics, Reflectivity, Reflection, Light

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Proceedings Article | 20 May 2006 Paper

EUV mask development status at ASET and DNP

Tsukasa Abe, Akiko Fujii, Hiroshi Mohri, Naoya Hayashi, Yuusuke Tanaka, Iwao Nishiyama

Proceedings Volume 6283, 62830H (2006) https://doi.org/10.1117/12.681840

KEYWORDS: Semiconducting wafers, Etching, Extreme ultraviolet, Dry etching, Photomasks, Reflectivity, Chromium, Scanning electron microscopy, Wafer testing, Tantalum

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Proceedings Article | 24 March 2006 Paper

Sub-32nm patterning using EUVL at ASET

Doohoon Goo, Yuusuke Tanaka, Yukiko Kikuchi, Hiroaki Oizumi, Iwao Nishiyama

Proceedings Volume 6151, 61512R (2006) https://doi.org/10.1117/12.656124

KEYWORDS: Extreme ultraviolet lithography, Line width roughness, Photomasks, Extreme ultraviolet, Lithography, Immersion lithography, Semiconducting wafers, Resolution enhancement technologies, Optical lithography, Nanoimprint lithography

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Proceedings Article | 24 March 2006 Paper

Ultimate fine-pitch resist patterning using the ASET-HINA

H. Oizumi, Y. Tanaka, F. Kumasaka, I. Nishiyama

Proceedings Volume 6151, 61512Q (2006) https://doi.org/10.1117/12.656050

KEYWORDS: Polymers, Extreme ultraviolet lithography, Optical lithography, Lithography, Extreme ultraviolet, Projection systems, Photomasks, Electron beam lithography, Polymer thin films, Semiconducting wafers

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Proceedings Article | 24 March 2006 Paper

Printability of contact-hole patterns in EUVL using 0.3-NA HiNA optics

Yuusuke Tanaka, Hiroaki Oizumi, Yukiko Kikuchi, DooHoon Goo, Fumiaki Kumasaka, Iwao Nishiyama

Proceedings Volume 6151, 61512S (2006) https://doi.org/10.1117/12.656126

KEYWORDS: Photomasks, Extreme ultraviolet lithography, Optical lithography, Lithography, Extreme ultraviolet, Binary data, Optical proximity correction, Projection systems, Printing, Mirrors

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Proceedings Article | 23 March 2006 Paper

Model of Ru surface oxidation for the lifetime scaling of EUVL projection optics mirror

Iwao Nishiyama

Proceedings Volume 6151, 61510G (2006) https://doi.org/10.1117/12.655499

KEYWORDS: Ruthenium, Extreme ultraviolet, Molecules, Oxygen, Light sources, Extreme ultraviolet lithography, Mirrors, Synchrotron radiation, Projection systems, Oxidation

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Proceedings Article | 23 March 2006 Paper

Simulation analysis of printability of scratch and bump defects in EUV lithography

Minoru Sugawara, Iwao Nishiyama

Proceedings Volume 6151, 61510W (2006) https://doi.org/10.1117/12.657640

KEYWORDS: Critical dimension metrology, Semiconducting wafers, Photomasks, Image quality, Diffraction, Extreme ultraviolet lithography, Multilayers, Glasses, Tantalum, Particles

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Proceedings Article | 23 March 2006 Paper

Impact of multi-layer deposition method on defects for EUVL photomask blanks

Jerry Cullins, Kumi Motai, Iwao Nisiyama

Proceedings Volume 6151, 61511X (2006) https://doi.org/10.1117/12.656931

KEYWORDS: Photomasks, Ion beams, Sputter deposition, Transmission electron microscopy, Deposition processes, Atomic force microscopy, Ions, Extreme ultraviolet lithography, Etching, Manufacturing

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Proceedings Article | 23 March 2006 Paper

High-precision (<1ppb/°C) optical heterodyne interferometric dilatometer for determining absolute CTE of EUVL materials

Yoshimasa Takeichi, Iwao Nishiyama, Naofumi Yamada

Proceedings Volume 6151, 61511Z (2006) https://doi.org/10.1117/12.656368

KEYWORDS: Extreme ultraviolet lithography, Glasses, Silica, Temperature metrology, Heterodyning, Interferometry, Interferometers, Metrology, Beam splitters, Prototyping

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Proceedings Article | 23 March 2006 Paper

Performance and quality analysis of Mo-Si multilayers deposited by ion beam sputtering and magnetron sputtering

Kenji Hiruma, Shinji Miyagaki, Hiromasa Yamanashi, Yuusuke Tanaka, Jerry Cullins, Iwao Nishiyama

Proceedings Volume 6151, 61511V (2006) https://doi.org/10.1117/12.655563

KEYWORDS: Sputter deposition, Silicon, Molybdenum, Extreme ultraviolet, Interfaces, Ion beams, Reflectivity, Chemical species, Transmission electron microscopy, Argon

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Proceedings Article | 22 March 2006 Paper

Evaluation of resolution and LER in the resist patterns replicated by EUV microexposure tools

Yukiko Kikuchi, Yuusuke Tanaka, Hiroaki Oizumi, Fumiaki Kumasaka, DooHoon Goo, Iwao Nishiyama

Proceedings Volume 6151, 615107 (2006) https://doi.org/10.1117/12.655106

KEYWORDS: Line edge roughness, Extreme ultraviolet, Mirrors, Extreme ultraviolet lithography, Photomasks, Optics manufacturing, Reflectivity, Semiconducting wafers, Manufacturing, Imaging systems

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Proceedings Article | 8 November 2005 Paper

Impact of slanted absorber side wall on printability in EUV lithography

Minoru Sugawara, Iwao Nishiyama

Proceedings Volume 5992, 59923V (2005) https://doi.org/10.1117/12.632419

KEYWORDS: Photomasks, Semiconducting wafers, Cadmium, Absorption, Critical dimension metrology, Extreme ultraviolet lithography, Reflectivity, Reflection, Diffraction, Tantalum

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Proceedings Article | 28 June 2005 Paper

Investigation of defect repair methods for EUVL mask blanks through aerial-image simulations

Takeo Hashimoto, Iwao Nishiyama

Proceedings Volume 5853, (2005) https://doi.org/10.1117/12.617268

KEYWORDS: Photomasks, Extreme ultraviolet lithography, Inspection, Semiconducting wafers, Reflectivity, Finite-difference time-domain method, Chromium, Silicon, Extreme ultraviolet, Molybdenum

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Proceedings Article | 28 June 2005 Paper

Evaluation of defect repair of EUV mask absorber layer

Tsukasa Abe, Tsuyoshi Amano, Hiroshi Mohri, Naoya Hayashi, Yuusuke Tanaka, Fumiaki Kumasaka, Iwao Nishiyama

Proceedings Volume 5853, (2005) https://doi.org/10.1117/12.617273

KEYWORDS: Semiconducting wafers, Photomasks, Etching, Extreme ultraviolet, Reflectivity, Atomic force microscopy, Chromium, Scanning electron microscopy, Extreme ultraviolet lithography, Dry etching

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